William S Hobson
age ~67
from Summit, NJ
- Also known as:
-
- William Scott Hobson
- Bill S Hobson
- Phone and address:
-
51 Karen Way, Summit, NJ 07901
9084729703
William Hobson Phones & Addresses
- 51 Karen Way, Summit, NJ 07901 • 9084729703
- Chatham, NJ
- 51 Karen Way, Summit, NJ 07901
Work
-
Company:WD Hobson Real Estate P.C.
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Address:201 East St. George Blvd.
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Phones:4356197400
Images
Specialities
Buyer's Agent • Listing Agent
Real Estate Brokers
William Hobson, St. George UT Realtor
view sourceSpecialties:
Buyer's Agent
Listing Agent
Listing Agent
Work:
WD Hobson Real Estate P.C.
201 East St. George Blvd.
4356197400 (Office)
201 East St. George Blvd.
4356197400 (Office)
Resumes
William Hobson
view sourceSkills:
Arm
William Hobson
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William Hobson
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William Hobson
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William Hobson
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William Hobson
view sourceLocation:
United States
Isbn (Books And Publications)
License Records
William P Hobson
License #:
NS077131A - Expired
Category:
Real Estate Commission
Type:
Real Estate Salesperson-Standard
Lawyers & Attorneys
William Hobson - Lawyer
view sourceOffice:
Ringler & Hobson
Specialties:
Commercial Litigation
Employment and Labor Law
Family Law
General Litigation
Public Lawyers Section
Trial Practice Section
General Practice
Employment and Labor Law
Family Law
General Litigation
Public Lawyers Section
Trial Practice Section
General Practice
ISLN:
906450923
Admitted:
1981
University:
Haverford College, B.A., 1971; University of Arizona, M.A., 1975
Law School:
Arizona State University, J.D., 1981
William Hobson - Lawyer
view sourceOffice:
The Stolar Partnership LLP
Specialties:
Estate Planning
Trusts and Estates
Probate
Real Estate
Partnership
Trusts and Estates
Probate
Real Estate
Partnership
ISLN:
906450947
Admitted:
1970
University:
Dartmouth College, B.A., 1966
Law School:
University of Virginia, LL.B., 1969
Wikipedia
William Hobs
view sourceCaptain William Hobson RN (26 September 1792 10 September 1842) was the first Governor of New Zealand and co-author of the Treaty of Waitangi.
ISBN #
2
Us Patents
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Lateral Injection Vertical Cavity Surface-Emitting Laser
view source -
US Patent:6493368, Dec 10, 2002
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Filed:Jun 28, 2000
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Appl. No.:09/605342
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Inventors:Leo Maria Chirovsky - Bridgewater NJ
Lucian Arthur DAsaro - Madison NJ
William Scott Hobson - Summit NJ
John Lopata - North Plainfield NJ -
Assignee:Agere Systems Inc. - Allentown PA
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International Classification:H01S 500
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US Classification:372 46, 372 43, 372 44, 372 47, 372 48, 372 50, 372107
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Abstract:A lateral injection VCSEL comprises upper and lower mirrors forming a cavity resonator, an active region disposed in the resonator, high conductivity upper and lower contact layers located on opposite sides of the active region, upper and lower electrodes disposed on the upper and lower contact layers, respectively, and on laterally opposite sides of the upper mirror, and a current guide structure including an apertured high resistivity layer for constraining current to flow in a relatively narrow channel through the active region, characterized in that a portion of the lower contact layer that extends under the top electrode has relatively high resistivity. This feature of our invention serves two purposes. First, it suppresses current flow in parallel paths and, therefore, tends to make the current density distribution in the aperture more favorable for the fundamental mode. Second, it reduces parasitic capacitance.
