Tram T Nguyen

US Patent:

7510692, Mar 31, 2009

Filed:

Jul 21, 2004

Appl. No.:

10/565353

Inventors:

Daniel Alvarez, Jr. - San Diego CA, US
Jeffrey J. Spiegelman - San Diego CA, US
Joshua T. Cook - Encinitas CA, US
Tram Doan Nguyen - Westminster CA, US
Daniel A. Lev - Somerville MA, US
Troy B. Scoggins - San Diego CA, US

Assignee:

Entegris, Inc. - Chaska MN

International Classification:

B01D 53/38
B01D 53/50
B01D 53/56
B01D 53/62
B01D 53/72
C09K 3/00

US Classification:

423210, 423220, 423230, 423219, 4232451, 4232391, 4232421, 42324401, 42324406, 25218211, 25218232, 25218233

Abstract:

A method for hydride gas purification uses materials having at least one lanthanide metal or lanthanide metal oxide. The method reduces contaminants to less than 100 parts per billion (ppb), preferably 10 ppb, more preferably 1 ppb. The material can also include transition metals and transition metal oxides, rare earth elements and other metal oxides. The invention also includes materials for use in the method of the invention.

US Patent:

20070031321, Feb 8, 2007

Filed:

Jun 23, 2004

Appl. No.:

10/559070

Inventors:

Daniel Alvarez - San Diego CA, US
Daniel Lev - Chicago IL, US
Jeffrey Spiegelman - San Diego CA, US
Tram Nguyen - Westminster CA, US
Russell Holmes - Santee CA, US

International Classification:

C01F 11/22
C01F 5/28

US Classification:

423490000, 423210000

Abstract:

A process, composition and apparatus for the removal of impurities from corrosive gases, particularly halogen-containing gases, down to about 100 ppb concentration are described. The critical component is zirconia (ZrO), which in a variety of physical forms is capable of dehydrating such gases. The zirconia can be in the form of a coating on a substrate, as a granular bulk material, or deposited within the pores of a porous body. The zirconia is retained in a simple container which is easily installed in a gas supply line, such as to a gas- or vapor-deposition manufacturing unit. The purification process can be operated for long periods of time in the presence of these gases. The invention provides final purification to gas streams intended for gas- or vapor-deposition formation of high purity electronic, prosthetic or similar products, and can be used in combination with a preliminary dehydration process or a solid particulate removal unit upstream.