Truc Nhu Tran

US Patent:

6827815, Dec 7, 2004

Filed:

Jan 15, 2002

Appl. No.:

10/047076

Inventors:

Mark M. Hytros - Santa Clara CA
Truc T. Tran - Fremont CA
Hongbee Teoh - Saratoga CA
Lawrence Chung-Lai Lei - Milipitas CA
Avgerinos Gelatos - Redwood City CA
Salvador P. Umotoy - Antioch CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

15634533, 15634532, 118715

Abstract:

A showerhead assembly for distributing gases within a processing chamber is provided. In one embodiment, the showerhead assembly includes a cylindrical member having a faceplate coupled thereto. The cylindrical member has an outwardly extending first flange at a first end. The faceplate is coupled to a second end of the cylindrical member and has a plurality of holes formed though a center region of the faceplate. The joint between the cylindrical member and the faceplate allow for relative movement when subjected to thermal stresses. In another embodiment, at least one clamp member retains the faceplate to the second end of the cylindrical member.

US Patent:

20020144783, Oct 10, 2002

Filed:

Apr 5, 2001

Appl. No.:

09/827877

Inventors:

Truc Tran - Fremont CA, US
Ramanujapuram Srinivas - San Jose CA, US
Hong Teoh - Saratoga CA, US
A vgerinos Gelatos - Redwood City CA, US
Marlon Menezes - Campbell CA, US
Vicky Nguyen - San Jose CA, US
Yehuda Demayo - San Jose CA, US
Rommel Ruiz - San Jose CA, US

Assignee:

Applied Materials, Inc.

International Classification:

C23F001/00
C03C025/68
H01L021/302

US Classification:

156/345330, 216/067000, 438/710000

Abstract:

A structure and method which substantially reduce the number of run-in substrates that have to be used in a high temperature (550 C. or greater) processing environment is presented. A barrier to conductive heat transfer is provided between a process gas distribution faceplate and its process chamber support. This allows the gas distribution faceplate to thermally float and substantially reduces the temperature transients in the faceplate, which can cause thermal (temperature) transients when wafer processing is begun. The present configuration uses a thermal separation assembly to substantially block conductive heat transfer to the cold processing chamber, by using a Vespel gasket or stainless steel washers and thereby reduces the thermal gradient experienced by the gas distribution faceplate. As a result of the improved thermal uniformity, the number of run-in wafer that need to be used is reduced by 80 to 95%.

US Patent:

20030124842, Jul 3, 2003

Filed:

Dec 27, 2001

Appl. No.:

10/033544

Inventors:

Mark Hytros - Santa Clara CA, US
Truc Tran - Fremont CA, US
Salvador Umotoy - Antioch CA, US
Lawrence Lei - Milpitas CA, US
Avgerinos Gelatos - Redwood City CA, US
Tong Zhang - Palo Alto CA, US

Assignee:

APPLIED MATERIALS, INC.

International Classification:

C23F001/00
C23C016/00
H01L021/306
H01L021/44

US Classification:

438/680000, 156/345330, 118/715000

Abstract:

Embodiments of the present invention generally relate to an apparatus and method for delivering two separate gas flows to a processing region. One embodiment of a substrate processing chamber adapted to deliver two separate gas flows to a processing region comprises a substrate support having a substrate receiving surface and a showerhead disposed over the substrate receiving surface. The showerhead includes a first passageway having a plurality of first passageway holes and a second passageway having a plurality of second passageway holes. The first passageway is adapted to deliver a first gas flow through the first passageway holes to the substrate receiving surface. The second passageway is adapted to deliver a second gas flow through the second passageway holes to the substrate receiving surface. The substrate processing chamber further includes a plasma power source. The plasma power source may be in electrical communication with the showerhead or with the substrate support to generate a plasma from gases between the showerhead and the substrate support. One embodiment of a method of delivering two separate gas flows to a processing region comprises performing one or more of processes from the group including forming a titanium layer by plasma enhanced chemical vapor deposition, forming a passivation layer by a nitrogen plasma treatment of a titanium layer, forming a composite titanium/titanium nitride layer by an alternating plasma enhanced chemical vapor deposition and a nitrogen plasma treatment, forming a titanium nitride layer by thermal chemical vapor deposition, and plasma treating a titanium nitride layer.

US Patent:

20110230008, Sep 22, 2011

Filed:

May 4, 2010

Appl. No.:

12/773497

Inventors:

Annamalai Lakshmanan - Fremont CA, US
Truc T. Tran - Fremont CA, US
Jeffrey S. Sullivan - Castro Valley CA, US
Jianshe Tang - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 31/18

US Classification:

438 96, 118722, 118723 R, 257E31001

Abstract:

Embodiments of the present invention are directed to apparatus and methods for depositing amorphous and microcrystalline silicon films during the formation of solar cells. Specifically, embodiments of the invention provide for a pre-heated hydrogen-containing gas to be introduced into a processing chamber separately from the silicon-containing gas. A plasma, struck from the heated hydrogen-containing gas, reacts with the silicon-containing gas to produce a silicon film on a substrate.