Vu T Tran

US Patent:

7615482, Nov 10, 2009

Filed:

Mar 23, 2007

Appl. No.:

11/690248

Inventors:

Daniel C. Edelstein - White Plains NY, US
Alexandros Demos - Dublin CA, US
Stephen M. Gates - Ossining NY, US
Alfred Grill - White Plains NY, US
Steven E. Molis - Patterson NY, US
Vu Ngoc Tran Nguyen - San Jose CA, US
Steven Reiter - Santa Clara CA, US
Darryl D. Restaino - Modena NY, US
Kang Sub Yim - Santa Clara CA, US

Assignee:

International Business Machines Corporation - Armonk NY
Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/4763

US Classification:

438627, 257751, 257E23141, 257E21495, 257E21023, 257E21246, 257E21486, 257701, 257704, 257707, 216 41, 216 42, 216 49, 438736, 428201

Abstract:

Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.

US Patent:

20230102606, Mar 30, 2023

Filed:

Sep 30, 2021

Appl. No.:

17/449564

Inventors:

- SANTA MONICA CA, US
Sophia Dominguez - New York NY, US
Vu Tran - Bellevue WA, US

International Classification:

H04L 29/06
G06F 16/27

Abstract:

A system to perform operations that include: minting a Non-Fungible Token (NFT) that comprises a media object and mutable metadata; allocating the NFT to a user of a client device; granting the user of the client device a permission to change the mutable metadata of the NFT based on the allocating the NFT to the user of the client device; generating an open-edition of the NFT, the open-edition of the NFT comprising a reference to the mutable metadata; receiving a change to the mutable metadata from the user of the client device; and updating the open-edition of the NFT based on the change.

US Patent:

20200227258, Jul 16, 2020

Filed:

Oct 9, 2019

Appl. No.:

16/597466

Inventors:

- Santa Clara CA, US
Ganesh BALASUBRAMANIAN - Fremont CA, US
Arkajit ROY BARMAN - Singapore, SG
Hidehiro KOJIRI - Sunnyvale CA, US
Xinhai HAN - Santa Clara CA, US
Deenesh PADHI - Sunnyvale CA, US
Chuan Ying WANG - Sunnyvale CA, US
Yue CHEN - Sunnyvale CA, US
Daemian Raj BENJAMIN RAJ - Fremont CA, US
Nikhil Sudhindrarao JORAPUR - Sunnyvale CA, US
Vu Ngoc Tran NGUYEN - Santa Clara CA, US
Miguel S. FUNG - Sunnyvale CA, US
Jose Angelo OLAVE - Angeles, PH
Thian Choi LIM - Singapore, SG

International Classification:

H01L 21/02
H01L 21/67

Abstract:

A method of forming a film stack with reduced defects is provided and includes positioning a substrate on a substrate support within a processing chamber and sequentially depositing polysilicon layers and silicon oxide layers to produce the film stack on the substrate. The method also includes supplying a current of greater than 5 ampere (A) to a plasma profile modulator while generating a deposition plasma within the processing chamber, exposing the substrate to the deposition plasma while depositing the polysilicon layers and the silicon oxide layers, and maintaining the processing chamber at a pressure of greater than 2 Torr to about 100 Torr while depositing the polysilicon layers and the silicon oxide layers.

US Patent:

20160017492, Jan 21, 2016

Filed:

Jul 16, 2015

Appl. No.:

14/801348

Inventors:

- Santa Clara CA, US
Alexandros T. DEMOS - Fremont CA, US
Vu Ngoc Tran NGUYEN - Santa Clara CA, US
Kelvin CHAN - San Ramon CA, US
He REN - San Jose CA, US
Kang Sub YIM - Palo Alto CA, US
Mehul B. NAIK - San Jose CA, US

International Classification:

C23C 16/48
C23C 16/40
C23C 16/505
B01J 19/12

Abstract:

Embodiments described herein provide a method for sealing a porous low-k dielectric film. The method includes forming a sealing layer on the porous low-k dielectric film using a cyclic process. The cyclic process includes repeating a sequence of depositing a sealing layer on the porous low-k dielectric film and treating the sealing layer until the sealing layer achieves a predetermined thickness. The treating of each intermediate sealing layer generates more reactive sites on the surface of each intermediate sealing layer, which improves the quality of the resulting sealing layer.