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Method Of Making In-Containing Iii/V Semiconductor Devices
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US Patent:55274250, Jun 18, 1996
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Filed:Jul 21, 1995
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Appl. No.:8/505047
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Inventors:William S. Hobson - Summit NJ
John Lopata - North Plainfield NJ
Fan Ren - Warren NJ -
Assignee:AT&T Corp. - Murray Hill NJ
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International Classification:H01L 2120
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US Classification:1566431
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Abstract:In-containing III/V semiconductor materials (e. g. , InGaP) can be dry etched in BCl. sub. 3 in ECR apparatus. We have discovered that addition of N. sub. 2 to the BCl. sub. 3 can result in substantially higher etch rate (e. g. , more than 50% higher). Etching is substantially without incubation period, and the resulting surface can be very smooth (e. g. , RMS roughness less than 5 nm, even less than 2. 5 nm). Exemplarily, the novel etching step is used in the manufacture of a InGaP/GaAs transistor.
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Lateral Injection Vcsel
view source -
US Patent:60441003, Mar 28, 2000
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Filed:Dec 23, 1997
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Appl. No.:8/997712
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Inventors:William Scott Hobson - Summit NJ
Daryoosh Vakhshoori - Chatham Township, Morris County NJ -
Assignee:Lucent Technologies Inc. - Murray Hill NJ
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International Classification:H01S 319
H01L 2906 -
US Classification:372 46
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Abstract:A VCSEL comprises a pair of multi-layered mirrors forming an optical cavity resonator having its axis perpendicular to the layers of the mirrors, an active region disposed within the resonator, and a current guide for directing pumping current through an aperture to generate stimulated emission of radiation which propagates along the resonator axis. A portion of the radiation forms an output signal which emerges through at least one of the mirrors. The current guide includes a lateral injection structure disposed between one of the mirrors and the current aperture. The lateral injection structure comprises at least one relatively thin, highly doped semiconductor layer, each of the highly doped layer(s) being located at a node of the standing wave of the intracavity radiation, at least one lower doped semiconductor layer disposed adjacent each of the highly doped layers (e. g. , one lower doped layer sandwiched between a pair of highly doped layers), and an etch stop layer disposed between the one mirror and the uppermost highly doped layer.
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Method Of Making A Gaas-Based Laser Comprising A Facet Coating With Gas Phase Sulphur
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US Patent:56680490, Sep 16, 1997
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Filed:Jul 31, 1996
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Appl. No.:8/692834
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Inventors:Utpal Kumar Chakrabarti - Allentown PA
William Scott Hobson - Summit NJ
Fan Ren - Warren NJ
Melinda Lamont Schnoes - South Amboy NJ -
Assignee:Lucent Technologies Inc. - Murray Hill NJ
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International Classification:H01L 2120
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US Classification:438 33
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Abstract:In a method of making a GaAs-based semiconductor laser, a fully processed wafer is cleaved, typically in the ambient atmosphere, into laser bars, the laser bars are loaded into an evacuable deposition chamber (preferably an ECR CVD chamber) and exposed to a H. sub. 2 S plasma. Following the exposure, the cleavage facets are coated in the chamber with a protective dielectric (preferably silicon nitride) layer. The method can be practiced with high through-put, and can yield lasers (e. g. , 980 nm pump lasers for optical fiber amplifiers) capable of operation at high power.
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Method Of Making An Article Comprising An Oxide Layer On A Gaas-Based Semiconductor Body
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US Patent:62710699, Aug 7, 2001
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Filed:Jul 24, 1998
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Appl. No.:9/122558
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Inventors:Alfred Yi Cho - Summit NJ
William Scott Hobson - Summit NJ
Minghwei Hong - Watchung NJ
Jenn-Ming Kuo - Edison NJ
Donald Winslow Murphy - Green Brook NJ
Fan Ren - Warren NJ -
Assignee:Agere Systems Guardian Corp. - Miami Lakes FL
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International Classification:H01L 2976
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US Classification:438204
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Abstract:Disclosed are a method of making GaAs-based enhancement-type MOS-FETs, and articles (e. g. , GaAs-based ICs) that comprise such a MOS-FET. The MOS-FETs are planar devices, without etched recess or epitaxial re-growth, with gate oxide that is primarily Ga. sub. 2 O. sub. 3, and with low midgap interface state density (e. g. , at most 1. times. 10. sup. 11 cm. sup. -2 eV. sup. -1 at 20. degree. C. ). The method involves ion implantation, implant activation in an As-containing atmosphere, surface reconstruction, and in situ deposition of the gate oxide. In preferred embodiments, no processing step subsequent to gate oxide formation is carried out above 300. degree. C. in air, or above about 700. degree. C. in UHV. The method makes possible fabrication of planar enhancement-type MOS-FETs having excellent characteristics, and also makes possible fabrication of complementary MOS-FETs, as well as ICs comprising MOS-FETs and MES-FETs. The method includes deposition of gate oxide of overall composition Ga. sub. x A. sub. y O. sub.
