Wei I Tang

US Patent:

20130115383, May 9, 2013

Filed:

Nov 6, 2012

Appl. No.:

13/669571

Inventors:

Xinliang Lu - Fremont CA, US
David Thompson - San Jose CA, US
Jeffrey W. Anthis - San Jose CA, US
Mei Chang - Saratoga CA, US
Seshadri Ganguli - Sunnyvale CA, US
Wei Tang - Santa Clara CA, US
Srinivas Gandikota - Santa Clara CA, US
Atif Noori - Saratoga CA, US

International Classification:

C23C 16/455

US Classification:

427535, 4272481, 427250

Abstract:

Provided are methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by:wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR′)or Ta(NR′), wherein R′ is an alkyl, alkenyl, alkynyl, keto or aldehyde group.

US Patent:

20130157460, Jun 20, 2013

Filed:

Dec 14, 2012

Appl. No.:

13/714588

Inventors:

Xinyu Fu - Pleasanton CA, US
Wei Tang - Santa Clara CA, US
Kavita Shah - Mountain View CA, US
Srinivas Gandikota - Santa Clara CA, US
San H. Yu - Cupertino CA, US
Avgerinos Gelatos - Redwood City CA, US

International Classification:

H01L 29/40

US Classification:

438660

Abstract:

Methods for annealing a contact metal layer for a metal silicidation process are provided in the present invention. In one embodiment, a method for annealing a contact metal layer for a silicidation process in a semiconductor device includes providing a substrate having a contact metal layer disposed thereon in a thermal annealing processing chamber, providing a heat energy to the contact metal layer in the thermal processing chamber, supplying a gas mixture including a nitrogen gas and a hydrogen gas while providing the heat energy to the contact layer in the thermal processing chamber, wherein the nitrogen gas and the hydrogen gas is supplied at a ratio between about 1:10 and about 1:1, and forming a metal silicide layer on the substrate.

US Patent:

20130221445, Aug 29, 2013

Filed:

Feb 20, 2013

Appl. No.:

13/771236

Inventors:

Yu Lei - Foster City CA, US
Srinivas Gandikota - Santa Clara CA, US
Xinyu Fu - Fremont CA, US
Wei Tang - Santa Clara CA, US
Atif Noori - Saratoga CA, US

International Classification:

H01L 21/28
H01L 29/49

US Classification:

257368, 438592

Abstract:

Provided are devices and methods utilizing TiN and/or TaN films doped with Si, Al, Ga, Ge, In and/or Hf. Such films may be used as a high-k dielectric cap layer, PMOS work function layer, aluminum barrier layer, and/or fluorine barrier. These TiSiN, TaSiN, TiAlN, TaAlN, TiGaN, TaGaN, TiGeN, TaGeN, TiInN, TaInN, TiHfN or TaHfN films can be used where TiN and/or TaN films are traditionally used, or they may be used in conjunction with TiN and/or TaN.

US Patent:

20130295759, Nov 7, 2013

Filed:

Apr 18, 2013

Appl. No.:

13/865285

Inventors:

Xinliang Lu - Fremont CA, US
Seshadri Ganguli - Sunnyvale CA, US
Atif Noori - Saratoga CA, US
Maitreyee Mahajani - Saratoga CA, US
Shih Chung Chen - Cupertino CA, US
Yu Lei - Foster City CA, US
Xinyu Fu - Fremont CA, US
Wei Tang - Santa Clara CA, US
Srinivas Gandikota - Santa Clara CA, US

International Classification:

H01L 29/66

US Classification:

438591

Abstract:

Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.

US Patent:

20140017408, Jan 16, 2014

Filed:

Jun 28, 2013

Appl. No.:

13/930194

Inventors:

Srinivas Gandikota - Santa Clara CA, US
Xinliang Lu - Fremont CA, US
Shih Chung Chen - Cupertino CA, US
Wei Tang - Santa Clara CA, US
Jing Zhou - Milpitas CA, US
Seshadri Ganguli - Sunnyvale CA, US
David Thompson - San Jose CA, US
Jeffrey W. Anthis - San Jose CA, US
Atif Noori - Saratoga CA, US
Faruk Gungor - San Jose CA, US
Dien-Yeh Wu - San Jose CA, US
Mei Chang - Saratoga CA, US
Xinyu Fu - Fremont CA, US
Yu Lei - Foster City CA, US

International Classification:

C23C 18/00

US Classification:

427343

Abstract:

Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl, TaCland HfClto provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)AlH], wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.

US Patent:

20220389585, Dec 8, 2022

Filed:

Aug 17, 2022

Appl. No.:

17/889930

Inventors:

- Santa Clara CA, US
Muhammad M. Rasheed - San Jose CA, US
Mario D. Sanchez - San Jose CA, US
Srinivas Gandikota - Santa Clara CA, US
Wei V. Tang - Santa Clara CA, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 16/455
C23C 16/52
C23C 16/50

Abstract:

Process chamber lids, processing chambers and methods using the lids are described. The lid includes a pumping liner with a showerhead, blocker plate and gas funnel positioned therein. A liner heater is positioned on the pumping liner to control temperature in the pumping liner. Gas is flowed into the gas funnel using a dead-volume free one-way valve with a remote plasma source.

US Patent:

20220246471, Aug 4, 2022

Filed:

Apr 14, 2022

Appl. No.:

17/720836

Inventors:

- Santa Clara CA, US
Dien-Yeh Wu - San Jose CA, US
Wei V. Tang - Santa Clara CA, US
Yixiong Yang - Fremont CA, US
Bo Wang - Chandler AZ, US

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 21/768
C23C 16/02
C23C 16/455
C23C 16/458
H01L 21/285
H01L 21/687
H01L 23/532

Abstract:

Process chamber lid assemblies and process chambers comprising same are described. The lid assembly has a housing with a gas dispersion channel in fluid communication with a lid plate. A contoured bottom surface of the lid plate defines a gap to a top surface of a gas distribution plate. A pumping channel is formed between an upper outer peripheral contour of the gas distribution plate and the lid plate.

US Patent:

20230061949, Mar 2, 2023

Filed:

Nov 4, 2022

Appl. No.:

17/981285

Inventors:

- Mountain View CA, US
Peter E. Kirkpatrick - Los Altos CA, US
Gordon James Coleman - Los Altos CA, US
Wei Tang - Sunnyvale CA, US
John Roper - Mountain View CA, US

International Classification:

G06F 3/06
G06F 12/06

Abstract:

A command to relocate data is transmitted by a storage controller. The command includes first address information associated with a first set of blocks storing the data at one or more storage devices using a first programming mode and second address information associated with a second set of blocks at the one or more storage devices to store the relocated data using a second programming mode. The command causes the relocation of the data from the first set of blocks to the second set of blocks while bypassing sending the data to the storage controller. An acknowledgement is received that the relocated data has been stored at the second number of blocks.