Timothy J Dunbar

US Patent:

6617609, Sep 9, 2003

Filed:

Nov 5, 2001

Appl. No.:

10/012655

Inventors:

Tommie W. Kelley - Coon Rapids MN
Larry D. Boardman - Woodbury MN
Timothy D. Dunbar - Woodbury MN
Todd D. Jones - St. Paul MN
Dawn V. Muyres - St. Paul MN
Mark J. Pellerite - Woodbury MN
Terrance P. Smith - Woodbury MN

Assignee:

3M Innovative Properties Company - St. Paul MN

International Classification:

H01L 5100

US Classification:

257 40, 257411, 438 99, 438281

Abstract:

Provided is an organic thin film transistor comprising a siloxane polymeric layer interposed between a gate dielectric and an organic semiconductor layer. An integrated circuit comprising thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

US Patent:

6768132, Jul 27, 2004

Filed:

Mar 7, 2002

Appl. No.:

10/094007

Inventors:

Terrance P. Smith - Woodbury MN
Mark J. Pellerite - Woodbury MN
Tommie W. Kelley - Coon Rapids MN
Dawn V. Muyres - St. Paul MN
Dennis E. Vogel - Lake Elmo MN
Kim M. Vogel - Lake Elmo MN
Larry D. Boardman - Woodbury MN
Timothy D. Dunbar - Woodbury MN

Assignee:

3M Innovative Properties Company - Saint Paul MN

International Classification:

H01L 5100

US Classification:

257 40, 257410, 257411, 438 99, 428901

Abstract:

An organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The semiconductor layer comprises a material selected from an acene, substituted with at least one electron-donating group, halogen atom, or a combination thereof, or a benzo-annellated acene or polybenzo-annellated acene, which optionally is substituted with at least one electron-donating group, halogen atom, or a combination thereof. Methods of making a thin film transistor and an integrated circuit comprising thin film transistors.

US Patent:

6841079, Jan 11, 2005

Filed:

May 31, 2002

Appl. No.:

10/160738

Inventors:

Timothy D. Dunbar - Woodbury MN, US
Lawrence A. Zazzera - Edina MN, US
Mark J. Pellerite - Woodbury MN, US
Larry D. Boardman - Woodbury MN, US
George G. Moore - Afton MN, US
Miguel A. Guerra - Woodbury MN, US
Cheryl L. Elsbernd - Woodbury MN, US

Assignee:

3M Innovative Properties Company - St. Paul MN

International Classification:

B81C 100

US Classification:

216 2, 216 11, 216 99, 4272556, 427582, 427585, 427301, 427309

Abstract:

Silicon substrates having Si—H bonds are chemically modified using a fluorinated olefin having the formula:.

US Patent:

6946676, Sep 20, 2005

Filed:

Nov 5, 2001

Appl. No.:

10/012654

Inventors:

Tommie W. Kelley - Coon Rapids MN, US
Larry D. Boardman - Woodbury MN, US
Timothy D. Dunbar - Woodbury MN, US
Todd D. Jones - St. Paul MN, US
Dawn V. Muyres - St. Paul MN, US
Mark J. Pellerite - Woodbury MN, US
Terrance P. Smith - Woodbury MN, US

Assignee:

3M Innovative Properties Company - St. Paul MN

International Classification:

H01L051/00
H01L029/78

US Classification:

257 40, 257411, 438 82, 438 99, 438216

Abstract:

Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

US Patent:

7352000, Apr 1, 2008

Filed:

Sep 15, 2005

Appl. No.:

11/227501

Inventors:

Tommie W. Kelley - Coon Rapids MN, US
Larry D. Boardman - Woodbury MN, US
Timothy D. Dunbar - Woodbury MN, US
Todd D. Jones - St. Paul MN, US
Dawn V. Muyres - St. Paul MN, US
Mark J. Pellerite - Woodbury MN, US
Terrance P. Smith - Woodbury MN, US

Assignee:

3M Innovative Properties Company - St. Paul MN

International Classification:

H01L 29/08
H01L 35/24
H01L 51/00

US Classification:

257 40, 257411, 257 82, 257E21259, 257E2126, 438 99, 438216

Abstract:

Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

US Patent:

7352038, Apr 1, 2008

Filed:

Sep 15, 2005

Appl. No.:

11/227547

Inventors:

Tommie W. Kelley - Coon Rapids MN, US
Larry D. Boardman - Woodbury MN, US
Timothy D. Dunbar - Woodbury MN, US
Todd D. Jones - St. Paul MN, US
Dawn V. Muyres - St. Paul MN, US
Mark J. Pellerite - Woodbury MN, US
Terrance P. Smith - Woodbury MN, US

Assignee:

3M Innovative Properties Company - St. Paul MN

International Classification:

H01L 29/94

US Classification:

257410, 257 40, 257 59, 257 72, 257E51006, 257E51007, 257E51032

Abstract:

Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.

US Patent:

7399668, Jul 15, 2008

Filed:

Sep 30, 2004

Appl. No.:

10/954413

Inventors:

Timothy D. Dunbar - Woodbury MN, US
Tommie W. Kelley - Shoreview MN, US

Assignee:

3M Innovative Properties Company - St. Paul MN

International Classification:

H01L 21/8238

US Classification:

438216, 438 99

Abstract:

A method of making an electronic device by (a) depositing a substantially nonfluorinated polymeric layer onto a dielectric layer using a plasma-based deposition technique selected from the group consisting of (i) plasma polymerizing a precursor comprising monomers, and (ii) sputtering from a target comprising one or more polymers of interpolymerized units of monomers, the monomers being selected from the group consisting of aromatic monomers, substantially hydrocarbon monomers, and combinations thereof; and (b) depositing an organic semiconductor layer adjacent to said polymeric layer.

US Patent:

7507618, Mar 24, 2009

Filed:

Jun 27, 2005

Appl. No.:

11/167800

Inventors:

Timothy D. Dunbar - Woodbury MN, US

Assignee:

3M Innovative Properties Company - St. Paul MN

International Classification:

H01L 21/336
C03B 8/00

US Classification:

438197, 438231, 438233, 438698, 977811, 65 172, 65 173, 65 605

Abstract:

A method of making a thin film transistor comprises (a) solution depositing a dispersion comprising semiconducting metal oxide nanoparticles onto a substrate, (b) sintering the nanoparticles to form a semiconductor layer, and (c) optionally subjecting the resulting semiconductor layer to post-deposition processing.

Address:

3093 Maple Leaf Ct, Saint Paul, MN 55109

Phone:

6514832240

VIN:

2G1WT58K979244372

Make:

CHEVROLET

Model:

IMPALA

Year:

2007