Thomas Frederick Mcgill

age ~68

from Tuscaloosa, AL

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Also known as:

Thomas F Mcgill
Tom F Mcgill
Thomasf Mcgill

Connected to:

Thomas Mcgill Phones & Addresses

Tuscaloosa, AL
10270 Foothill Blvd, Cupertino, CA 95014
Fort Apache, AZ
San Jose, CA
Germantown, WI
San Mateo, CA
Rancho Cordova, CA
El Dorado Hills, CA
Menomonee Falls, WI

Resumes

Thomas Mcgill

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Location:

United States

Thomas Mcgill

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Location:

United States

Lawyers & Attorneys

Thomas Mcgill - Lawyer

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ISLN:

911475782

Admitted:

1991

License Records

Thomas Michael Mcgill

License #:

ERS14439 - Active

Category:

Emergency Medical Services

Issued Date:

Feb 9, 2011

Expiration Date:

Dec 31, 2018

Type:

ERS - Endotracheal Intubation

Thomas Michael Mcgill

License #:

EMT14439 - Active

Category:

Emergency Medical Services

Issued Date:

Dec 7, 2010

Expiration Date:

Dec 31, 2018

Type:

EMT - Cardiac

Isbn (Books And Publications)

Readings in Animal Behavior

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Author
Thomas E. McGill

ISBN #
0030899265

Name / Title

Company / Classification

Phones & Addresses

Thomas McGill
Owner

Sol Irlandes Mexican Grill
Restaurants

2301 Performance Dr, Ste 100, Richardson, TX 75082
9726722062

Thomas J. Mcgill

NUNUR, LLC

Thomas J. Mcgill

THE CROSSINGS AT INDIAN SPRINGS, LLC

Thomas J. Mcgill

TOWNE CENTRE SQUARE PARTNERS, LLC

Thomas Mcgill

SPINNINGWHEEL PARTNERS, LLC

Thomas J. Mcgill

MCGILL, KELLY AND ASSOCIATES, LLC

Thomas J Mcgill

6025 MONT, LLC

Thomas J Mcgill

TRU-GREEN PROPERTIES, LLC

Us Patents

Multiple Stage High Power Diode
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US Patent:

6610999, Aug 26, 2003
Filed:

May 8, 2001
Appl. No.:

09/851692
Inventors:

Zvonimir Z. Bandic - San Jose CA
Eric C. Piquette - Newbury Park CA
Thomas C. McGill - Pasadena CA
Assignee:

California Institute of Technology - Pasadena CA
International Classification:

H01L 310256
US Classification:

257 76, 257471, 257472, 257473, 257485, 438570, 438571, 438572, 438573
Abstract:

A Schottky rectifier has multiple stages with substantially identical or very similar structures. Each stage includes a nitride-based semiconductor layer, a Schottky contact formed on one surface of the semiconductor layer, and an ohmic contact formed on an opposite surface of the semiconductor layer. The Schottky layer is formed from a metallic material with a high metal work function, and the ohmic contact is formed from a metallic material with a low metal work function. At least one of the stages is a middle stage located between two adjacent stages, such that the Schottky contact of the middle stage and the ohmic contact of one of the adjacent stages are joined together, and such that the ohmic contact of the middle stage and the Schottky contact of another one of the adjacent stages are joined together.