Timothy Lee Conway

US Patent:

7811844, Oct 12, 2010

Filed:

Aug 29, 2008

Appl. No.:

12/201943

Inventors:

Daniel N. Carothers - Oro Valley AZ, US
Craig M. Hill - Warrenton VA, US
Andrew T. S. Pomerene - Leesburg VA, US
Timothy J. Conway - Gainesville VA, US
Rick L. Thompson - Amherst NH, US
Vu A. Vu - Falls Church VA, US
Robert Kamocsai - Manassas VA, US
Joe Giunta - Warrenton VA, US
Jonathan N. Ishii - Fredericksburg VA, US

Assignee:

BAE Systems Information and Electronic Systems Integration Inc. - Nashua NH

International Classification:

H01L 21/00

US Classification:

438 31, 438311, 257347, 257E27112, 257E21545, 257E21561

Abstract:

A method for fabricating photonic and electronic devices on a substrate is disclosed. Multiple slabs are initially patterned and etched on a layer of a substrate. An electronic device is fabricated on a first one of the slabs and a photonic device is fabricated on a second one of the slabs, such that the electronic device and the photonic device are formed on the same layer of the substrate.

US Patent:

8343792, Jan 1, 2013

Filed:

Oct 27, 2008

Appl. No.:

12/521853

Inventors:

Daniel N. Carothers - Oro Valley AZ, US
Craig M. Hill - Warrenton VA, US
Andrew T. S. Pomerene - Leesburg VA, US
Vu A. Vu - Falls Church VA, US
Robert Kamocsai - Manassas VA, US
Timothy J. Conway - Gainesville VA, US

Assignee:

BAE Systems Information and Electronic Systems Integration Inc. - Nashua NH

International Classification:

H01L 21/00

US Classification:

438 57, 438 96, 438478, 257431, 257458

Abstract:

An improved method for manufacturing a lateral germanium detector is disclosed. A detector window is opened through an oxide layer to expose a doped single crystalline silicon layer situated on a substrate. Next, a single crystal germanium layer is grown within the detector window, and an amorphous germanium layer is grown on the oxide layer. The amorphous germanium layer is then polished to leave only a small portion around the single crystal germanium layer. A dielectric layer is deposited on the amorphous germanium layer and the single crystal germanium layer. Using resist masks and ion implants, multiple doped regions are formed on the single crystal germanium layer. After opening several oxide windows on the dielectric layer, a refractory metal layer is deposited on the doped regions to form multiple germanide layers.

US Patent:

20080195527, Aug 14, 2008

Filed:

Feb 13, 2007

Appl. No.:

11/674644

Inventors:

Anthony G. Barreiro - San Francisco CA, US
Ernest Ray Parker Gaylord - San Francisco CA, US
Eric C. Kjome - San Francisco CA, US
Timothy Conway - Los Altos CA, US
Steve McVay - Campbell CA, US

Assignee:

ARTLOAN FINANCIAL SERVICES, LLC - San Francisco CA

International Classification:

G06Q 40/00

US Classification:

705 38

Abstract:

A method and system of exchanging collectibles for a loan of money allows an Applicant to remotely apply for and receive funds in exchange for works of art and other collectibles. An Applicant specifies the loan sought and submits personal and collateral information. Thereafter, the form and information are analyzed and a loan amount is determined. The Applicant transfers the collectible to the Lender over a delivery channel. Upon final approval of the loan, the Lender transfers funds to the Applicant. A similar process may be undertaken for items at auction. Auction lots are pre-approved by Lender. If an Applicant wins the auction lot, the Applicant pays a Residual Amount on the item. The Lender pays the remainder of the auction price. In either situation, the Applicant may pay off the loan in four months for return of the collectible or may renew the loan.

US Patent:

20100092682, Apr 15, 2010

Filed:

Aug 29, 2008

Appl. No.:

12/521855

Inventors:

Daniel N. Carothers - Oro Valley AZ, US
Craig M. Hill - Warrenton VA, US
Andrew T.S. Pomerene - Leesburg VA, US
Thomas J. McIntyre - Nokesville VA, US
Timothy J. Conway - Gainesville VA, US
Jonathan N. Ishii - Fredericksburg VA, US

Assignee:

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INT - Nashua NH

International Classification:

B05D 3/02

US Classification:

4273833

Abstract:

A method for fabricating a thermal optical heating element capable of adjusting refractive index of an optical waveguide is disclosed. A silicon block is initially formed on a cladding layer on a silicon substrate. The silicon block is located in close proximity to an optical waveguide. A cobalt layer is deposited on the silicon block. The silicon block is then annealed to cause the cobalt layer to react with the silicon block to form a cobalt silicide layer. The silicon block is again annealed to cause the cobalt silicide layer to transform into a cobalt di-silicide layer.