Thomas C Welch

US Patent:

8314473, Nov 20, 2012

Filed:

May 4, 2010

Appl. No.:

12/773552

Inventors:

Michael Gruenhagen - Salt Lake City UT, US
Thomas P. Welch - South Jordan UT, US
Eric J. Woolsey - Draper UT, US

Assignee:

Fairchild Semiconductor Corporation - San Jose CA

International Classification:

H01L 21/70

US Classification:

257502, 438612

Abstract:

Standoff structures that can be used on the die backside of semiconductor devices and methods for making the same are described. The devices contain a silicon substrate with an integrated circuit on the front side of the substrate and a backmetal layer on the backside of the substrate. Standoff structures made of Cu of Ni are formed on the backmetal layer and are embedded in a Sn-containing layer that covers the backmetal layer and the standoff structures. The standoff structures can be isolated from each other so that they are not connected and can also be configured to substantially mirror indentations in the leadframe that is attached to the Sn-containing layer. Other embodiments are described.

US Patent:

20060086798, Apr 27, 2006

Filed:

Oct 21, 2005

Appl. No.:

11/256577

Inventors:

Michael Robertson - San Diego CA, US
Kevin Carmony - San Diego CA, US
Thomas Welch - San Diego CA, US

International Classification:

G06K 7/10

US Classification:

235462100

Abstract:

Disclosed herein are network systems that can retain pending forwarded messages for delivery at a specified time, and email clients functional to forward email messages to those servers with a delivery time and a list of recipient addresses and methods for operating those and similar systems. Also disclosed are network server systems that provide access to pending email messages to be forward to clients, permitting the listing, retrieval, searching and deletion of pending messages. Detailed information on various example embodiments of the inventions are provided in the Detailed Description below, and the inventions are defined by the appended claims.

US Patent:

20060086799, Apr 27, 2006

Filed:

Oct 21, 2005

Appl. No.:

11/256588

Inventors:

Michael Robertson - San Diego CA, US
Kevin Carmony - San Diego CA, US
Thomas Welch - San Diego CA, US

International Classification:

G06K 7/10

US Classification:

235462100

Abstract:

Disclosed herein are network systems that can retain pending forwarded messages for delivery at a specified time, and email clients functional to forward email messages to those servers with a delivery time and a list of recipient addresses and methods for operating those and similar systems. Also disclosed are network server systems that provide access to pending email messages to be forward to clients, permitting the listing, retrieval, searching and deletion of pending messages. Detailed information on various example embodiments of the inventions are provided in the Detailed Description below, and the inventions are defined by the appended claims.

US Patent:

20110031596, Feb 10, 2011

Filed:

Aug 5, 2009

Appl. No.:

12/535963

Inventors:

Mike D. Gruenhagen - Salt Lake City UT, US
James J. Murphy - South Jordan UT, US
Suku Kim - South Jordan, KR
Jim Pierce - Sandy UT, US
William S. Beggs - Salt Lake City UT, US
Thomas P. Welch - South Jordan UT, US

International Classification:

H01L 23/495
H01L 23/498
H01L 23/488
B23K 35/22

US Classification:

257666, 257737, 257690, 428576, 257E23031, 257E23068, 257E23023

Abstract:

Semiconductor devices containing nickel-titanium (NiTi or TiNi) compounds or alloys and methods for making such devices are described. The devices contain a silicon substrate with an integrated circuit, a contact layer contacting the substrate, a TiNi-containing soldering layer on the contact layer, an oxidation prevention layer on the soldering layer, a solder bump on the soldering layer, and a lead frame or PCB attached to the solder bump. The combination of the Ti and Ni materials in the soldering layer exhibits many features not found in the Ti and Ni materials alone, such as reduced wafer warpage, increased ductility for improved elasticity, decreased consumption of the Ni in the soldering layer, and decreased manufacturing costs. Other embodiments are described.

US Patent:

20120322211, Dec 20, 2012

Filed:

Aug 29, 2012

Appl. No.:

13/597500

Inventors:

Michael Gruenhagen - Salt Lake City UT, US
Thomas P. Welch - South Jordan UT, US
Eric J. Woolsey - Draper UT, US

International Classification:

H01L 21/60

US Classification:

438123, 257E21506

Abstract:

Standoff structures that can be used on the die backside of semiconductor devices and methods for making the same are described. The devices contain a silicon substrate with an integrated circuit on the front side of the substrate and a backmetal layer on the backside of the substrate. Standoff structures made of Cu of Ni are formed on the backmetal layer and are embedded in a Sn-containing layer that covers the backmetal layer and the standoff structures. The standoff structures can be isolated from each other so that they are not connected and can also be configured to substantially mirror indentations in the leadframe that is attached to the Sn-containing layer. Other embodiments are described.