Timothy L Quick

US Patent:

7030042, Apr 18, 2006

Filed:

Aug 28, 2002

Appl. No.:

10/230243

Inventors:

Brian A. Vaartstra - Nampa ID, US
Timothy A. Quick - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21/31
H01L 21/496

US Classification:

438785, 438681, 438778, 438643

Abstract:

A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.

US Patent:

7087481, Aug 8, 2006

Filed:

Aug 28, 2002

Appl. No.:

10/229841

Inventors:

Brian A. Vaartstra - Nampa ID, US
Timothy A. Quick - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21/00

US Classification:

438240, 438785, 438681

Abstract:

A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.

US Patent:

7115528, Oct 3, 2006

Filed:

Apr 29, 2003

Appl. No.:

10/425514

Inventors:

Brian A. Vaartstra - Nampa ID, US
Timothy A. Quick - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21/31

US Classification:

438758, 438787

Abstract:

A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.

US Patent:

7332442, Feb 19, 2008

Filed:

Jul 12, 2006

Appl. No.:

11/485105

Inventors:

Brian A. Vaartstra - Nampa ID, US
Timothy A. Quick - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21/31

US Classification:

438758, 438778, 438785, 257E21006, 42725531

Abstract:

A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.

US Patent:

7368402, May 6, 2008

Filed:

Aug 23, 2004

Appl. No.:

10/924096

Inventors:

Brian A. Vaartstra - Nampa ID, US
Timothy A. Quick - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21/31
H01L 21/469

US Classification:

438785, 438681, 438778, 438643, 438E2135, 438E29343

Abstract:

A method of forming (and apparatus for forming) a tantalum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and a tantalum precursor compound that includes alkoxide ligands, for example.

US Patent:

7416994, Aug 26, 2008

Filed:

Jun 28, 2005

Appl. No.:

11/168160

Inventors:

Timothy A. Quick - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21/31

US Classification:

438762, 438789, 257E21269, 257E21274

Abstract:

The present invention provides atomic layer deposition systems and methods that include metal compounds with at least one β-diketiminate ligand. Such systems and methods can be useful for depositing metal-containing layers on substrates.

US Patent:

7439195, Oct 21, 2008

Filed:

Jul 17, 2006

Appl. No.:

11/487907

Inventors:

Brian A. Vaartstra - Nampa ID, US
Timothy A. Quick - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

H01L 21/31

US Classification:

438786, 438785, 118715

Abstract:

A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include aminosilane ligands.

US Patent:

7439338, Oct 21, 2008

Filed:

Jun 28, 2005

Appl. No.:

11/169065

Inventors:

Dan Millward - Boise ID, US
Timothy A. Quick - Boise ID, US

Assignee:

Micron Technology, Inc. - Boise ID

International Classification:

C07F 5/00
C07F 3/00
C23C 16/00

US Classification:

534 15, 556 32, 556 34, 556 35, 427252

Abstract:

The present invention provides metal-containing compounds that include at least one β-diketiminate ligand, and methods of making and using the same. In certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one fluorine-containing organic group as a substituent. In other certain embodiments, the metal-containing compounds include at least one β-diketiminate ligand with at least one aliphatic group as a substituent selected to have greater degrees of freedom than the corresponding substituent in the β-diketiminate ligands of certain metal-containing compounds known in the art. The compounds can be used to deposit metal-containing layers using vapor deposition methods. Vapor deposition systems including the compounds are also provided. Sources for β-diketiminate ligands are also provided.