Timothy A Quick

age ~47

from Boise, ID

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Also known as:

Timothy Allen Quick
Tim Allen Quick
Tim A Quick

Phone and address:: 5364 N Goldie Pl, Boise, ID 83703

Connected to:

Timothy Quick Phones & Addresses

5364 N Goldie Pl, Boise, ID 83703
Chesterfield, MI
Montgomery Village, MD
Houghton, MI

Work

Company:

The hershey company
2008
Position:

Project manager / fi planning business process manager

Education

School / High School:

The American University- Washington, DC
1993
Specialities:

BS in Computer Science

Lawyers & Attorneys

Timothy Quick - Lawyer

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Office:

Law Office of Timothy K. Quick

Specialties:

Real Estate
Economic Litigation
Bankruptcy

ISLN:

911519202

Admitted:

1993

University:

Westmont College, B.A., 1975

Law School:

Western State University, J.D., 1990

Timothy Quick - Lawyer

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Office:

Timothy J. Quick, P.C.

Specialties:

DUI & DWI
Speeding & Traffic Ticket
Criminal Defense
Plaintiffs Personal Injury
Small Business Law
Family Business Law
Construction Law
Construction Defects
Mechanics Liens
Insurance Defense
Criminal Law
Civil Litigation

ISLN:

910028637

Admitted:

1994

University:

George Mason University, B.A., 1989

Law School:

University of Baltimore, J.D., 1994

Resumes

Coo At B&D Cold Heading

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Location:

Greater Detroit Area

Industry:

Automotive

Business & Technology Instructor At Phoenix Union High School District

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Location:

United States

Industry:

Education Management

Timothy Quick

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Location:

United States

Timothy Quick Great Falls, VA

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Work:

The Hershey Company

2008 to 2000
Project Manager / FI Planning Business Process Manager Fannie Mae, Accounting Data Warehouse, PMO Group
Herndon, VA
2007 to 2008
Project Manager, Restatement / Catch-Up / Get Current Fannie Mae
Washington, DC
2006 to 2007
Knowledge Management Portal Freddie Mac
McLean, VA
2006 to 2006
Sr. Project Manager Fannie Mae
Washington, DC
2005 to 2006
Sr. Program Manager The World Bank Group
Washington, DC
2002 to 2005
Resource Management (RM), Team Leader/Consultant The World Bank Group
Washington, DC
1997 to 2000
Project Manager / Information Officer Supermation, Inc

1996 to 1997
Vice-President Operations/R&D World Bank Group

1990 to 1996
Consultant /Information Officer/Business Analyst/Systems Analyst/Trainer Information Technology Group. Inc

1988 to 1989
Vice-President Systems R&D Forhan & Wakefield Group

1988 to 1989
Consultant/Teacher

Education:

The American University
Washington, DC
1993 to 1995
BS in Computer Science The American University
Washington, DC
1984 to 1988
BS in Mathematics

Name / Title

Company / Classification

Phones & Addresses

Timothy Quick
M

Teq Advisors, LLC

10111 Walker Wood Dr, Great Falls, VA 22066

Timothy J. Quick
Principal

The Zeta Epsilon Housing Corporation
Civic/Social Association

25545 Quits Pond Ct, Fairfax, VA 20152

Us Patents

Systems And Methods For Forming Tantalum Oxide Layers And Tantalum Precursor Compounds
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US Patent:

7030042, Apr 18, 2006
Filed:

Aug 28, 2002
Appl. No.:

10/230243
Inventors:

Brian A. Vaartstra - Nampa ID, US
Timothy A. Quick - Boise ID, US
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

H01L 21/31
H01L 21/496
US Classification:

438785, 438681, 438778, 438643
Abstract:

A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.

Systems And Methods For Forming Metal Oxides Using Metal Compounds Containing Aminosilane Ligands
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US Patent:

7087481, Aug 8, 2006
Filed:

Aug 28, 2002
Appl. No.:

10/229841
Inventors:

Brian A. Vaartstra - Nampa ID, US
Timothy A. Quick - Boise ID, US
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

H01L 21/00
US Classification:

438240, 438785, 438681
Abstract:

A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.

