Timothy D Laarman

US Patent:

51804344, Jan 19, 1993

Filed:

Mar 11, 1991

Appl. No.:

7/667262

Inventors:

Gary M. DiDio - Highland MI
Kermit Jones - Rochester MI
Kevin Hoffman - Sterling Heights MI
Timothy Laarman - Almont MI
Jon Call - Royal Oak MI
Prem Nath - Rochester Hills MI

Assignee:

United Solar Systems Corporation - Troy MI

International Classification:

C23C 1650
C23C 1654

US Classification:

118718

Abstract:

In continuous apparatus for the glow discharge deposition of amorphous silicon alloy solar cells of p-i-n-type configuration in a plurality of interconnected, dedicated deposition chambers, a plasma bar operatively disposed between at least the plasma regions in which the layer pairs of amorphous silicon alloy material defining the major semiconductor junction of the solar cell are deposited. The plasma bar is adapted to initiate a plasma so as to prevent chemically adsorbed contaminants from deleteriously affecting the surface of the first deposited of the layer pair, thereby improving the open circuit voltage of the solar cell. In a similar manner, the plasma bar may also be provided between the layer pairs of amorphous silicon alloy material which combine to define the minor semiconductor junction of the solar cell. Finally, a plasma bar may be disposed between the oxide-based layer of a back reflector for reducing oxygen contamination of the silicon alloy material deposited thereupon.

US Patent:

44623330, Jul 31, 1984

Filed:

Oct 27, 1982

Appl. No.:

6/437075

Inventors:

Prem Nath - Rochester MI
Kevin R. Hoffman - Sterling Heights MI
Timothy D. Laarman - Almont MI

Assignee:

Energy Conversion Devices, Inc. - Troy MI

International Classification:

C23C 1310

US Classification:

118723

Abstract:

A system for introducing, confining and evacuating process gases adjacent the cathode region of glow discharge deposition apparatus, said apparatus adapted to deposit at least one layer of semiconductor material onto a substrate. The deposition apparatus includes at least one dedicated deposition chamber into which process gases are introduced for glow discharge disassociation into species. The system of the present invention includes a baffling manifold adjacent the cathode, said manifold adapted to substantially reduce areas of localized rarification and compression of process gases flowing through the plasma region for substantially preventing adjacent stagnant and rapidly moving areas of process gases from forming nonuniform flow patterns as the semiconductor layer is deposited on the surface of the substrate. The system is also adapted to expose the entire transverse width of the substrate for the deposition of semiconductor material thereunto.

US Patent:

51012600, Mar 31, 1992

Filed:

Nov 5, 1990

Appl. No.:

7/609040

Inventors:

Prem Nath - Rochester MI
John Call - Royal Oak MI
Kevin Hoffman - Sterling Heights MI
Timothy D. Laarman - Almont MI
Gary DiDio - Highland MI

Assignee:

Energy Conversion Devices, Inc. - Troy MI

International Classification:

H01L 2348
H01L 2946
H01L 2962
H01L 2964

US Classification:

357 67

Abstract:

A multilayered, light-scattering back reflector for a photovoltaic device, said back reflector including a first relatively hard, textured layer atop a substrate and a second highly reflective layer conformally disposed atop the first layer. The back reflector may further include a third light scattering layer formed atop said second layer, said third layer adapted to further provide a barrier layer between the body of semiconductor material from which the photovoltaic device is formed and the multilayered back reflector.

US Patent:

52325180, Aug 3, 1993

Filed:

Jan 16, 1992

Appl. No.:

7/821963

Inventors:

Prem Nath - Rochester Hills MI
Timothy Laarman - Almont MI
Avtar Singh - Roseville MI

Assignee:

United Solar Systems Corporation - Troy MI

International Classification:

H01L 3104

US Classification:

136251

Abstract:

A photovoltaic roofing system includes a plurality of roofing panels each having a photovoltaic device thereupon and each including an electrical connector engageable with a connector on another panel. The panels includes upstanding flanges and a batten and seam roof construction may be readily configured by interconnecting the panels, fastening them to the roof and covering adjoining flanges with the battens.

