Thomas L Keyser from 510 Parkside Dr, Aiken, SC 29803, age 76, Phone: 8039794810

Resumes

Thomas Keyser

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Location:

Augusta, Georgia Area

Industry:

Consumer Goods

Work:

Aiken Technical College 2007 - 2009
Account Manager / Program Manager
WMC Mortgage 2003 - 2007
Account Executive
Premier Construction & Restoration, Premier Electric, Steven M. Hullman Construction 2000 - 2003
General Manager
Business & Employee First 1994 - 2000
Vice President - National Sales and Marketing Manager
L. J. Elkin 1989 - 1994
Region Sales Manager

Education:

Western Michigan University
BS, Food Distribution / Business Administration

Skills:

Consumer Package Goods Operations Management Broker Management Trainer Business to Business Business to Consumer Business Development Consultative / Executive Level Sales Direct Sales Field Sales Management Forecasting Fulfillment Negotiations Inventory Management Revenue Growth Relationship Building Project Management Solutions Selling Strategic Planning Supply Chain Management Team Building Technical Sales Human Performance Improvement

Region Supervisor

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Location:

Aiken, SC

Industry:

Consumer Goods

Work:

Advantage Sales & Marketing
Region Supervisor

Skills:

Oracle Database
Supervisor

Thomas Keyser

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Thomas Keyser

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Thomas Keyser

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Location:

United States

Thomas Keyser

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Location:

United States

Us Patents

System And Method For Uniform Multi-Plane Silicon Oxide Layer Formation For Optical Applications
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US Patent:

7442589, Oct 28, 2008
Filed:

Jan 17, 2006
Appl. No.:

11/306952
Inventors:

Lianzhong Yu - Redmond WA, US
Ken L. Yang - Bellevue WA, US
Thomas Keyser - Plymouth MN, US
Assignee:

Honeywell International Inc. - Morristown NJ
International Classification:

H01L 21/337
US Classification:

438150, 438168, 438187, 438424, 257E33003, 257E3104, 257E29003, 257E21121, 257E21123
Abstract:

Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a faster oxide growth rate. The oxide is removed from the first facet and a second oxide layer is grown on the first and second facets. Removing the oxide from the first facet includes shielding the second facet and exposing the substrate to a deoxidizing condition. The second facet is then exposed to receive the second oxide layer. Areas having differing oxide thicknesses are also grown by repeatedly growing oxide layers, selectively shielding areas, and removing oxide from exposed areas.