Systems And Method For Forming Silicon Oxide Layers
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US Patent:

7115528, Oct 3, 2006
Filed:

Apr 29, 2003
Appl. No.:

10/425514
Inventors:

Brian A. Vaartstra - Nampa ID, US
Timothy A. Quick - Boise ID, US
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

H01L 21/31
US Classification:

438758, 438787
Abstract:

A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.

Systems And Methods For Forming Metal Oxide Layers
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US Patent:

7332442, Feb 19, 2008
Filed:

Jul 12, 2006
Appl. No.:

11/485105
Inventors:

Brian A. Vaartstra - Nampa ID, US
Timothy A. Quick - Boise ID, US
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

H01L 21/31
US Classification:

438758, 438778, 438785, 257E21006, 42725531
Abstract:

A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.

Systems And Methods For Forming Tantalum Oxide Layers And Tantalum Precursor Compounds
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US Patent:

7368402, May 6, 2008
Filed:

Aug 23, 2004
Appl. No.:

10/924096
Inventors:

Brian A. Vaartstra - Nampa ID, US
Timothy A. Quick - Boise ID, US
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

H01L 21/31
H01L 21/469
US Classification:

438785, 438681, 438778, 438643, 438E2135, 438E29343
Abstract:

A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.

Atomic Layer Deposition Systems And Methods Including Metal Beta-Diketiminate Compounds
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US Patent:

7416994, Aug 26, 2008
Filed:

Jun 28, 2005
Appl. No.:

11/168160
Inventors:

Timothy A. Quick - Boise ID, US
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

H01L 21/31
US Classification:

438762, 438789, 257E21269, 257E21274
Abstract:

The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates.

Systems And Methods For Forming Metal Oxides Using Metal Compounds Containing Aminosilane Ligands
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US Patent:

7439195, Oct 21, 2008
Filed:

Jul 17, 2006
Appl. No.:

11/487907
Inventors:

Brian A. Vaartstra - Nampa ID, US
Timothy A. Quick - Boise ID, US
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

H01L 21/31
US Classification:

438786, 438785, 118715
Abstract:

A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.

Beta-Diketiminate Ligand Sources And Metal-Containing Compounds Thereof, And Systems And Methods Including Same
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US Patent:

7439338, Oct 21, 2008
Filed:

Jun 28, 2005
Appl. No.:

11/169065
Inventors:

Dan Millward - Boise ID, US
Timothy A. Quick - Boise ID, US
Assignee:

Micron Technology, Inc. - Boise ID
International Classification:

C07F 5/00
C07F 3/00
C23C 16/00
US Classification:

534 15, 556 32, 556 34, 556 35, 427252
Abstract:

The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one fluorine-containing organic group as a substituent. In other certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one aliphatic group as a substituent selected to have greater degrees of freedom than the corresponding substituent in the β-diketiminate ligands of certain metal-containing compounds known in the art. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.

License Records

Timothy Quick

License #:

28487 - Expired

Category:

Nursing Support

Issued Date:

Dec 21, 1994

Effective Date:

May 28, 1998

Type:

Nurse Aide

Classmates

Timothy Quick

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Schools:

Marinette High School Marinette WI 1980-1984

Timothy Quick

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Schools:

Benzie Central Junior High School Benzonia MI 1980-1984

Timothy Quick

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Schools:

Hamburg High School Hamburg PA 1996-2000

Timothy Quick

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Schools:

Warlick School Gastonia NC 1956-1965, Warlick Elementary School Gastonia NC 1956-1965, Ranlo School Gastonia NC 1958-1965, Holbrook High School Lowell NC 1965-1968

Community:

Robert Stephens, Jesse Lyles, Patsy Quinn, Gail Ethridge, Bob Ipock, Barbara Parker, Lila Braty, Jim Cherry, Linda Carroll, Teresa Glance, Charles Harrison