Thomas R Keyser

Address:

13 King George Rd, Greenville, SC 29615

VIN:

1G2AL15F077244056

Make:

PONT

Model:

G5

Year:

2007

US Patent:

6743662, Jun 1, 2004

Filed:

Jul 1, 2002

Appl. No.:

10/186494

Inventors:

Mohammed A. Fathimulla - Ellicott City MD
Thomas Keyser - Plymouth MN

Assignee:

Honeywell International, Inc. - Morristown NJ

International Classification:

H01L 2144

US Classification:

438118, 438406, 438455, 438458, 438459, 148DIG 12, 257593, 257676, 257701

Abstract:

An RF semiconductor device is fabricated from a starting substrate comprising a polysilicon handle wafer, a buried oxide layer over the polysilicon handle wafer, and a silicon layer over the oxide layer.

US Patent:

6888219, May 3, 2005

Filed:

Aug 29, 2002

Appl. No.:

10/230680

Inventors:

Thomas R. Keyser - Plymouth MN, US

Assignee:

Honeywell International, Inc. - Morristown NJ

International Classification:

H01L027/108
H01L029/04
H01L029/76
H01L031/36
H01L031/112
H01L029/94
H01L031/119

US Classification:

257532, 257296, 257533, 257536, 257 68

Abstract:

A semiconductor device has a silicon layer and a first dielectric layer. A transistor has a drain and a source that are at least partially in the silicon layer. The transistor further has a gate and a spacer defining the gate. The first dielectric layer forms the spacer. A capacitor has first and second electrodes, the first electrode is formed at least partially in the silicon layer, and the first dielectric layer provides a dielectric for the capacitor between the first and second electrodes. A resistor has a resistive region formed at least partially in the silicon layer and has first and second resistor contact areas defined by the first dielectric layer. A second dielectric layer electrically isolates the transistor, the capacitor, and the resistor from conductive lines.

US Patent:

7149388, Dec 12, 2006

Filed:

Aug 10, 2004

Appl. No.:

10/915607

Inventors:

Thomas Keyser - Plymouth MN, US
Cheisan J. Yue - Roseville MN, US

Assignee:

Honeywell International, Inc. - Morristown NJ

International Classification:

G02B 6/42
G02F 1/295

US Classification:

385 40, 385 8

Abstract:

The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. In one aspect of the invention an electrical contact structure is provided. The electrical contact structure comprises a connecting portion that electrically connects an active region of at least one of the silicon layers to a contact portion of the electrical contact structure.

US Patent:

7177489, Feb 13, 2007

Filed:

Aug 10, 2004

Appl. No.:

10/915299

Inventors:

Thomas Keyser - Plymouth MN, US
Cheisan J. Yue - Roseville MN, US
Bradley J. Larsen - Mound MN, US

Assignee:

Honeywell International, Inc. - Morristown NJ

International Classification:

G02B 1/01
G02B 6/10
H01L 21/302

US Classification:

385 1, 385129, 438719

Abstract:

The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In one aspect of the invention a high mobility silicon layer can be provided by crystallizing an amorphous silicon layer. In another aspect of the invention, a high mobility silicon layer can be provided by using selective epitaxial growth and extended lateral overgrowth thereof.

US Patent:

7217584, May 15, 2007

Filed:

Aug 10, 2004

Appl. No.:

10/915081

Inventors:

Cheisan J. Yue - Roseville MN, US
Thomas Keyser - Plymouth MN, US

Assignee:

Honeywell International Inc. - Morristown NJ

International Classification:

H01L 21/00

US Classification:

438 31, 438106, 438455

Abstract:

The present invention provides silicon based thin-film structures that can be used to form high frequency optical modulators. Devices of the invention are formed as layered structures that have a thin-film dielectric layer, such as silicon dioxide, sandwiched between silicon layers. The silicon layers have high free carrier mobility. In one aspect of the invention a single crystal silicon material is bonded to a thin-film dielectric material to form a silicon-insulator-silicon thin-film structure for an optical modulator.

US Patent:

7442589, Oct 28, 2008

Filed:

Jan 17, 2006

Appl. No.:

11/306952

Inventors:

Lianzhong Yu - Redmond WA, US
Ken L. Yang - Bellevue WA, US
Thomas Keyser - Plymouth MN, US

Assignee:

Honeywell International Inc. - Morristown NJ

International Classification:

H01L 21/337

US Classification:

438150, 438168, 438187, 438424, 257E33003, 257E3104, 257E29003, 257E21121, 257E21123

Abstract:

Methods and systems for growing uniform oxide layers include an example method including growing a first layer of oxide on first and second facets of the substrate, with the first facet having a faster oxide growth rate. The oxide is removed from the first facet and a second oxide layer is grown on the first and second facets. Removing the oxide from the first facet includes shielding the second facet and exposing the substrate to a deoxidizing condition. The second facet is then exposed to receive the second oxide layer. Areas having differing oxide thicknesses are also grown by repeatedly growing oxide layers, selectively shielding areas, and removing oxide from exposed areas.

US Patent:

7454102, Nov 18, 2008

Filed:

Apr 26, 2006

Appl. No.:

11/412738

Inventors:

Thomas Keyser - Plymouth MN, US
Grenville Hughes - Wayzata MN, US

Assignee:

Honeywell International Inc. - Morristown NJ

International Classification:

G02B 6/34
G02B 6/10

US Classification:

385 36, 385 14, 385 15, 385 31, 385 39, 385 49, 385129, 385130, 385131

Abstract:

An optoelectronic coupling structure, a method of manufacture, and a method of operation are described. The optical coupling structure includes a waveguide that is formed within a device layer of an SOI substrate. A prism is located on a bottom side of the SOI substrate. A BOX layer of the SOI substrate, which is interposed between the prism and the waveguide, serves as a spacer region, which promotes an optical coupling of the prism to the waveguide. By positioning the prism below the waveguide, an optoelectronic IC may more readily accommodate a prism. The prism may be directly fabricated in a bulk layer of the SOI substrate or directly bonded to a bottom side surface of the BOX layer.

US Patent:

7535576, May 19, 2009

Filed:

May 15, 2006

Appl. No.:

11/433965

Inventors:

Thomas Keyser - Plymouth MN, US
Glen A. Sanders - Scottsdale AZ, US
Grenville Hughes - Wayzata MN, US
Lee K. Strandjord - Tonka Bay MN, US

Assignee:

Honeywell International, Inc. - Morristown NJ

International Classification:

G01C 19/72
G01C 19/66
G02B 6/00

US Classification:

356461, 356469, 356470, 385 12

Abstract:

Methods and apparatus are provided for a low cost optical gyro using thin film waveguides to direct light beams among the components of the gyro. The gyro includes a substrate having an insulator layer, a silicon waveguide formed on the insulator layer, and a resonator coupled to the silicon waveguide and configured to circulate a portion of a first light beam in a first counter-propagating direction and circulate a portion of a second light beam in a second counter-propagating direction. The first silicon waveguide propagates the first and second light beams therethrough. Each of the first and second light beams has a resonance frequency when circulating in the resonator.