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Article Comprising An Oxide Layer On Gan
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US Patent:59124989, Jun 15, 1999
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Filed:Oct 10, 1997
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Appl. No.:8/948874
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Inventors:William Scott Hobson - Summit NJ
Minghwei Hong - Watchung NJ
James Robert Lothian - Bethlehem PA
Joseph Petrus Mannaerts - Summit NJ
Fan Ren - Warren NJ -
Assignee:Lucent Technologies Inc. - Murray Hill NJ
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International Classification:H01L 2976
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US Classification:257410
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Abstract:A high quality oxide layer has been formed on a GaN surface by a method that involves preparation of the GaN such that the surface is essentially atomically clean and essentially atomically ordered, and that further involves exposing the surface to evaporant from a GGG (gallium gadolinium garnet) evaporation source. MOS structures comprising the GaN/oxide combination have shown low leakage current, as well as charge accumulation and depletion.
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Buried Heterostructure Lasers Using Mocvd Growth Over Patterned Substrates
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US Patent:52088219, May 4, 1993
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Filed:Jan 24, 1992
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Appl. No.:7/825208
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Inventors:Paul R. Berger - Summit NJ
Niloy K. Dutta - Colonial NJ
William S. Hobson - Summit NJ
John Lopata - North Plainfield NJ -
Assignee:AT&T Bell Laboratories - Murray Hill NJ
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International Classification:H01S 319
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US Classification:372 48
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Abstract:This invention pertains to buried heterostructure lasers which have been fabricated using a single step MOCVD growth of an MQW laser structure over a pattern etched GaAs substrate. The wet chemical etching of grooves having a dovetailed cross-section and being parallel to the [011] direction in GaAs substrates produced reentrant mesas which resulted in isolated laser active regions buried by the AlGaAs cladding layer. The 250. mu. m long uncoated lasers emit at about 1. mu. m. Lasers with coated facets have threshold currents of 20 mA and emit >100 mW per facet under room temperature operation. The external differential quantum efficiency for currents of from 30 mA to about 50 mA is found to be nearly independent of temperature in the range of 10. degree. C. to 90. degree. C. suggesting a low temperature dependence of leakage current.
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Vertical Cavity Surface-Emitting Laser With Optical Guide And Current Aperture
view source -
US Patent:61697567, Jan 2, 2001
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Filed:Dec 23, 1997
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Appl. No.:8/997710
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Inventors:Leo Maria Chirovsky - Bridgewater NJ
Lucian Arthur D'Asaro - Madison NJ
William Scott Hobson - Summit NJ
Sanghee Park Hui - New Providence NJ
Ronald Eugene Leibenguth - Palmerton PA
Betty Jyue Tseng - Berkeley Heights NJ
James Dennis Wynn - Plainfield NJ
George John Zydzik - Columbia NJ -
Assignee:Lucent Technologies Inc. - Murray Hill NJ
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International Classification:H01S 5187
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US Classification:372 46
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Abstract:A VCSEL comprises separate current and optical guides that provide unique forms of drive current and transverse mode confinement, respectively. In one embodiment, the optical guide comprises an intracavity high refractive index mesa disposed transverse to the cavity resonator axis and a multi-layered dielectric (i. e. , non-epitaxial) mirror overlaying the mesa. In another embodiment, the current guide comprises an annular first electrode which laterally surrounds the mesa but has an inside diameter which is greater than that of an ion-implantation-defined current aperture. The current guide causes current to flow laterally from the first electrode along a first path segment which is essentially perpendicular to the resonator axis, then vertically from the first segment along a second path segment essentially parallel to that axis, and finally through the current aperture and the active region to a second electrode. The dielectric mirror is deposited only after the formation of the guides in order to facilitate their fabrication.
