Thomas J Sharpe

US Patent:

6552626, Apr 22, 2003

Filed:

Jan 12, 2000

Appl. No.:

09/482175

Inventors:

Thomas M. Sharpe - Fountain Valley CA
Donald A. Charlton - Huntington Beach CA
Richard W. Burns - Orange CA

Assignee:

Raytheon Company - Lexington MA

International Classification:

H01P 115

US Classification:

333104, 455 78, 455 83

Abstract:

A high power PIN diode single pole double throw (SPDT) switch for use in radar systems transmitting at over 50 watts of power. These systems require a switch that will provide adequate isolation for the sensitive amplifier circuits in the receiver subsystem of the radar from the high power transmit pulses in the event there is a bias failure such that the PIN diodes are at zero bias. By utilizing one single pole single throw (SPST) switch assembly between the transmitter and the antenna and at least two SPST switch assemblies between the antenna and the receiver, this isolation is achieved.

US Patent:

6882247, Apr 19, 2005

Filed:

May 15, 2002

Appl. No.:

10/146186

Inventors:

Robert C. Allison - Rancho Palos Verdes CA, US
Jerold K. Rowland - Torrance CA, US
Thomas M. Sharpe - Fountain Valley CA, US

Assignee:

Raytheon Company - Waltham MA

International Classification:

H03H007/01

US Classification:

333182, 333183, 333260

Abstract:

A filtered button DC interconnect employing a compressible conductor such as a finely wound wire mesh imbedded within a series of dielectric and ferrite cylinders. The compressible conductor is captivated within the series of dielectric and ferrite cylinders to ensure proper contact with mating surfaces of interconnected circuits. The interconnect serves as an RF filter by providing rejection of RF and microwave frequencies between the interconnected circuits.