William Frank Banholzer

US Patent:

6692714, Feb 17, 2004

Filed:

Jan 8, 2003

Appl. No.:

10/338136

Inventors:

Suresh Shankarappa Vagarali - Columbus OH 43235
Steven William Webb - Worthington OH 43085
William Edwin Jackson - Cleveland OH 44112-6300
William Frank Banholzer - Niskayuna NY 12309
Thomas Richard Anthony - Schenectady NY 12309-2514
George Rene Kaplan - Rye Brook NY 10573

International Classification:

C01B 3106

US Classification:

423264, 423446

Abstract:

The present invention is directed to a method for changing the color of colored natural diamonds. The method includes placing a discolored natural diamond in a pressure-transmitting medium which is consolidated into a pill. Next, the pill is placed into a high pressure/high temperature (HP/HT) press at elevated pressure and elevated temperature for a time sufficient to improve the color of the diamond. The diamond may be exposed at elevated-pressure and elevated-temperature conditions within the graphite-stable region of the carbon-phase diagramâwithout significant graphitization of the diamond, or above the diamond-graphite equilibrium and within the diamond-stable region of the carbon-phase diagram. Finally, the diamond is recovered from said press. Colorless Type Ia and Type II diamonds may be made by this method.

US Patent:

7241434, Jul 10, 2007

Filed:

Aug 8, 2001

Appl. No.:

10/344249

Inventors:

Thomas R. Anthony - Schenectady NY, US
Yavuz Kadioglu - Clifton Park NY, US
Suresh S. Vagarali - Columbus OH, US
Steven W. Webb - Worthington OH, US
William E. Jackson - Solon OH, US
William F. Banholzer - Niskayuna NY, US
John K. Casey - Dublin, IE
Alan C. Smith - Dublin, IE

Assignee:

Bellataire International, LLC - Worthington OH

International Classification:

C01B 31/06

US Classification:

423446, 117929, 423264

Abstract:

The present invention is directed to a method for treating discolored natural diamond, especially Type IIa diamond and Type IaA/B diamond with nitrogen as predominantly B centers, for improving its color. The method includes preblocking and preshaping a discolored natural diamond to prevent its breakage in a high pressure/high temperature (HP/HT) press, placing said discolored natural diamond in a pressure transmitting medium which is consolidated into a pill. Next, the pill is placed into a HP/HT press at elevated pressure and elevated temperature within the graphite-stable or diamond-stable range of the carbon phase diagram for a time sufficient to improve the color of said diamond. Finally, the diamond is recovered from said press. Colorless and fancy colored diamonds can be made by this method.

US Patent:

7323156, Jan 29, 2008

Filed:

Dec 15, 2003

Appl. No.:

10/737541

Inventors:

Suresh Shankarappa Vagarali - Columbus OH, US
Steven William Webb - Worthington OH, US
William Edwin Jackson - Cleveland OH, US
William Frank Banholzer - Niskayuna NY, US
Thomas Richard Anthony - Schenectady NY, US
George Rene Kaplan - Rye Brook NY, US

Assignee:

Bellataire International, LLC - Worthington OH

International Classification:

C01B 31/06
B01J 3/08

US Classification:

423446, 423264, 125 3001

Abstract:

The present invention is directed to a method for changing the color of colored natural diamonds. The method includes placing a discolored natural diamond in a pressure-transmitting medium which is consolidated into a pill. Next, the pill is placed into a high pressure/high temperature (HP/HT) press at elevated pressure and elevated temperature for a time sufficient to improve the color of the diamond. The diamond may be exposed at elevated-pressure and elevated-temperature conditions within the graphite-stable region of the carbon-phase diagram—without significant graphitization of the diamond, or above the diamond-graphite equilibrium and within the diamond-stable region of the carbon-phase diagram. Finally, the diamond is recovered from said press. Colorless Type Ia and Type II diamonds may be made by this method.

