John M. White - Hayward CA, US Jeonghoon Oh - San Jose CA, US Tom K. Cho - Los Altos Hills CA, US Silja James - Mountain View CA, US Uday Pai - San Jose CA, US Oscar Lopez - Watsonville CA, US Alexander S. Polyak - San Jose CA, US
Assignee:
APPLIED MATERIALS,INC. - Santa Clara CA
International Classification:
H01L 21/683 F16M 11/00
US Classification:
414800, 24834601
Abstract:
Embodiments of a method and apparatus for processing large area substrates including a translational wear plate and/or bushing assembly are provided for reducing the stress on a lift pin used to space substrates from a substrate support in a processing or other type of chamber. In another embodiment, an apparatus for processing substrates includes processing chamber comprising a substrate support disposed in a chamber body. A bushing assembly is disposed in the substrate support. A lift pin is disposed through the bushing assembly. A wear plate is provided that is coupled to the chamber body and aligned with the lift pin. The wear plate is movable laterally relative to a centerline of the chamber body to accommodate lateral motion of the lift pin when contacting the wear plate.
Apparatus For Enabling Concentricity Of Plasma Dark Space
ALAN RITCHIE - Menlo Park CA, US DONNY YOUNG - Cupertino CA, US KEITH A. MILLER - Mountain View CA, US MUHAMMAD RASHEED - San Jose CA, US STEVE SANSONI - Livermore CA, US Uday Pai - San Jose CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
C23C 14/34
US Classification:
20429806, 20429811
Abstract:
In some embodiments, substrate processing apparatus may include a chamber body; a lid disposed atop the chamber body; a target assembly coupled to the lid, the target assembly including a target of material to be deposited on a substrate; an annular dark space shield having an inner wall disposed about an outer edge of the target; a seal ring disposed adjacent to an outer edge of the dark space shield; and a support member coupled to the lid proximate an outer end of the support member and extending radially inward such that the support member supports the seal ring and the annular dark space shield, wherein the support member provides sufficient compression when coupled to the lid such that a seal is formed between the support member and the seal ring and the seal ring and the target assembly.
Process Kit Shield For Plasma Enhanced Processing Chamber
MUHAMMAD RASHEED - San Jose CA, US DONNY YOUNG - Cupertino CA, US KIRANKUMAR SAVANDAIAH - Bangalore, IN UDAY PAI - San Jose CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
C23C 16/44 C23C 16/50
US Classification:
118723 R, 118715, 118728
Abstract:
Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.
Substrate Processing System With Mechanically Floating Target Assembly
DONNY YOUNG - Cupertino CA, US ALAN RITCHIE - Menlo Park CA, US UDAY PAI - San Jose CA, US MUHAMMAD RASHEED - San Jose CA, US KEITH A. MILLER - Mountain View CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
C23C 14/34 C23C 14/35
US Classification:
20429806
Abstract:
Substrate processing systems are provided herein. In some embodiments, a substrate processing system may include a target assembly having a target comprising a source material to be deposited on a substrate; a grounding assembly disposed about the target assembly and having a first surface that is generally parallel to and opposite a backside of the target assembly; a support member coupled to the grounding assembly to support the target assembly within the grounding assembly; one or more insulators disposed between the backside of the target assembly and the first surface of the grounding assembly; and one or more biasing elements disposed between the first surface of the grounding assembly and the backside of the target assembly to bias the target assembly toward the support member.
Fabrication Of Piezoelectric Device With Pmnpt Layer
- Santa Clara CA, US Vijay Bhan Sharma - Rajasthan, IN Yuan Xue - Xi'an City, CN Uday Pai - San Jose CA, US Bharatwaj Ramakrishnan - San Jose CA, US Ankur Kadam - Thane, IN
A piezoelectric device includes a substrate, a thermal oxide layer on the substrate, a metal or metal oxide adhesion layer on the thermal oxide layer, a lower electrode on the metal oxide adhesion layer, a seed layer on the lower electrode, a lead magnesium niobate-lead titanate (PMNPT) piezoelectric layer on the seed layer, and an upper electrode on the PMNPT piezoelectric layer.
- Santa Clara CA, US SUNDARAPANDIAN REDDY - Bangalore, IN UDAY PAI - San Jose CA, US KIRANKUMAR SAVANDAIAH - Bangalore, IN THANH X. NGUYEN - San Jose CA, US MUHAMMAD M. RASHEED - San Jose CA, US JALLEPALLY RAVI - San Ramon CA, US
International Classification:
C23C 14/50 B25B 5/08
Abstract:
Embodiments of target retaining apparatus and substrate processing chambers incorporating same are provided herein. In some embodiments, a target retaining apparatus includes a housing including a first slot and a second slot; a cam movably disposed in the housing, wherein movement of the cam is constrained along the first slot; a retaining arm movably coupled to the cam, wherein movement of the retaining arm is constrained along the second slot; a linking member including a first end rotatably coupled to the cam and a second end rotatably coupled to the retaining arm; and a biasing element biasing the cam towards a first position in which the retaining arm extends away from the housing.
Physical Vapor Deposition (Pvd) Target Having Low Friction Pads
- Santa Clara CA, US UDAY PAI - San Jose CA, US WILLIAM FRUCHTERMAN - Santa Clara CA, US KEITH A. MILLER - Mountain View CA, US MUHAMMAD M. RASHEED - San Jose CA, US THANH X. NGUYEN - San Jose CA, US KIRANKUMAR SAVANDAIAH - Bangalore, IN
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
H01J 37/34
Abstract:
Embodiments of target assemblies for use in substrate processing chambers are provided herein. In some embodiments, a target assembly includes a plate comprising a first side including a central portion and a support portion; a target disposed on the central portion; a plurality of recesses formed in the support portion; and a plurality of pads partially disposed in the plurality of recesses.
Process Kit Shield For Plasma Enhanced Processing Chamber
- Santa Clara CA, US DONNY YOUNG - Cupertino CA, US KIRANKUMAR SAVANDAIAH - Bangalore, IN UDAY PAI - San Jose CA, US
Assignee:
APPLIED MATERIALS, INC. - Santa Clara CA
International Classification:
C23C 16/44 C23C 14/34
US Classification:
118728, 118715, 20429811
Abstract:
Apparatus for processing substrates is disclosed herein. In some embodiments, an apparatus includes a first shield having a first end, a second end, and one or more first sidewalls disposed between the first and second ends, wherein the first end is configured to interface with a first support member of a process chamber to support the first shield in a position such that the one or more first sidewalls surround a first volume of the process chamber; and a second shield having a first end, a second end, and one or more second sidewalls disposed between the first and second ends of the second shield and about the first shield, wherein the first end of the second shield is configured to interface with a second support member of the process chamber to support the second shield such that the second shield contacts the first shield to form a seal therebetween.