Dr. McClintock graduated from the University of Virginia School of Medicine in 1978. He works in Fairfax, VA and 1 other location and specializes in Child Neurology. Dr. McClintock is affiliated with Childrens National Health System, Inova Fair Oaks Hospital, Inova Fairfax Medical Campus, Inova Loudoun Hospital and Medstar Washington Hospital Center.
- Santa Clara CA, US Zhihong Wang - Santa Clara CA, US Wen-Chiang Tu - Mountain View CA, US Zhefu Wang - Milpitas CA, US Hassan G. Iravani - Sunnyvale CA, US Boguslaw A. Swedek - Cupertino CA, US Fred C. Redeker - Fremont CA, US William H. McClintock - Los Altos CA, US
International Classification:
H01L 21/66 H01L 21/321
Abstract:
A substrate for use in fabrication of an integrated circuit has a layer with a plurality of conductive interconnects. The substrate includes a semiconductor body, a dielectric layer disposed over the semiconductor body, a plurality of conductive lines of a conductive material disposed in first trenches in the dielectric layer to provide the conductive interconnects, and a closed conductive loop structure of the conductive material disposed in second trenches in the dielectric layer. The closed conductive loop is not electrically connected to any of the conductive lines.
Monitoring Of Polishing Pad Thickness For Chemical Mechanical Polishing
- Santa Clara CA, US Zhihong Wang - Santa Clara CA, US Harry Q. Lee - Los Altos CA, US Brian J. Brown - Palo Alto CA, US Wen-Chiang Tu - Mountain View CA, US William H. McClintock - Los Altos CA, US Wei Lu - Fremont CA, US
International Classification:
B24B 37/005 B24B 53/017 G01B 7/06
Abstract:
An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner including a conductive body to be pressed against the polishing surface, an in-situ polishing pad thickness monitoring system including a sensor disposed in the platen to generate a magnetic field that passes through the polishing pad, and a controller configured to receive a signal from the monitoring system and generate a measure of polishing pad thickness based on a portion of the signal corresponding to a time that the sensor is below the conductive body of the pad conditioner.
Substrate Features For Inductive Monitoring Of Conductive Trench Depth
- Santa Clara CA, US Zhihong Wang - Santa Clara CA, US Wen-Chiang Tu - Mountain View CA, US Zhefu Wang - Milpitas CA, US Hassan G. Iravani - San Jose CA, US Boguslaw A. Swedek - Cupertino CA, US Fred C. Redeker - Fremont CA, US William H. McClintock - Los Altos CA, US
International Classification:
H01L 21/66 H01L 21/306
Abstract:
A substrate for use in fabrication of an integrated circuit has a layer with a plurality of conductive interconnects. The substrate includes a semiconductor body, a dielectric layer disposed over the semiconductor body, a plurality of conductive lines of a conductive material disposed in first trenches in the dielectric layer to provide the conductive interconnects, and a closed conductive loop structure of the conductive material disposed in second trenches in the dielectric layer. The closed conductive loop is not electrically connected to any of the conductive lines.
- Santa Clara CA, US Zhihong Wang - Santa Clara CA, US Wen-Chiang Tu - Mountain View CA, US William H. McClintock - Los Altos CA, US
Assignee:
Applied Materials, Inc. - Santa Clara CA
International Classification:
B24B 49/12
US Classification:
451 5
Abstract:
A method of controlling a polishing system includes polishing a substrate at a first polishing station, transporting the substrate to an in-line optical metrology system positioned between the first polishing station and a second polishing station, at the in-line optical metrology system measuring a spectrum reflected from the substrate, and generating a characterizing value from the spectrum, determining that the substrate needs rework based on the characterizing value, returning the substrate to the first polishing station and performing rework of the substrate at the first polishing station; and transporting the substrate to the second polishing station and polishing the substrate at the second polishing station.