Thomas W Weeks

US Patent:

20080204068, Aug 28, 2008

Filed:

Feb 28, 2007

Appl. No.:

11/680283

Inventors:

Erik M. Dahlstrom - Burlington VT, US
Benjamin T. Voegeli - Burlington VT, US
Thomas W. Weeks - Morrisville VT, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G01R 31/26

US Classification:

324768, 702 58

Abstract:

A method for testing bipolar transistors in an integrated circuit includes first measuring first conductances of leakage paths between collectors and emitters of a first plurality of bipolar transistors with a known number of defects, calculating a per defect conductance value using the measured first conductances and the known number of defects to derive the linear relation. The method then measures second conductances of leakage path between collectors and emitters of a second plurality of bipolar transistors under test and having an unknown number of defects. Using the measured leakage path current from the second conductances and the linear relation, the number of defects related to the second plurality of bipolar transistors under test may be accurately determined.

US Patent:

58203346, Oct 13, 1998

Filed:

Jan 17, 1996

Appl. No.:

8/587636

Inventors:

James A. Darcy - Windham NH
Thomas E. Weeks - Manchester NH

Assignee:

Standard Duplicating Machines Corporation - Andover MA

International Classification:

B65G 5906

US Classification:

4147981

Abstract:

In a sheet set feeder, a shutter mechanism disposed at least in part beneath a hopper for receiving a stack of offset-jogged sheet sets defines an aperture sized to admit individual sets from the stack. The shutter mechanism is driven so that the aperture is moved from beneath one end of the bottommost sheet set--where a retainer supports the next-to-bottommost sheet set--to beneath the other end of the bottommost set. Individual sets fed by the feeder are then carried by a conveyor to a sheet set processor.

US Patent:

52214257, Jun 22, 1993

Filed:

Aug 21, 1991

Appl. No.:

7/748114

Inventors:

Gary W. Blanchard - Milton VT
Charles R. Bossi - Burlington VT
Edward H. Payne - Essex Junction VT
Thomas W. Weeks - Essex Junction VT

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

B44C 122

US Classification:

156643

Abstract:

A system for reducing the concentration of foreign material on a wafer etched in a reactive ion etch chamber is disclosed. As a radio frequency voltage is applied within the etch chamber, the pressure within the etch chamber may be reduced to a base pressure. Also, the flow of gas into the etch chamber may be maintained. This may include minimizing the flow of high reactive gas into the etch chamber while maintaining the flow of low reactive gas therein. The system further includes deactivating the radio frequency voltage. Deactivating the radio frequency voltage may be accomplished by gradually reducing the voltage to a minimum voltage. The gradual reduction may be accomplished by incrementally reducing the voltage in a series of steps. If reactive ion etching occurs with magnetic enhancements, the magnetic field applied to the etch chamber may be deactivated, typically prior to the reduction of the radio frequency voltage.

US Patent:

61263842, Oct 3, 2000

Filed:

Nov 7, 1997

Appl. No.:

8/966462

Inventors:

James A. Darcy - Windham NH
Thomas E. Weeks - Manchester NH
Gilbert G. Fryklund - Winchester MA

Assignee:

Standard Duplicating Machines Corporation - Andover MA

International Classification:

B65G 5906

US Classification:

414800

Abstract:

A sheet set feeder receives a stack of offset-jogged sheet sets, including a topmost sheet set and a next-to-topmost sheet set. The feeder separates the topmost sheet set from the remainder of the stack.

US Patent:

55562540, Sep 17, 1996

Filed:

Jun 7, 1995

Appl. No.:

8/486931

Inventors:

James A. Darcy - Windham NH
Thomas E. Weeks - Manchester NH

Assignee:

Standard Duplicating Machines Corporation - Andover MA

International Classification:

B65G 5906
B65H 324

US Classification:

4147981

Abstract:

In a sheet set feeder, a shutter mechanism disposed at least in part beneath a hopper for receiving a stack of offset-jogged sheet sets defines an aperture sized to admit individual sets from the stack. The shutter mechanism is driven so that the aperture is moved from beneath one end of the bottommost sheet set--where a retainer supports the next-to-bottommost sheet set--to beneath the other end of the bottommost set. Individual sets fed by the feeder are then carried by a conveyor to a sheet set processor.

US Patent:

20170229358, Aug 10, 2017

Filed:

Feb 4, 2016

Appl. No.:

15/015478

Inventors:

- Grand Cayman, KY
Gary L. Milo - Milton VT, US
Thomas W. Weeks - Hyde Park VT, US
Patrick S. Spinney - Charlotte VT, US
John C. Hall - Essex Junction VT, US
Brian P. Conchieri - Essex VT, US
Brett T. Cucci - Essex Junction VT, US
Thomas C. Lee - Essex Junction VT, US

International Classification:

H01L 21/66
G01R 31/28
H01L 23/544

Abstract:

Aspects of the present disclosure include a test structure that includes two or more devices. Each device includes a wire disposed within a dielectric and a first via disposed over the wire and in electrical contact with the wire. Each device includes a test pad electrically connected to the first via and a polysilicon resistor electrically connected to the wire. Each of the polysilicon resistors of the two or more devices are electrically tied together. A method for forming the interconnect structure to be used for testing is also provided.

US Patent:

20140354392, Dec 4, 2014

Filed:

Jun 4, 2013

Appl. No.:

13/909464

Inventors:

- Armonk NY, US
Dinh Dang - Essex Junction VT, US
David A. DeMuynck - Underhill VT, US
Sarah A. McTaggart - South Burlington VT, US
Gary L. Milo - Milton VT, US
Melissa J. Roma - Burlington VT, US
Jeffrey L. Thompson - Woodbury VT, US
Thomas W. Weeks - Morrisville VT, US

International Classification:

H01L 49/02

US Classification:

336200, 438 3

Abstract:

A method including forming a first metal wire in a first dielectric layer, the first metal wire including a first vertical side opposite from a second vertical side; and forming a second metal wire in a second dielectric layer above the first dielectric layer, the second metal wire including a third vertical side opposite from a fourth vertical side, where the first vertical side is laterally offset from the third vertical side by a first predetermined distance, and the second vertical side is laterally offset from the fourth vertical side by a second predetermined distance, where the first metal wire and the second metal wire are in direct contact with one another.