Vinh B Hoang

US Patent:

20230062048, Mar 2, 2023

Filed:

Aug 25, 2021

Appl. No.:

17/412159

Inventors:

- San Jose CA, US
Richard GALBRAITH - Rochester MN, US
Henry YIP - Bellflower CA, US
Vinh HOANG - Laguna Hills CA, US

International Classification:

G06F 3/06

Abstract:

A data storage device includes a memory device including a plurality of wordlines, each wordline having a plurality of cells, and a cell statistics generator (CSG) disposed on the memory device. The CSG includes logic configured to receive a plurality of left read senses and a plurality of right read senses for the plurality of cells of a wordline, determine a plurality of first windows and a plurality of second windows, determine a left window sum and a right window sum, determine a deviation parameter and a dispersion parameter based on the left window sum and the right window sum, and determine one or more characteristics of the plurality of cells based on the deviation parameter and the dispersion parameter. The deviation parameter and the dispersion parameter are used to describe a number of errors of the left read sense and the right read sense.

US Patent:

20230063666, Mar 2, 2023

Filed:

Aug 25, 2021

Appl. No.:

17/412161

Inventors:

- San Jose CA, US
Richard GALBRAITH - Rochester MN, US
Henry YIP - Bellflower CA, US
Vinh HOANG - Laguna Hills CA, US

International Classification:

G11C 29/12
G11C 29/20
G11C 7/06

Abstract:

A non-volatile memory device includes a plurality of wordlines, each comprising a plurality of cells, a hard decode configured to read each cell of the plurality of cells at a hard decode voltage, a left read sense configured to read voltage values of each cell to the left of the hard decode voltage at a left read sense voltage, a right read sense configured to read voltage values of each cell to the right of the hard decode voltage at a right read sense voltage, a first combiner configured to determine a difference of voltage values read by the left read sense and right read sense to produce a dispersion signal, and a second combiner configured to determine a sum of the voltage values read by the left read sense and right read sense to produce a deviation signal.

US Patent:

20230066469, Mar 2, 2023

Filed:

Aug 25, 2021

Appl. No.:

17/412158

Inventors:

- San Jose CA, US
Richard GALBRAITH - Rochester MN, US
Henry YIP - Bellflower CA, US
Vinh HOANG - Laguna Hills CA, US

International Classification:

G06F 3/06

Abstract:

A data storage device includes a memory device including a plurality of wordlines, each including a plurality of cells, and a cell statistics generator (CSG) disposed on the memory device. The CSG includes logic configured to receive a first read sense at a threshold voltage of one or more threshold voltages of each cell of a wordline of the plurality of wordlines, determine that a second read sense is required based on the first read sense, receive the second read sense, determine a deviation parameter and a dispersion parameter for an asymmetric adjustment of the left threshold voltage and the right threshold voltage, and adjust the left threshold voltage and the right threshold voltage based on the deviation parameter and the dispersion parameter. The second read sense includes a plurality of left read senses at a left threshold voltage and a plurality of right senses at a right threshold voltage.