Virginia Robbins

US Patent:

7951422, May 31, 2011

Filed:

Dec 20, 2006

Appl. No.:

11/641939

Inventors:

Yaoling Pan - Union City CA, US
Xiangfeng Duan - Mountain View CA, US
Robert S. Dubrow - San Carlos CA, US
Jay Goldman - Mountain View CA, US
Shahriar Mostarshed - San Mateo CA, US
Chunming Niu - Palo Alto CA, US
Linda T. Romano - Sunnyvale CA, US
David P. Stumbo - Belmont CA, US
Alice Fischer-Colbrie - Redwood City CA, US
Vijendra Sahi - Menlo Park CA, US
Virginia Robbins - Los Gatos CA, US

Assignee:

Nanosys, Inc. - Palo Alto CA

International Classification:

C23C 16/00

US Classification:

4272481, 427250, 427252

Abstract:

The present invention is directed to systems and methods for nanowire growth and harvesting. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial oriented nanowire growth using a combination of silicon precursors, as well as us of patterned substrates to grow oriented nanowires. In a further aspect of the invention, methods to improve nanowire quality through the use of sacrifical growth layers are provided. In another aspect of the invention, methods for transferring nanowires from one substrate to another substrate are provided.