Wei Lee

US Patent:

7857947, Dec 28, 2010

Filed:

Jul 24, 2006

Appl. No.:

11/459531

Inventors:

Alan A. Ritchie - Pleasanton CA, US
Wei Ti Lee - San Jose CA, US
Ted Guo - Palo Alto CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 14/34
C23C 16/00

US Classification:

20419215, 20419212, 427250

Abstract:

Blocker plates for chemical vapor deposition chambers and methods of treating blocker plates are provided. The blocker plates define a plurality of holes therethrough and have an upper surface and a lower surface that are at least about 99. 5% pure, which minimizes the nucleation of contaminating particles on the blocker plates. A physically vapor deposited coating, such as an aluminum physically vapor deposited coating, may be formed on the upper and lower surfaces of the blocker plates. Chemical vapor deposition chambers including blocker plates having a physically vapor deposited coating thereon are also provided.

US Patent:

8637390, Jan 28, 2014

Filed:

May 26, 2011

Appl. No.:

13/116794

Inventors:

Seshadri Ganguli - Sunnyvale CA, US
Sang Ho Yu - Cupertino CA, US
Wei Ti Lee - San Jose CA, US
Hoon Kim - San Jose CA, US
Srinivas Gandikota - Santa Clara CA, US
Yu Lei - San Jose CA, US
Kevin Moraes - Fremont CA, US
Xianmin Tang - San Jose CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/4763

US Classification:

438591, 438592

Abstract:

Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode.

US Patent:

20030196680, Oct 23, 2003

Filed:

Apr 19, 2002

Appl. No.:

10/126919

Inventors:

Chung Lee - Fremont CA, US
Oanh Nguyen - Union City CA, US
Wei Shiang Lee - Milpitas CA, US
Michael Solomensky - Fremont CA, US
Atul Kumar - Fremont CA, US
James Chang - Cupertino CA, US
Binh Nguyen - Cupertino CA, US

Assignee:

DIELECTRIC SYSTEMS, INC - Freemont CA

International Classification:

C23C016/00
C25F001/00

US Classification:

134/001100, 118/719000, 118/726000, 438/905000

Abstract:

A Process Module (“PM”) is designed to facilitate Transport Polymerization (“TP”) of precursors that are useful for preparations of low Dielectric Constant (“∈”) films. The PM consists primarily of a Material Delivery System (“MDS”) with a high temperature Vapor Phase Controller (“VFC”), a TP Reactor, a Treatment Chamber, a Deposition Chamber and a Pumping System. The PM is designed to facilitate TP for new precursors and for film deposition and stabilization processes.

US Patent:

20050047927, Mar 3, 2005

Filed:

Apr 7, 2004

Appl. No.:

10/820447

Inventors:

Chung Lee - Fremont CA, US
Oanh Nguyen - Union City CA, US
Wei Lee - Milpitas CA, US
Michael Solomensky - Fremont CA, US
Atul Kumar - Fremont CA, US
James Chung Chang - Cupertino CA, US
Binh Nguyen - Cupertino CA, US

International Classification:

F04B001/00

US Classification:

417152000, 417053000

Abstract:

A Process Module (“PM”) is designed to facilitate Transport Polymerization (“TP”) of precursors that are useful for preparations of low Dielectric Constant (“∈”) films. The PM consists primarily of a Material Delivery System (“MDS”) with a high temperature Vapor Phase Controller (“VFC”), a TP Reactor, a Treatment Chamber, a Deposition Chamber and a Pumping System. The PM is designed to facilitate TP for new precursors and for film deposition and stabilization processes.

US Patent:

20230021209, Jan 19, 2023

Filed:

May 30, 2022

Appl. No.:

17/804599

Inventors:

- Santa Clara CA, US
Kavita SHAH - Mountain View CA, US
Wei T LEE - San Jose CA, US

Assignee:

NOVA MEASURING INSTRUMENTS INC. - Santa Clara CA

International Classification:

G01N 23/2273
H01L 21/67
C23C 16/52
C23C 16/24
C23C 16/455
C23C 16/06

Abstract:

XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

US Patent:

20210025839, Jan 28, 2021

Filed:

Oct 9, 2020

Appl. No.:

16/949041

Inventors:

- Santa Clara CA, US
Kavita Shah - Mountain View CA, US
Wei Ti Lee - San Jose CA, US

International Classification:

G01N 23/2273
H01L 21/67
C23C 16/52
C23C 16/24
C23C 16/455
C23C 16/06

Abstract:

XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

US Patent:

20190277783, Sep 12, 2019

Filed:

Mar 12, 2019

Appl. No.:

16/351153

Inventors:

- Santa Clara CA, US
Kavita Shah - Mountain View CA, US
Wei Ti Lee - San Jose CA, US

International Classification:

G01N 23/2273
H01L 21/67
C23C 16/06
C23C 16/24
C23C 16/455
C23C 16/52

Abstract:

XPS spectra are used to analyze and monitor various steps in the selective deposition process. A goodness of passivation value is derived to analyze and quantify the quality of the passivation step. A selectivity figure of merit value is derived to analyze and quantify the selectivity of the deposition process, especially for selective deposition in the presence of passivation. A ratio of the selectivity figure of merit to maximum selectivity value can also be used to characterize and monitor the deposition process.

US Patent:

20170176357, Jun 22, 2017

Filed:

Mar 9, 2017

Appl. No.:

15/454950

Inventors:

Heath A. Pois - Fremont CA, US
Wei Ti Lee - San Jose CA, US

International Classification:

G01N 23/22
G01N 23/223
G01N 23/227
G01B 15/02

Abstract:

Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.