Vijay Viswanathan - Apex NC, US Dev Alok Girdhar - Melbourne FL, US Timothy Henson - Torrance CA, US David Paul Jones - South Glamorgan, GB
Assignee:
International Rectifier Corporation - El Segundo CA
International Classification:
H01L 21/8242 H01L 21/20 H01L 21/76
US Classification:
438243, 438386, 438427, 257E21549, 257E21651
Abstract:
A process for fabrication of a semiconductor device that includes forming a first trench in a semiconductor body, forming spaced spacers in the first trench, and forming a narrower second trench at the bottom of the first trench using the spacers as a mask.