US Patent:

20050249655, Nov 10, 2005

Filed:

Jun 13, 2005

Appl. No.:

11/151393

Inventors:

Suresh Vagarali - Columbus, IN
Steven Webb - Worthington, CA
William Jackson - Cleveland OH, US
William Banholzer - Niskayuna NY, US
Thomas Anthony - Schenectady NY, US
George Kaplan - Rye Brook NY, US

International Classification:

C01B031/06

US Classification:

423446000

Abstract:

A method for changing the color of colored Type I natural diamonds includes placing a Type I natural diamond into a high pressure/high temperature (HP/HT) press at elevated pressure and elevated temperature for a time sufficient to change or improve the color of the diamond.

US Patent:

20100243046, Sep 30, 2010

Filed:

Mar 23, 2010

Appl. No.:

12/729547

Inventors:

Marty W. Degroot - Midland MI, US
Rebekah K. Feist - Midland MI, US
Mark T. Bernius - Midland MI, US
William F. Banholzer - Freeland MI, US
Chung-Hei Yeung - Midland MI, US
Attiganal N. Sreeram - Midland MI, US

International Classification:

H01L 31/0216
H01L 31/18

US Classification:

136256, 438 80, 257E31119

Abstract:

Chalcogenide based photovoltaic devices cells with good resistance to environmental elements can be formed by direct low temperature deposition of inorganic barrier layers onto the film. A unique multilayer barrier can be formed in a single step when reactive sputtering of the silicon nitride onto an inorganic oxide top layer of the PV device.

US Patent:

51529300, Oct 6, 1992

Filed:

Feb 13, 1991

Appl. No.:

7/654697

Inventors:

Clifford L. Spiro - Niskayuna NY
William F. Banholzer - Scotia NY

Assignee:

General Electric Company - Schenectady NY

International Classification:

H01B 100
H01B 106
C08G 7500

US Classification:

252500

Abstract:

A carbon chalcogenide macromolecular composition prepared from carbon dichalcogenide and to a process for the preparation thereof. A carbon dichalcogenide, for example, carbon disulfide, in entrained in an inert gas, and the mixture formed therefrom is passed over a hot tungsten filament wherein carbon disulfide is degraded into fragments. The fragments are then deposited onto a surface of a non-reactive substrate. The deposited fragments recombine to form the macromolecular composition. A significant characteristic of the composition is its threshold voltage above which its electrical resistance drops precipitously. This characteristic also exhibits a unique temperature dependence. Dopants may be added to the composition to reduce the electrical resistance.

US Patent:

50453556, Sep 3, 1991

Filed:

Jun 28, 1990

Appl. No.:

7/545152

Inventors:

Clifford L. Spiro - Niskayuna NY
William F. Banholzer - Scotia NY

Assignee:

General Electric Company - Schenectady NY

International Classification:

C23C 1650

US Classification:

427249

Abstract:

A carbon chalcogenide macromolecular composition prepared from carbon dichalcogenide and to a process for the preparation thereof. A carbon dichalcogenide, for example, carbon disulfide, in entrained in an inert gas, and the mixture formed therefrom is passed over a hot tungsten filament wherein carbon disulfide is degraded into fragments. The fragments are then deposited onto a surface of a nonreactive substrate. The deposited fragments recombine to form the macromolecular composition. A significant characteristic of the composition is its threshold voltage above which its electrical resistance drops precipitously. This characteristic also exhibits a unique temperature dependence. Dopants may be added to the composition to reduce the electrical resistance.

US Patent:

56723954, Sep 30, 1997

Filed:

May 29, 1996

Appl. No.:

8/654815

Inventors:

Thomas R. Anthony - Schenectady NY
William F. Banholzer - Columbus OH
Clifford L. Spiro - Niskayuna NY
Steven W. Webb - Worthington OH
Bradley E. Williams - Worthington OH

Assignee:

General Electric Company - Pittsfield MA

International Classification:

B05D 300

US Classification:

427444

Abstract:

A method for treating as as-grown chemical vapor deposited (CVD) starting diamond film having stresses and containing voids, comprises the step of subjecting the diamond film to a temperature of above about 1000. degree. C. and a hydrostatic pressure of above about 3 kilobars.