William V Guthrie

Address:

PO Box 540336, Greenacres, FL 33454

VIN:

1YVHP80C775M40828

Make:

MAZDA

Model:

MAZDA6

Year:

2007

US Patent:

7712268, May 11, 2010

Filed:

Jul 14, 2006

Appl. No.:

11/487222

Inventors:

William Guthrie - Wellington FL, US

International Classification:

E06B 3/26
E04B 1/00

US Classification:

52202, 52222, 5250602

Abstract:

A screen-type wind abatement system is provided for protecting openings, such as window and door openings, in buildings and other structures. Both openable and non-openable systems are disclosed. A openable system includes a first frame member anchored to the structure wall, a second frame member pivotally connected to the first frame member and having a screen mounting portion for receiving an edge of a screen and a retainer, and a snap-lock mechanism for removably connecting the first and second frame members, whereby the screen is sandwiched between the second frame and the retainer in covering relation with a window or door opening. The assembly is of heavy-duty construction to resist high impact forces caused by hurricane force winds and accompanying flying debris. The snap-lock mechanism allows for quick and simple installation and removal the second frame member. A fixed system is disclosed for non-openable installations.

US Patent:

20090107061, Apr 30, 2009

Filed:

Oct 30, 2008

Appl. No.:

12/261332

Inventors:

William Guthrie - Wellington FL, US

International Classification:

E06B 5/10
E06B 3/46
E06B 1/04

US Classification:

52207, 527413

Abstract:

A reinforcement system for installation on sliding glass doors and windows to reinforce those structures against storm force winds, such as those experienced during a hurricane. An elongate rigid member is affixed to interior portion of the sliding glass doorframe by threaded fasteners to provide increased structural integrity. The elongate rigid member comprises a generally hollow member formed of extruded aluminum having a length that is generally equal to the height of the interior side frame member of the sliding glass door. The elongate rigid member is preferably installed on the side frame member disposed generally at or near the center of the opening in a two-door installation. Additional members may be used for installations having more than two doors. Once installed, the elongate rigid member increases the structural integrity of the sliding glass door structure by increasing the ability of the door to withstand being blown inward (or outward) by storm force winds.

US Patent:

60202645, Feb 1, 2000

Filed:

Jan 31, 1997

Appl. No.:

8/792082

Inventors:

Naftali Eliahu Lustig - Croton On Hudson NY
William L. Guthrie - Saratoga CA
Thomas E. Sandwick - Hopewell Junction NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C23F 100

US Classification:

438692

Abstract:

In-line thickness measurement of a dielectric film layer on a surface of a workpiece subsequent to a polishing on a chemical-mechanical polishing machine in a polishing slurry is disclosed. The workpiece includes a given level of back-end-of-line (BEOL) structure including junctions. The measurement apparatus includes a platen and an electrode embedded within the platen. A positioning mechanism positions the workpiece above the electrode with the dielectric layer facing in a direction of the electrode. A slurry dam is used for maintaining a prescribed level of a conductive polishing slurry above the electrode, the prescribed level to ensure a desired slurry coverage of the workpiece. A capacitance sensor senses a system capacitance C in accordance with an RC equivalent circuit model, wherein the RC equivalent circuit includes a resistance R representative of the slurry and workpiece resistances and the system capacitance C representative of the dielectric material and junction capacitances. Lastly, a capacitance-to-thickness converter converts the sensed capacitance to a dielectric thickness in accordance with a prescribed system capacitance/optical thickness calibration, wherein the prescribed calibration corresponds to the given level of BEOL structure of the workpiece.

US Patent:

49541420, Sep 4, 1990

Filed:

Mar 7, 1989

Appl. No.:

7/285435

Inventors:

Jeffrey W. Carr - Fishkill NY
Lawrence D. David - Wappingers Falls NY
William L. Guthrie - Hopewell Junction NY
Frank B. Kaufman - Amawalk NY
William J. Patrick - Newburgh NY
Kenneth P. Rodbell - Poughkeepsie NY
Robert W. Pasco - Wappingers Falls NY
Anton Nenadic - Red Hook NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C09C 168

US Classification:

51309

Abstract:

Disclosed is a method of chem-mech polishing an electronic component substrate. The method includes the following steps; obtaining a substrate having at least two features thereon or therein which have a different etch rate with respect to a particular etchant; and contacting the substrate with a polishing pad while contacting the substrate with a slurry containing the etchant wherein the slurry includes abrasive particles, a transition metal chelated salt and a solvent for the salt. The chem-mech polishing causes the at least two features to be substantially coplanar. Also disclosed is the chem-mech polishing slurry.

