Vitali Souchkov - Walnut Creek CA, US Vladimir Faifer - San Jose CA, US Victor Huang - San Jose CA, US Eugene Fukshansky - Mountain View CA, US Alexander Artjomov - Moscow Region, RU Anatoli Skljarnov - Moscow, RU
Assignee:
Ahbee 2, L.P., A California Limited Partnership - San Jose CA
International Classification:
G01R 31/26
US Classification:
324765
Abstract:
The invention relates to metrology of thin dielectric layers on semiconductor wafers, interfaces of dielectric layers to the wafer substrates and substrates properties of semiconductor wafers. The invention allows measurement of the metrology data for thin dielectric layers on semiconductor wafers electrically via using contact electrodes that align their contact surface to the wafer surface locally at the measurement sites.
Warm Ac Biasing In Tes Microcalorimeter Readout Via Transformer
Prospective readout architecture with Transition Edge Sensor (TES) electrical biasing from the warm readout is introduced. The architecture allows building of large imaging detector arrays with TES. The invention allows an unprecedented combination of imaging and spectrometry features in one radiation detector.
Compact And Accurate Analog Memory For Cmos Imaging Pixel Detectors
An analog memory circuit, i. e. a sample and hold circuit, wherein the source and the gate of the switching transistor is maintained at a same potential prior and after the sampling process using a transistor circuitry. The analog memory circuit comprises a memory capacitor () connected at a first end to a first port (), which is connected a reference potential (). A drain of a first transistor () —switch transistor—is connected to a second end of the memory capacitor (). A source of the first transistor () is connected to a second port (), which is connected to circuitry () for providing an input signal for storage in the memory capacitor (), and a gate of the first transistor () is connected to a third port (), which is connected to a first current sink (). A source of a second transistor () is connected to the source of the first transistor () and a drain of the second transistor () is connected to the gate of the first transistor (). The source of the first transistor () is connected to a source of a third transistor ().
Light Sensor With Intensity And Direction Detection
Vitali Souchkov - Walnut Creek CA, US Rob Van Dalen - Bergeijk, NL
Assignee:
NXP B.V. - Eindhoven
International Classification:
G01B 11/26 G01J 1/42
US Classification:
3561412, 356218
Abstract:
A light sensor and light sensing system to detect an intensity of incident light and an angle of incidence of the incident light. The light sensor includes a dielectric layer, a plurality of photo detectors coupled relative to the dielectric layer, and a plurality of stacks of opaque slats embedded within the dielectric layer. The dielectric layer is substantially transparent to the incident light. The photo detectors detect the incident light through the dielectric layer. The stacks of opaque slats are approximately parallel to an interface between the dielectric layer and the photo detectors. The stacks of opaque slats define light apertures between adjacent stacks of opaque slats. At least some of the stacks of opaque slats are arranged at a non-zero angle relative to other stacks of the opaque slats.
Capacitive Touchscreen Signal Acquisition Without Panel Reset
PixArt Imaging Inc. - Science-Based Industrial Park, Hsin-Chu
International Classification:
G06F 3/041
US Classification:
345173
Abstract:
Various embodiments of readout circuits are disclosed where no touchscreen or touch panel recharge is required, and the amount of time available for signal acquisition is twice that relative to prior art touchscreen or touch panel readout circuits. Voltage offsets of the integrating amplifiers may be compensated for by notch filtering signals stored in readout circuit capacitors. Some embodiments of readout circuits disclosed herein permit large dynamic range capacitive touchscreen or touch panel signals to be processed, and do not require panel reset. Readout circuits are disclosed that permit doubling of the signal acquisition rate and pre-filtering of acquired touch panel signals for improved immunity from harmonic EMI. Signal acquisition and temporary storage may be carried out using the same capacitors in such readout circuits.
Low Voltage Capacitive Touchscreen Charge Acquisition And Readout Systems, Circuits And Methods For High System Noise Immunity
Various embodiments of capacitive touchscreen driving and sensing circuits are disclosed, where during a first phase the mutual capacitance between a given drive electrode and a given sense electrode is charged up to a first charge value corresponding substantially to a drive voltage times the mutual capacitance. During a second phase the charge storage capacitor is charged up to a value corresponding approximately to a difference in touchscreen capacitance network charges occurring during the first and second phases. The first and second phases do not overlap in time. Dark frame signals may also be acquired from the touchscreen to calibrate differences in touchscreen capacitance network charges.
Systems, Devices And Methods For Capacitor Mismatch Error Averaging In Pipeline Analog-To-Digital Converters
Various embodiments of methods and devices for reducing capacitor mismatch errors in a pipeline analog-to-digital converter (ADC) are disclosed, where in a pipeline element circuit and during a first phase, an input voltage provided by a sample-and-hold circuit is presented to first and second capacitors arranged in parallel in the pipeline element circuit. During a second phase, a second voltage corresponding to a second charge associated with the second capacitance is amplified and stored in the pipeline element circuit. During a third phase, the same input voltage of the first phase is again presented to the first and second capacitors, which are arranged in parallel in the pipeline element circuit. During a fourth phase a first voltage corresponding to the first charge is amplified and stored in the pipeline element circuit. After the first, second, third and fourth phases have been completed, digital representations of the first and second voltages are sent though corresponding registers for subsequent averaging along with digital representations of first and second voltages provided by other pipeline element circuits to produce a digital capacitor mismatch error corrected output.
Charge Pump Frequency Selection In Touch Screen Sensor Interface System
Abhay Kumar Rai - Fort Collins CO, US Vitali Souchkov - Walnut Creek CA, US Jeffrey Stone - Fort Collins CO, US
Assignee:
Pixart Imaging, Inc. - Hsin-Chu
International Classification:
G06F 3/045
US Classification:
345174, 345173
Abstract:
Various embodiments of charge pump circuitry configured to generate output signals having first distortion signals superimposed thereon are disclosed. Demodulator input signals are also disclosed that have second distortion signals superimposed thereon. A synchronization signal is delivered to demodulator circuitry through at least first and second integer divider circuits and to charge pump circuitry through at least the first integer divider circuitry such that the first and second distortion signals have frequencies that are integer divisions of the synchronization frequency.
Youtube
Vitali "Chaconne" for Violin & Piano | Ray Ch...
Live concert in Brisbane, Australia on 11th August, 2018 Celebrating 7...
Duration:
10m 27s
Vitali Klitschko (Ukraine) vs Derek Chisora (...
Professional ukrainian heavyweight boxer Vitali Klitschko with nicknam...
Duration:
9m 47s
Vitali Klitschko (Ukraine) vs Chris Arreola (...
Professional ukrainian heavyweight boxer Vitali Klitschko with nicknam...
Duration:
44m 42s
When Vitali Klitschko Punished for Insolence
We already knew that Klitschko, even at 40, was a dominant heavyweight...
Duration:
8m 29s
Vitali Klitschko (Ukraine) vs Odlanier Solis ...
Professional ukrainian heavyweight boxer Vitali Klitschko with nicknam...
Duration:
8m 16s
Vitali Klitschko vs Obed Sullivan - Showtime ...
Vitali Klitschko makes his US TV debut defending his WBO Heavyweight T...