William V Cordaro

US Patent:

39835456, Sep 28, 1976

Filed:

Jun 30, 1975

Appl. No.:

5/591988

Inventors:

William Cordaro - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G11C 1140
H03K 3281

US Classification:

340173FF

Abstract:

A monolithic random access memory having a plurality of groups of storage cells, each storage cell of each group being adapted to store an electrical manifestation of a binary 1, or an electrical manifestation of a binary 0, a sense latch for each of said groups of storage cells for controllably sensing the binary value 0 or 1 stored in any one of said storage cells included within the group of storage cells with which said sense latch is associated, each of said sense latches comprising: a first field effect transistor directly connected to each cell of a group of said storage cells, second, third, fourth and fifth field effect transistors respectively connected to said first field transistor and to each of the other ones of said second, third, fourth and fifth field effect transistors, means for controlling the conductivity of said first, second, third, fourth and fifth transistors on a selective basis, whereby a binary 1 or a binary 0 may be read from and restored to any predetermined cell in each group.

US Patent:

39835430, Sep 28, 1976

Filed:

Jun 30, 1975

Appl. No.:

5/591989

Inventors:

William Cordaro - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G11C 1140
H03K 3281

US Classification:

340173FF

Abstract:

Disclosed is a Read/Write Buffer circuit for a random access memory integrated circuit chip based upon complementary enhancement mode field effect transistor technology.