Amazon
John Napier and the invention of logarithms, 1614
view sourceThis book was digitized and reprinted from the collections of the University of California Libraries. Together, the more than one hundred UC Libraries comprise the largest university research library in the world, with over thirty-five million volumes in their holdings. This book and hundreds of tho...
Author
Ernest William Hobson
Binding
Paperback
Pages
60
Publisher
University of California Libraries
ISBN #
5
Suffer The Little Children: Understanding and Overcoming Spiritual Abuse
view sourceDo you leave church each week feeling humiliated or mistreated? Do members in leadership positions pressure you to do things that you know are not right or do they condemn you whenever you ask questions about how the church is being run? Does your pastor or church insist that you spend more time at ...
Author
W. William Hobson, Dr. Ronald Enroth, Dr. Michael Langone, Carol Giambalvo
Binding
Kindle Edition
Pages
481
ISBN #
2
John Napier and the invention of logarithms, 1614; a lecture
view sourceThis is a pre-1923 historical reproduction that was curated for quality. Quality assurance was conducted on each of these books in an attempt to remove books with imperfections introduced by the digitization process. Though we have made best efforts - the books may have occasional errors that do not...
Author
Ernest William Hobson
Binding
Paperback
Pages
50
Publisher
BiblioLife
ISBN #
1116149036
EAN Code
9781116149036
ISBN #
1
A treatise on plane and advanced trigonometry
view sourceThis account of the theory of the circular functions and their applications to plane trigonometry begins with the measurement of angular magnitude and of lines, and proceeds to circular functions, the expansion of functions of multiple angles, trigonometrical tables, the solution of triangles, and p...
Author
Ernest William Hobson
Binding
Paperback
Pages
383
Publisher
Dover Publications
ISBN #
10
William Suckafree Hobson
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William D. Hobson
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William Hobson
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William Hobson
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William A. Hobson
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William Hobson
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William Hobson
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William Cooter Hobson
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William Hobson
Education:
Chapman University - Computer Information System, University of Georgia - Accounting, La Canada High School
William Hobson
Education:
University of Louisiana at Monroe - Pharmacy & Accounting, Forest Hill High School - General
Tagline:
Retired Corperate Pilot
William Hobson
William Hobson
William Hobson
William Hobson
William Hobson
William Hobson
News
Sentencing day in Center City collapse deaths
view source- Campbell's attorney, William Hobson, focused much of his defense on the fact that two black men were criminally charged while the wealthy white property owner, Richard Basciano, and architect Plato A. Marinakos Jr., who is also white, were not charged.
- Date: Jan 08, 2016
- Category: U.S.
- Source: Google
Flickr
Plaxo
William Hobson
view sourcePresident at Solution Beacons
William Hobson
view sourceEl Pollo Loco
Myspace
Classmates
William Hobson
view sourceSchools:
Dixie High School St. George UT 2003-2007
Community:
Licia Viegas, Joyce Reeves, Laurie Reid
William Hobson
view sourceSchools:
Menomonee Falls High School Menomonee Falls WI 1958-1962
Community:
Lisa Haidinyak, Barb Treu
William Hobson
view sourceSchools:
Edison High School Edison CA 2000-2004
Community:
Benny Esparza, Kelly Abourezk
William Hobson
view sourceSchools:
St. Elizabeth School Philadelphia PA 1970-1974
Community:
Tanya Geisler, Ernest Mitchell, Brian Reaves, Dan Munford
William Hobson
view sourceSchools:
St. Elizabeth School Philadelphia PA 1970-1974
Community:
Tanya Geisler, Ernest Mitchell, Brian Reaves, Dan Munford
William Hobson
view sourceSchools:
Kenton Elementary School Portland OR 1949-1957
Community:
Dennis Kucera, Kay Wynhoff, Deanna Davis, Larry Tellinghusen, Baily Cook, Judith Martin, Jeanette Philpott, Adam Falk, Guy Champion
William Hobson
view sourceSchools:
Elmcrest Public School Mississauga Morocco 1961-1963, Lorne Park Secondary School Mississauga Morocco 1964-1968
Community:
Randy Woolvett, Laura Batten, John Barron
William Hobson
view sourceSchools:
Roxborough High School Philadelphia PA 2005-2009
Community:
Robert Caldwell
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