Vu N Tran

US Patent:

7615482, Nov 10, 2009

Filed:

Mar 23, 2007

Appl. No.:

11/690248

Inventors:

Daniel C. Edelstein - White Plains NY, US
Alexandros Demos - Dublin CA, US
Stephen M. Gates - Ossining NY, US
Alfred Grill - White Plains NY, US
Steven E. Molis - Patterson NY, US
Vu Ngoc Tran Nguyen - San Jose CA, US
Steven Reiter - Santa Clara CA, US
Darryl D. Restaino - Modena NY, US
Kang Sub Yim - Santa Clara CA, US

Assignee:

International Business Machines Corporation - Armonk NY
Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/4763

US Classification:

438627, 257751, 257E23141, 257E21495, 257E21023, 257E21246, 257E21486, 257701, 257704, 257707, 216 41, 216 42, 216 49, 438736, 428201

Abstract:

Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.

US Patent:

20100009161, Jan 14, 2010

Filed:

Aug 27, 2009

Appl. No.:

12/548487

Inventors:

Daniel C. Edelstein - Yorktown Heights NY, US
Alexandros Demos - Dublin CA, US
Stephen M. Gates - Hopewell Junction NY, US
Alfred Grill - Yorktown Heights NY, US
Steven E. Molis - Patterson NY, US
Vu Ngoc Tran Nguyen - San Jose CA, US
Steven Reiter - Santa Clara CA, US
Darryl D. Restaino - Hopewell Junction NY, US
Kang Sub Yim - Santa Clara CA, US

Assignee:

INTERNATIONAL BUSINESS MACHINES CORPORATION - Armonk NY
APPLIED MATERIALS, INC. - Santa Clara CA

International Classification:

B32B 5/14

US Classification:

4283105

Abstract:

Disclosed is a structure and method for forming a structure including a SiCOH layer having increased mechanical strength. The structure includes a substrate having a layer of dielectric or conductive material, a layer of oxide on the layer of dielectric or conductive material, the oxide layer having essentially no carbon, a graded transition layer on the oxide layer, the graded transition layer having essentially no carbon at the interface with the oxide layer and gradually increasing carbon towards a porous SiCOH layer, and a porous SiCOH (pSiCOH) layer on the graded transition layer, the porous pSiCOH layer having an homogeneous composition throughout the layer. The method includes a process wherein in the graded transition layer, there are no peaks in the carbon concentration and no dips in the oxygen concentration.

US Patent:

20210132509, May 6, 2021

Filed:

Apr 3, 2019

Appl. No.:

17/049707

Inventors:

- Veldhoven, NL
Yuxiang LIN - Wilton CT, US
Vu Quang TRAN - Norwalk CT, US
Sebastianus Adrianus GOORDEN - Eindhoven, NL
Justin Lloyd KREUZER - Trumbull CT, US
Christopher John MASON - Newtown CT, US
Igor Matheus Petronella AARTS - Port Chester NY, US
Krishanu SHOME - Cheshire CT, US
Irit TZEMAH - Norwalk CT, US

Assignee:

ASML Netherlands B.V. - Veldhoven
ASML Holding N.V. - Veldhoven

International Classification:

G03F 7/20
G03F 9/00

Abstract:

An alignment sensor apparatus includes an illumination system, a first optical system, a second optical system, a detector system, and a processor. The illumination system is configured to transmit an illumination beam along an illumination path. The first optical system is configured to transmit the illumination beam toward a diffraction target on a substrate. The second optical system includes a first polarizing optic configured to separate and transmit an irradiance distribution. The detector system is configured to measure a center of gravity of the diffraction target based on the irradiance distribution outputted from a first polarization branch and a second polarization branch. The processor is configured to measure a shift in the center of gravity of the diffraction target caused by an asymmetry variation in the diffraction target and determine a sensor response function of the alignment sensor apparatus based on the center of gravity shift.