William F Armstrong

US Patent:

8164159, Apr 24, 2012

Filed:

Jul 16, 2010

Appl. No.:

12/838158

Inventors:

William Eddie Armstrong - Redwood City CA, US
Michael Shannon McCorquodale - Ann Arbor MI, US
Justin O'Day - Detroit MI, US
Nader Fayyaz - Kitchener, CA
Gordon Carichner - Saline MI, US

Assignee:

Intergrated Device Technologies, inc. - San Jose CA

International Classification:

H01L 29/86

US Classification:

257531, 438454, 438381, 257E21022, 257659

Abstract:

A reference signal generator includes an integrated circuit substrate having a semiconductor resonator therein. The resonator includes an inductor extending adjacent a first surface of the integrated circuit substrate. A vertically-stacked composite of at least first and second electrically insulating dielectric layers is provided on the integrated circuit substrate. The vertically-stacked composite covers a portion of the first surface, which extends opposite the inductor. A first electrically conductive shielding layer is provided on a portion of the second electrically insulating dielectric layer extending opposite the inductor. The first electrically conductive shielding layer may encapsulate exposed portions of the first and second electrically insulating dielectric layers. The shielding layer may operate as an electromagnetic shield between the inductor and an external structure, such as an integrated circuit package, and also shield against environmental contamination (e. g. , external moisture penetration).

US Patent:

20050184794, Aug 25, 2005

Filed:

Feb 10, 2004

Appl. No.:

10/776354

Inventors:

William Armstrong - Redwood City CA, US
Theodore Myers - Los Altos CA, US

Assignee:

Summit Microelectronics, Inc. - San Jose CA

International Classification:

H03K003/01

US Classification:

327534000

Abstract:

Active back bias voltage, applied to wells of N-MOS and P-MOS transistors of a small geometry integrated circuit, is used to set the threshold voltages and leakage currents precisely in order to improve speed and at the same time control device sub-threshold leakage. The active back bias applies a voltage to the well of devices on the small geometry integrated circuit. The voltage with increases until the leakage current goes to a predetermined level. If the leakage increases with age, temperature, Vvoltage or other conditions the bias supply from the active back bias generator compensates.

US Patent:

20140268153, Sep 18, 2014

Filed:

Mar 14, 2014

Appl. No.:

14/214479

Inventors:

- San Jose CA, US
Danny Gonzales - Palo Alto CA, US
Xiantao Yan - Palo Alto CA, US
William E. Armstrong - Palo Alto CA, US

Assignee:

LedEngin Inc. - San Jose CA

International Classification:

G01J 3/46

US Classification:

356402

Abstract:

A method is provided for forming multiple-LED (light-emitting-diode) light emitters from a plurality of LEDs, wherein the number of LEDs in each emitter is an integer M. The method includes providing a plurality of LEDs, each of the LEDs characterized by a first parameter and a second parameter, which are related to color coordinates CIEx and CIEy in a chromaticity diagram. The method also includes determining first and second parameter Xand Yfor a target color. The method further includes, for all possible combinations of M LEDs out of the plurality of LEDs, determining a first group parameter and a second group parameter based on the first and second parameters for all of the M LEDs, and selecting a group of M LEDs whose first group parameter and second group parameter are closest to Xand Yas a candidate for forming a light emitter of M LEDs.