US Patent:

53370155, Aug 9, 1994

Filed:

Jun 14, 1993

Appl. No.:

8/075628

Inventors:

Naftali E. Lustig - Croton on Hudson NY
Randall M. Feenstra - Mt. Kisco NY
William L. Guthrie - Hopewell Junction NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

G01R 2726

US Classification:

324671

Abstract:

An in-situ thickness monitoring/endpoint detection method and apparatus for chemical-mechanical polishing (CMP) of a dielectric layer on a top surface of a semiconductor wafer is disclosed. The apparatus comprises center and guard electrodes and associated electronic circuitry, including a high frequency, low voltage signal generating means, for converting a current which is inversely proportional to the dielectric layer thickness into a corresponding analog voltage. A position detection device triggers an analog-to-digital converter to convert the analog voltage into a digital signal while the wafer is located within a detection region as the wafer is being polished. A control means gathers the digital signals corresponding to the thickness data for processing and CMP device control.

US Patent:

47027924, Oct 27, 1987

Filed:

Oct 28, 1985

Appl. No.:

6/791862

Inventors:

William L. Guthrie - Hopewell Junction NY
Frank B. Kaufman - Amawalk NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

C23F 100
H05K 326
H01L 7184

US Classification:

156628

Abstract:

The present invention discloses a method of forming fine conductive lines, patterns, and connectors, and is particularly useful in the formation of electronic devices. The method comprises a series of steps in which: a polymeric material is applied to a substrate; the polymeric material is patterned to form openings through, spaces within, or combinations thereof in the polymeric material; subsequently, conductive material is applied to the patterned polymeric material, so that it at least fills the openings and spaces existing in the polymeric material; and excess conductive material is removed from the exterior major surface of the polymeric material using chemical-mechanical polishing, to expose at least the exterior major surface of the polymeric material. The structure remaining has a planar exterior surface, wherein the conductive material filling the openings and spaces in the patterned polymeric material becomes features such as fine lines, patterns, and connectors which are surrounded by the polymeric material. The polymeric material may be left in place as an insulator or removed, leaving the conductive features on the substrate.

US Patent:

47896485, Dec 6, 1988

Filed:

Oct 28, 1985

Appl. No.:

6/791887

Inventors:

Melanie M. Chow - Poughquag NY
John E. Cronin - Milton VT
William L. Guthrie - Hopewell Junction NY
Carter W. Kaanta - Essex Junction VT
Barbara Luther - Devon PA
William J. Patrick - Newburgh NY
Kathleen A. Perry - Lagrangeville NY
Charles L. Standley - Wappingers Falls NY

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21304
H01L 21306

US Classification:

437225

Abstract:

Patterned conductive lines are formed simultaneously with stud via connections through an insulation layer to previously formed underlying patterned conductive lines in multilevel VLSI chip technology. A first planarized layer of insulation is deposited over a first level of patterned conductive material to which contacts are to be selectively established. The first layer then is covered by an etch stop material. Contact holes are defined in the etch stop material at locations where stud connectors are required. The first layer of insulation is not etched at this time. Next, a second planarized layer of insulation, is deposited over the etch stop material. The second layer insulation, in turn, is etched by photolithography down to the etch stop material to define desired wiring channels, some of which will be in alignment with the previously formed contact holes in the etch stop material. In those locations where the contact holes are exposed, the etching is continued into the first layer of insulation to uncover the underlying first level of patterned conductive material. The channels and via holes are overfilled with metallization.

US Patent:

56331959, May 27, 1997

Filed:

Sep 22, 1995

Appl. No.:

8/532376

Inventors:

William L. Guthrie - Hopewell Junction NY
Naftali E. Lustig - Croton on Hudson NY

Assignee:

International Business Machines, Corp. - Hopewell Junction NY

International Classification:

H01L 2126

US Classification:

438662

Abstract:

A method of laser planarizing metallic thin films minimizes the laser fluences required to melt or nearly melt the metalization. This is accomplished by reducing the optical reflectivity of the metallic lines and vias by using textured thin films. This reduction of optical reflectivity, in turn, reduces the minimum fluence needed to melt or nearly melt the metal using a laser, thus improving the process window and minimizing the damage to the surrounding media.