Thy H Tran

US Patent:

58519270, Dec 22, 1998

Filed:

Aug 29, 1997

Appl. No.:

8/920656

Inventors:

Paul Kevin Cox - Austin TX
Thy Ngu-Uyen Tran - Vancouver WA
Samuel Jay Wright - Austin TX
Judith Sobresky - Dripping Springs TX

Assignee:

Motorola, Inc. - Schaumburg IL

International Classification:

H01L 21285
H01L 21311
H01L 21336
H01L 218244

US Classification:

438744

Abstract:

A method for forming a semiconductor device, including providing a silicon substrate (10), forming a gate stack (11) on the substrate (10), coating a deep ultra-violet (DUV) photoresist (30) on the gate stack (11), exposing and developing the photoresist (30), and etching the gate stack (11). According to the present invention, the gate stack (11) has a dielectric nitride layer (26), particularly, a silicon nitride layer. An adhesive oxide layer (28) is provided between the nitride layer (26) and the photoresist (30) to prevent undesirable lifting of the photoresist (30). Yield is greatly increased and defectivity is reduced.