Thomas S Magee

US Patent:

39720322, Jul 27, 1976

Filed:

Sep 9, 1974

Appl. No.:

5/504058

Inventors:

Thomas J. Magee - Belmont CA
Matt Lehmann - Menlo Park CA

Assignee:

Stanford Research Institute - Menlo Park CA

International Classification:

G11C 1142
G11C 1304

US Classification:

340173CC

Abstract:

There is provided a method and means for establishing storage sites in photodichroic materials using ion implantation.

US Patent:

41475640, Apr 3, 1979

Filed:

Nov 18, 1977

Appl. No.:

5/852786

Inventors:

Thomas J. Magee - Belmont CA
Richard R. Pettijohn - Portola Valley CA
Shelley A. Stewart - Santa Clara CA
Malcolm Thackray - Stanford CA

Assignee:

SRI International - Menlo Park CA

International Classification:

H01L 21306

US Classification:

148 15

Abstract:

A method of forming a microscopically texturized surface on a crystalline semiconductor material is disclosed which method includes the use of a radioactive source for uniformly irradiating the surface. The radioactive source includes a plane surface having a uniform distribution of radioactive material thereon In one arrangement the radioactive source surface area is at least the size of the polished crystalline semiconductor surface to be texturized, and the radioactive source is positioned closely adjacent the polished surface for a predetermined time period for uniform irradiation of the same. If desired, the radioactive source and crystalline surface may be relatively movable during irradiation of the surface, in which case the source may be in the form of an elongated strip of sufficient length to extend beyond opposite edges of the polished surface area to be texturized. In any case, the large-surface area radioactive source produces substantially uniform distribution of damage tracks in the crystalline surface, which surface then is anisotropically etched by use of a suitable etching solution. The damage tracks provide etching sites along which etching proceeds at a greater rate than in the undamaged area.

US Patent:

47585331, Jul 19, 1988

Filed:

Sep 22, 1987

Appl. No.:

7/099792

Inventors:

Thomas J. Magee - Belmont CA
John F. Osborne - Sunnyvale CA
Peter Gildea - Sunnyvale CA
Charles H. Leung - San Jose CA

Assignee:

XMR Inc. - Santa Clara CA

International Classification:

H01L 21268

US Classification:

437173

Abstract:

Nonrefractory micrometer-thick deposited metal or metallization, for example, aluminum and aluminum alloy films, on integrated circuits are planarized by momentarily melting them with optical pulses from a laser, such as a xenon chloride excimer laser. The substrate, as well as any intervening dielectric and conducive layers, are preheated to preferably one-half the melting temperature of the metal to be planarized, thereby enhancing reflow of the metal upon melting. This improves planarization and reduces stress in the resolidified metal. Laser planarization offers an attractive technique for fabricating multilayer interconnect structures, particularly where a number of ground or power planes are included. Excellent step coverage and via filling is achieved without damaging lower layers of interconnect.

US Patent:

51511355, Sep 29, 1992

Filed:

Sep 15, 1989

Appl. No.:

7/407817

Inventors:

Thomas J. Magee - Belmont CA
Charles S. Leung - San Jose CA
Richard L. Press - San Jose CA

Assignee:

Amoco Corporation - Chicago IL

International Classification:

H01L 21268
B08B 700

US Classification:

134 1

Abstract:

The invention relates to a new method for cleaning chemical, metallic and particulate contaminants from solid surfaces. The new method comprises irradiating the surface with essentially ultraviolet laser radiation whose parameters are selected to avoid causing substantial chemical or physical change at the surface.