Thomas J Magee

US Patent:

6816564, Nov 9, 2004

Filed:

Oct 21, 2003

Appl. No.:

10/415809

Inventors:

Thomas J. Beck - Baltimore MD
Howard S. Feldmesser - Columbia MD
Thomas C. Magee - Sykesville MD

Assignee:

The Johns Hopkins University - Baltimore MD

International Classification:

A61B 603

US Classification:

378 5, 378 18, 378901

Abstract:

Techniques for deriving bone properties from images generated by a dual-energy x-ray absorptiometry apparatus include receiving first image data having pixels indicating bone mineral density projected at a first angle of a plurality of projection angles. Second image data and third image data are also received. The second image data indicates bone mineral density projected at a different second angle. The third image data indicates bone mineral density projected at a third angle. The third angle is different from the first angle and the second angle. Principal moments of inertia for a bone in the subject are computed based on the first image data, the second image data and the third image data. The techniques allow high-precision, high-resolution dual-energy x-ray attenuation images to be used for computing principal moments of inertia and strength moduli of individual bones, plus risk of injury and changes in risk of injury to a patient.

US Patent:

7203274, Apr 10, 2007

Filed:

Aug 14, 2003

Appl. No.:

10/399617

Inventors:

Thomas J. Beck - Baltimore MD, US
Howard S. Feldmesser - Columbia MD, US
Thomas C. Magee - Sykesville MD, US

Assignee:

The Johns Hopkins University - Baltimore MD

International Classification:

G01N 23/06

US Classification:

378 54, 378 62

Abstract:

Methods and apparatuses for advanced, multiple-projection, dual-energy X-ray absorptiometry scanning systems include combinations of a conical collimator; a high-resolution two-dimensional detector; a portable, power-capped, variable-exposure-time power supply; an exposure-time control element; calibration monitoring; a three-dimensional anti-scatter-grid; and a gantry-gantry base assembly that permits up to seven projection angles for overlapping beams. Such systems are capable of high precision bone structure measurements that can support three dimensional bone modeling and derivations of bone strength, risk of injury, and efficacy of countermeasures among other properties.

US Patent:

20020187595, Dec 12, 2002

Filed:

Oct 30, 2001

Appl. No.:

10/000838

Inventors:

Hans Walitzki - Portland OR, US
Kurt Dichmann - Banks OR, US
Thomas Magee - Lake Oswego OR, US
Claudian Nicolesco - Portland OR, US

Assignee:

Silicon Evolution, Inc. - Vancouver WA

International Classification:

H01L021/338

US Classification:

438/184000

Abstract:

A method for the production of silicon-on-insulator (SOI) wafers for controlling the device layer thickness variations and improvement of bonding quality at the interface of the wafers is disclosed. Using standard etched wafers, a unique sequence of process steps consisting of 2-step front side grinding, free-floating simultaneous double side polishing prepares wafers with low TTV and reduced edge roll off zones. The much smaller unbonded edge zone eliminates the requirements for edge grinding or etching in most cases. When the same s-step grinding/FFS-DSP sequence is applied after bonding and annealing of a Silicon-on-Insulator package, the resulting thickness variation in the device layer is usually smaller than what would be obtained from prior art processes.

US Patent:

20030060020, Mar 27, 2003

Filed:

Oct 11, 2001

Appl. No.:

09/976452

Inventors:

Hans Walitzki - Portland OR, US
Claudian Nicolesco - Portland OR, US
Thomas Magee - Lake Oswego OR, US
Howard Hogle - Portland OR, US

Assignee:

Silicon Evolution, Inc. - Vancouver WA

International Classification:

H01L021/30
H01L021/46
H01L021/302
H01L021/461

US Classification:

438/455000, 438/692000, 438/693000

Abstract:

The present invention relates to the manufacture of substrates for semiconductor device manufacturing particularly for applications that involved wafer-to-wafer bonding for SOI or MEMS structures. Although previous techniques have been applicable to single crystal wafers using bonding and annealing, the current techniques offer the unique capability of utilizing lower cost semiconductor materials, even when they contain dislocations or other growth associated stress fields; such as poly or multi-crystalline silicon and seed, or tail ends of CZ or FZ grown ingots. This invention provides a means of obtaining superior global and local flatness, along with nanoscale roughness variations across the surfaces so that cost and throughput are optimized.