Thomas M Parrill

US Patent:

6828572, Dec 7, 2004

Filed:

Apr 1, 2003

Appl. No.:

10/404493

Inventors:

Ronald N. Reece - Westwood MA
Michael A. Graf - Cambridge MA
Thomas Parrill - North Andover MA
Brian S. Freer - Medford MA

Assignee:

Axcelis Technologies, Inc. - Beverly MA

International Classification:

G01N 2100

US Classification:

25049221, 2504911, 2504921, 2504923

Abstract:

The present invention facilitates semiconductor device fabrication by monitoring and correcting angular errors during ion implantation procedures via an incident ion beam angle detector. Additionally, the present invention facilitates semiconductor device fabrication by calibrating a process disk with respect to an incident ion beam without measuring implantation results on wafers prior to an ion implantation process.

US Patent:

7687786, Mar 30, 2010

Filed:

May 16, 2008

Appl. No.:

12/122108

Inventors:

Thomas Parrill - Andover MA, US
Aditya Agarwal - Sunnyvale CA, US

Assignee:

Twin Creeks Technologies, Inc. - San Jose CA

International Classification:

H01J 37/30

US Classification:

25049221

Abstract:

Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.

US Patent:

7750322, Jul 6, 2010

Filed:

Apr 3, 2009

Appl. No.:

12/418237

Inventors:

Thomas Parrill - Andover MA, US
Aditya Agarwal - Sunnyvale CA, US

Assignee:

Twin Creeks Technologies, Inc. - San Jose CA

International Classification:

H01J 37/317
H01J 37/30
H01L 21/265

US Classification:

25049221, 2504922, 250423 R, 250281, 250282, 250396 R, 700121, 438795

Abstract:

Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.

US Patent:

7897945, Mar 1, 2011

Filed:

Sep 25, 2008

Appl. No.:

12/237963

Inventors:

Thomas Parrill - Andover MA, US
Victor Benveniste - Lyle WA, US

Assignee:

Twin Creeks Technologies, Inc. - San Jose CA

International Classification:

H01J 37/30

US Classification:

25049221

Abstract:

Ion implanters incorporating multibeam ion sources are used to meet process dose and energy demands associated with fabricating a thin lamina for use in photovoltaic devices. The thin lamina are formed by ion implantation followed by cleaving.

US Patent:

8242468, Aug 14, 2012

Filed:

Jun 28, 2010

Appl. No.:

12/824426

Inventors:

Thomas Parrill - Andover MA, US
Aditya Agarwal - Sunnyvale CA, US

Assignee:

Twin Creeks Technologies, Inc. - San Jose CA

International Classification:

H01J 37/317
H01J 37/30

US Classification:

25049221, 2504922, 250423 R, 250281, 250282, 250396 R, 700121

Abstract:

Ion implanters are especially suited to meet process dose and energy demands associated with fabricating photovoltaic devices by ion implantation followed by cleaving.

US Patent:

20080083609, Apr 10, 2008

Filed:

Oct 4, 2007

Appl. No.:

11/867342

Inventors:

Jack Jerome Schuss - Newton MA, US
John Thomas Summerson - Reading MA, US
William M. Holber - Winchester MA, US
Thomas M. Parrill - Andover MA, US

Assignee:

MKS Instruments, Inc. - Wilmington MA

International Classification:

H05H 1/24

US Classification:

204164

Abstract:

Methods and apparatus for operating plasmas are described. The vessel receives an oxygen containing plasma to clean and/or condition the vessel. Some embodiments of the invention feature methods and apparatus for improving ignition properties of the plasmas.

US Patent:

62287419, May 8, 2001

Filed:

Jan 11, 1999

Appl. No.:

9/228583

Inventors:

Shawn T. Walsh - Richardson TX
John E. Campbell - Plano TX
James B. Friedmann - Dallas TX
Thomas M. Parrill - North Andover MA
Joshua J. Robbins - Dallas TX
Byron T. Ahlburn - Plano TX
Sue Ellen Crank - Coppell TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 2176

US Classification:

438400

Abstract:

A method is given for removing excess oxide from active areas after shallow trench isolation, without the use of chemical-mechanical polishing. A nitride mask protects active areas during the etch of isolation trenches. The trenches are filled with oxide, using high density plasma deposition, which simultaneously etches, providing a sloping contour around the isolation trenches. A further layer of nitride is used to provide a cap over the trench which seals to the underlying layer of nitride. The cap layer of nitride receives a patterned etch to remove the cap only over the active areas. This allows a selective etch to remove the excess oxide, which can be followed by a selective etch to remove the nitride layers.

US Patent:

62879839, Sep 11, 2001

Filed:

Dec 18, 1998

Appl. No.:

9/213143

Inventors:

Thomas M. Parrill - North Andover MA
Brian K. Kirkpatrick - Allen TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21302
H01L 21461

US Classification:

438745

Abstract:

A nitride wet etch in which liquid TEOS is flowed directly into the hot phosphoric acid bath before wafer etching begins. This preloads the bath chemistry with silicate ions, and thus helps assure very high selectivity to silicon oxides.