Tuan V Pham

US Patent:

6934772, Aug 23, 2005

Filed:

Sep 30, 1998

Appl. No.:

09/164527

Inventors:

Vinh X. Bui - Houston TX, US
Tuan Pham - Houston TX, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

G06F013/14

US Classification:

710 14, 315174, 345 98, 345102, 345212, 345213

Abstract:

A method for reducing video display power usage by dithering the brightness. This method can be used to reduce power consumption without having an effect on the brightness of the display screen as perceived by the user or may further reduce the power consumed with a corresponding reduction of brightness.

US Patent:

7328290, Feb 5, 2008

Filed:

Jun 1, 2001

Appl. No.:

09/872600

Inventors:

Kevin B. Leigh - Houston TX, US
Tuan A. Pham - Sugar Land TX, US
Jason W. Whiteman - Cypress TX, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

G06F 13/00

US Classification:

710104, 710100

Abstract:

A system and method of automatically switching control of a bus in a processor-based device is provided. In a server, control of a bus is automatically switched from a controller mounted on the system board to a controller located on an optional expansion card upon connection of the expansion card to the system board. Automatic switching includes isolating the on-board controller from the bus and appropriately terminating any transmission line ends on the bus resulting from the establishment of the alternative control path.

US Patent:

8503229, Aug 6, 2013

Filed:

Jun 6, 2011

Appl. No.:

13/153964

Inventors:

Sanghyun Lee - Davis CA, US
Mohan Dunga - Santa Clara CA, US
Masaaki Higashitani - Cupertino CA, US
Tuan Pham - San Jose CA, US
Franz Kreupl - Munich, DE

Assignee:

SanDisk Technologies Inc. - Plano TX

International Classification:

G11C 11/34
G11C 16/04
H01L 29/94
H01L 21/00
H01L 21/8238

US Classification:

36518501, 365174, 438 3, 438201, 257315

Abstract:

Non-volatile storage elements having a P−/metal floating gate are disclosed herein. The floating gate may have a P− region near the tunnel oxide, and may have a metal region near the control gate. A P− region near the tunnel oxide helps provide good data retention. A metal region near the control gate helps to achieve a good coupling ratio between the control gate and floating gate. Therefore, programming of non-volatile storage elements is efficient. Also, erasing the non-volatile storage elements may be efficient. In some embodiments, having a P− region near the tunnel oxide (as opposed to a strongly doped p-type semiconductor) may improve erase efficiency relative to P+.

US Patent:

20040134008, Jul 15, 2004

Filed:

Jan 10, 2003

Appl. No.:

10/338966

Inventors:

Tuan Pham - Pearland TX, US

International Classification:

A46B009/04
A61B017/24

US Classification:

015/111000, 606/161000

Abstract:

The combination tooth brush and tongue cleaner includes an elongated tubular handle portion having a first end which is closed and a second end opposite the first end which is open. A tooth brush portion extends linearly outwardly form the first end and has a plurality of upstanding bristles. A tongue cleaner takes form of an elongated, linear, flexible strip disposed in a cavity of the tubular handle portion. The strip has a proximal end attached to a movable retainer and a distal end connected to a finger puller which normally closed the open end of the handle portion whereby a finger puller is used to pull out the strip from the handle portion for tongue cleaning and push back the strip into the handle portion when tongue cleaning is complete.

US Patent:

20140106525, Apr 17, 2014

Filed:

Dec 13, 2013

Appl. No.:

14/106281

Inventors:

- Plano TX, US
Sanghyun Lee - Davis CA, US
Masaaki Higashitani - Cupertino CA, US
Tuan Pham - San Jose CA, US

Assignee:

SanDisk Technologies Inc. - Plano TX

International Classification:

H01L 29/66

US Classification:

438257

Abstract:

Non-volatile storage elements having a PN floating gate are disclosed herein. The floating gate may have a P− region near the tunnel oxide, and may have an N+ region near the control gate. In some embodiments, a P− region near the tunnel oxide helps provide good data retention. In some embodiments, an N+ region near the control gate helps to achieve a good coupling ratio between the control gate and floating gate. Therefore, programming of non-volatile storage elements is efficient. Also erasing the non-volatile storage elements may be efficient. In some embodiments, having a P− region near the tunnel oxide (as opposed to a strongly doped p-type semiconductor) may improve erase efficiency relative to P+.

US Patent:

20080310097, Dec 18, 2008

Filed:

May 15, 2008

Appl. No.:

12/121613

Inventors:

David W. Sherrod - Tomball TX, US
Kevin B. Leigh - Houston TX, US
Jonathan E. JamesOu - Houston TX, US
Kurt A. Manweiler - Tomball TX, US
Joseph R. Allen - Houston TX, US
Tuan A. Pham - Sugarland TX, US

Assignee:

Hewlett-Packard Development Company, L.P. - Houston TX

International Classification:

H05K 7/20
G06F 1/16

US Classification:

361686, 361683, 361687

Abstract:

A blade device enclosure has a chassis configured to selectively house a plurality of configurations of full-high and half-high blade devices, an administrator module, and at least one input/output device. The blade device enclosure also has a printed circuit board including a passive high-speed midplane configured to electronically couple the blade devices to the administrator module and the at least one input/output device.