Thomas E Neal

US Patent:

6391744, May 21, 2002

Filed:

Mar 19, 1997

Appl. No.:

08/820200

Inventors:

John J. Hudak - Columbia MD
Thomas R. Neal - Catonsville MD
Pramod Chintaman Karulkar - Ellicott City MD

Assignee:

The United States of America as represented by the National Security Agency - Washington DC

International Classification:

H01L 2146

US Classification:

438459, 438149

Abstract:

A method of thinning a non-SOI device using an SOI thinning process that includes the steps of receiving an SOI starting wafer, where the SOI starting wafer includes a silicon substrate and an oxide layer thereon; selecting a non-SOI fabrication process for fabricating the non-SOI device; forming a layer of device quality silicon on the oxide layer of the SOI starting wafer to a sufficient thickness and doping profile to realize the non-SOI device; fabricating the non-SOI device in the device quality silicon layer using the non-SOI fabrication process selected; forming a support layer on the device quality silicon layer having the non-SOI device fabricated therein; and thinning the result of the last step using the SOI thinning process.

Address:

12025 NW 78 Pl, Parkland, FL 33076

VIN:

1FMCU0E74AKA53468

Make:

FORD

Model:

ESCAPE

Year:

2010