Thomas L Roth

US Patent:

6365442, Apr 2, 2002

Filed:

Oct 4, 2000

Appl. No.:

09/679582

Inventors:

Dean Tran - Westminister CA
John Joseph Berenz - San Pedro CA
Luis M. Rochin - Temecula CA
Thomas J. Roth - Redondo Beach CA
Ronald A. DePace - Mission Viejo CA

Assignee:

TRW Inc. - Lyndhurst OH

International Classification:

H01L 2182

US Classification:

438128, 438133

Abstract:

A method of making a micro-miniature switch device ( ), which has at least one member ( ) movable relative to a substrate ( ) upon which the device is provided, includes providing a layer of sacrificial non-photolithography material upon a stratum connected to the substrate. A template is provided via photolithographing step that uses a photoresist material upon a stratum connected to the substrate. A layer is provided to include at least a portion of the movable member. The photoresist material and the sacrificial non-photolithography material are removed using photoresist developer. Preferably, at least two photolithography process steps utilize a single photolithographic mask. Also preferably, substrate material is removed to create a recess and at least one channel into the substrate, wherein the channel intersects the recess. At least a portion of the movable member is provided at a location within the recess and at least a portion of the movable member is provided at a location within the channel.

US Patent:

50383566, Aug 6, 1991

Filed:

Dec 4, 1989

Appl. No.:

7/445223

Inventors:

Dan Botez - Redondo Beach CA
Luke J. Mawst - Torrance CA
Thomas J. Roth - Redondo Beach CA
Lawrence M. Zinkiewicz - Redondo Beach CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

H01S 319

US Classification:

372 45

Abstract:

A semiconductor diode laser device, and a related method for its fabrication, the laser being of the type from which light is emitted in a direction perpendicular to planar layers forming the device. The laser includes an active layer and cladding layers formed on a supporting substrate, and a highly reflective semiconductor stack reflector formed on one of the cladding layers. The semiconductor stack reflector may be placed in contact with a heat sink and performs the multiple functions of electrical current conduction, heat removal and light reflection. A current confinement layer is formed laterally surrounding the semiconductor stack reflector, to provide one element of a back-biased junction that confines the current to the reflector region. A dielectric stack reflector is formed in a well in the substrate, and provides for light emission from the device. Operation of the device at high powers and efficiencies, even in continous-wave (CW) mode, is made possible by positioning the active layer in close proximity to the heat sink, and by the effectiveness of the current confinement layer surrounding the semiconductor stack reflector.

US Patent:

52532631, Oct 12, 1993

Filed:

Mar 12, 1992

Appl. No.:

7/850083

Inventors:

Michael Jansen - Los Angeles CA
Jane J. Yang - Los Angeles CA
Szutsun S. Ou - Manhattan Beach CA
Thomas J. Roth - Redondo Beach CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

H01S 319

US Classification:

372 45

Abstract:

A surface-emitting semiconductor injection laser for use in fabricating high-power two-dimensional monolithic laser arrays. The surface-emitting semiconductor laser includes a substrate and an active layer and a pair of cladding layers formed on the substrate. A folded resonator cavity is formed by highly-reflective 45. degree. and 90. degree. micromirrors that are etched at either end of the active layer and by a partially-reflective reflector that is positioned between the 45. degree. micromirror and the substrate for outcoupling the laser light from the resonator cavity. The semiconductor laser is mounted junction down on a heat sink to position the active layer close to the heat sink for good heat dissipation at high power levels. In one preferred embodiment of the present invention, the substrate is optically opaque and an opening is etched in the substrate for outcoupling the laser light. In another preferred embodiment of the invention, the substrate is optically transparent and a microlens is formed on the substrate to collimate the laser light.

US Patent:

52767000, Jan 4, 1994

Filed:

Mar 12, 1992

Appl. No.:

7/849911

Inventors:

Michael Jansen - Los Angeles CA
Dan Botez - Redondo Beach CA
Luke J. Mawst - Torrance CA
Thomas J. Roth - Redondo Beach CA
Jane J. Yang - Los Angeles CA

Assignee:

TRW Inc. - Redondo Beach CA

International Classification:

H01S 319

US Classification:

372 50

Abstract:

This invention discloses a semiconductor laser incorporating a plurality of resonant optical waveguide array cells. In each of the resonant optical waveguide array cells, leaky waveguide elements are coupled together such that radiation leaked from one antiguide element is coupled with radiation propagating along another antiguide element across an interelement region. As the radiation propagates through the array it is reflected at each end of the array until it builds up enough optical gain to reach lasing threshold. Then, radiation is leaked from the sides of each array such that this radiation can impinge other resonant optical waveguide arrays and be coupled with these arrays in phase to develop a laser beam having a higher intensity than can be achieved with a single array semiconductor laser.

US Patent:

62919083, Sep 18, 2001

Filed:

Oct 6, 1999

Appl. No.:

9/413402

Inventors:

Dean Tran - Westminister CA
John Joseph Berenz - San Pedro CA
Luis M. Rochin - Temecula CA
Thomas J. Roth - Redondo Beach CA
Ronald A. DePace - Mission Viejo CA

Assignee:

TRW Inc. - Lyndhurst OH

International Classification:

H01H 3514

US Classification:

307112

Abstract:

A micro-miniature switch apparatus (10) includes a substrate (12) having a surface (14) with first and second channels (16, 18) extending from the surface (14) into the substrate (12). The first and second channels (16, 18) are spaced apart from each other, with a channel axis (20) extending longitudinally through the first and second channels (16, 18). A body (68) that is movable relative to the substrate (12) includes two arms (70, 72). Each of the arms (70, 72) extends into one of the first and second channels (16, 18) to support the body (68) for movement relative to the substrate (12) between first and second electrical conditions of the switch apparatus (10).