US Patent:

45207577, Jun 4, 1985

Filed:

Dec 23, 1983

Appl. No.:

6/564863

Inventors:

Prem Nath - Rochester MI
Kevin R. Hoffman - Sterling Heights MI
Timothy D. Laarman - Almont MI

Assignee:

Energy Conversion Devices, Inc. - Troy MI

International Classification:

C23C 1100

US Classification:

118723

Abstract:

A system for introducing, confining and evacuating process gases adjacent the cathode region of glow discharge deposition apparatus, said apparatus adapted to deposit at least one layer of semiconductor material onto a substrate. The deposition apparatus includes at least one dedicated deposition chamber into which process gases are introduced for glow discharge disassociation into species. The system of the present invention includes a baffling manifold adjacent the cathode, said manifold adapted to (1) substantially prevent adjacent slowly and rapidly moving streams of process gases from forming flow patterns as the semiconductor material is deposited onto the substrate, and (2) thoroughly mix the process gases for only introducing homogeneous, uniform process gas mixtures into the plasma region, thereby preventing adjacent nonhomogeneous, nonuniform mixtures from forming flow patterns as the semiconductor material is deposited onto the substrate. The system is also adapted to expose the entire transverse width of the substrate for the deposition of semiconductor material thereunto.

US Patent:

47739444, Sep 27, 1988

Filed:

Sep 8, 1987

Appl. No.:

7/094357

Inventors:

Prem Nath - Rochester MI
Timothy Laarman - Almont MI
Craig Vogeli - New Baltimore MI
Kenneth Whelan - Clawson MI
Bernard Kelly - Sterling Heights MI

Assignee:

Energy Conversion Devices, Inc. - Troy MI

International Classification:

H01L 3106
H01L 3118

US Classification:

136249

Abstract:

A large area, high current, low voltage photovoltaic module including a common bottom electrode upon which a means adapted to collect and transport photogenerated current is disposed. By electrically interconnecting a plurality of said large area modules in series, the voltage obtained therefrom can be added so as to obtain any desired voltage output therefrom.

US Patent:

50929399, Mar 3, 1992

Filed:

Nov 30, 1990

Appl. No.:

7/620047

Inventors:

Prem Nath - Rochester Hills MI
Timothy Laarman - Almont MI

Assignee:

United Solar Systems Corporation - Troy MI

International Classification:

H01L 31048
H01L 3118
H01L 3105

US Classification:

136251

Abstract:

A roof structure 10 comprises panels 14 and 16 of desired length each having a galvanized steel supportive layer which has side supporting flanges 22 interconnected together to form the roof assembly 10. The mid portion 20 of each panel has a photovoltaic surface made from amorphous semiconductor material which is laminated onto the galvanized steel with a protective plastic transparent polymer coating laminated above the photovoltaic material. The laminated galvanized steel and the photovoltaic layers are rolled into a coil and transported on site where it is unrolled, cut to size having the flanges formed to construct the rigid panels and having the panels assembled together via clips 26 and weather-proof battens 32. The photovoltaic surfaces are connected together via electrical conduit 34 coupled through couplings 88 under the panels and between the frame members 30.

US Patent:

45377952, Aug 27, 1985

Filed:

Aug 3, 1984

Appl. No.:

6/637358

Inventors:

Prem Nath - Rochester MI
Kevin R. Hoffman - Sterling Heights MI
Timothy D. Laarman - Almont MI

Assignee:

Sovonics Solar Systems - Solon OH

International Classification:

H01L 21365

US Classification:

427 39

Abstract:

A method for introducing sweep gas through a baffle system adapted for use with glow discharge deposition apparatus in which successive amorphous semiconductor layers are deposited on a substrate. The deposition apparatus includes at least a pair of adjacent dedicated deposition chambers into each of which different process gases are introduced, the chambers being operatively connected by a gas gate. Inert gases are swept through the gas gate to minimize back diffusion of process gases from the chambers. The baffle system is adapted to prevent said sweep gases from entering into turbulent flow when traveling through the gas gate passageway. Further, a sufficient volume per unit time of sweep gas is introduced to insure that some sweep gas flows into the cathode region of the first chamber, thereby substantially preventing process gases and plasma from escaping from the cathode region and forming silane powder.