Travis Scott Anderson

US Patent:

20160233108, Aug 11, 2016

Filed:

Feb 4, 2016

Appl. No.:

15/015381

Inventors:

- Arlington VA, US
Jordan Greenlee - Boise ID, US
Travis J. Anderson - Alexandria VA, US
Francis J. Kub - Arnold MD, US

Assignee:

The Government of the United States of America, as represented by the Secretary of the Navy - Arlington VA

International Classification:

H01L 21/324
H01L 29/16
H01L 21/02
H01L 29/207
H01L 21/04
H01L 21/225
H01L 29/20

Abstract:

A symmetric multicycle rapid thermal annealing (SMRTA) method for annealing a semiconductor material without the material decomposing. The SMRTA method includes a first long-time annealing at a first temperature at which the material is thermodynamically stable, followed by multicycle rapid thermal annealing (MRTA) at temperatures at which the material is not thermodynamically stable, followed in turn by a second long-time annealing at a second temperature at which the material is thermodynamically stable. The SMRTA method can be used to form p-type and n-type semiconductor regions in doped III-nitride semiconductors, SiC, and diamond.