William James Minford

US Patent:

7408693, Aug 5, 2008

Filed:

Oct 31, 2007

Appl. No.:

11/932356

Inventors:

Karl Kissa - West Simsbury CT, US
Gregory J. McBrien - Glastonbury CT, US
Glen Drake - Windsor CT, US
William J. Minford - Windsor CT, US

Assignee:

JDS Uniphase Corporation - Milpitas CA

International Classification:

G02F 1/035
G02F 1/03

US Classification:

359245, 385 2

Abstract:

The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by electro-migration, galvanic, and other effects that can be present in non-hermetic packages. The RF electrodes are supported by a first surface of the electro-optic substrate, while the bias electrodes are supported by a second opposite surface.

US Patent:

7512303, Mar 31, 2009

Filed:

Jun 27, 2007

Appl. No.:

11/769070

Inventors:

Benjamin F. Catching - Santa Rosa CA, US
Donald M. Friedrich - Windsor CA, US
Charles A. Hulse - Sebastopol CA, US
Marc K. Von Gunten - Los Altos CA, US
Jason Reed - West Hartford CT, US
Karl Kissa - West Simsbury CT, US
Glen Drake - Windsor CT, US
Julia Duncan - North Granby CT, US
William J. Minford - Windsor CT, US
Hiren V. Shah - Santa Rosa CA, US
Jerry Zieba - Santa Rosa CA, US
Jason Jiazhan Xu - Weatogue CT, US

Assignee:

JDS Uniphase Corporation - Milpitas CA

International Classification:

G02B 6/10

US Classification:

385131

Abstract:

The invention relates to a wafer scale process for the manufacture of optical waveguide devices, and particularly for the manufacture of ridge waveguide devices, and the improved waveguides made thereby. The present invention has found a process for achieving sub-micron control of an optical waveguiding layer thickness by providing a dimensionally stable wafer assembly into which adhesive can be introduced without altering the planar relationship between a carrier wafer and an optically transmissive wafer in wafer scale manufacture. This process permits wafer scale manufacture of optical waveguide devices including thin optically transmissive layers. A pattern of spacer pedestals is created by a deposition and etch back, or by a surface etch process to precisely reference surface information from a master surface to a carrier wafer to a thin optically transmissive wafer. The tolerance achievable in accordance with this process provides consistent yield across the wafer.

US Patent:

7529433, May 5, 2009

Filed:

Jan 9, 2008

Appl. No.:

11/971726

Inventors:

Karl Kissa - West Simsbury CT, US
William J. Minford - Windsor CT, US
Jason Jiazhan Xu - Weatogue CT, US
Glen Drake - Windsor CT, US

Assignee:

JDS Uniphase Corporation - Milpitas CA

International Classification:

G02F 1/295
G02B 6/12

US Classification:

385 8, 385 14

Abstract:

The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by electro-migration and other effects that can be present in non-hermetic packages. The bias electrodes include an upper split portion and an optically transparent lower portion. The optically transparent lower layer improves modulation frequency and reduces optical loss.

US Patent:

7844149, Nov 30, 2010

Filed:

Jan 9, 2008

Appl. No.:

11/971683

Inventors:

Karl Kissa - West Simsbury CT, US
William J. Minford - Windsor CT, US
Glen Drake - Windsor CT, US

Assignee:

JDS Uniphase Corporation - Milpitas CA

International Classification:

G02B 6/42

US Classification:

385 40, 385 1, 385 2, 385 3, 385 4, 385 15

Abstract:

The invention relates to an electro-optic modulator structure containing an additional set of bias electrodes buried within the device for applying bias to set the operating point. Thus the RF electrodes used to modulate incoming optical signals can be operated with zero DC bias, reducing electrode corrosion by galvanic and other effects that can be present in non-hermetic packages. The bias electrodes are at least partially separated from the substrate with a buffer layer, which in one embodiment has a small amount of conductivity. This conductive buffer layer reduces optical loss from the bias electrodes and also reduces DC drift.

US Patent:

20030100195, May 29, 2003

Filed:

Nov 28, 2001

Appl. No.:

09/997650

Inventors:

Julia Duncan - Mertztown PA, US
William Minford - Northampton PA, US
John Osenbach - Kutztown PA, US

Assignee:

Agere Systems Inc. - Allentown PA

International Classification:

H01L021/31
H01L021/469

US Classification:

438/783000, 438/778000

Abstract:

The present invention provides a semiconductor device, a method of manufacture therefor, and an integrated circuit including the semiconductor device. The semiconductor device includes a semiconductor substrate and an indium doped dielectric layer located over the semiconductor substrate.

US Patent:

61951919, Feb 27, 2001

Filed:

Aug 19, 1999

Appl. No.:

9/377091

Inventors:

John William Osenbach - Kutztown PA
William James Minford - Northampton PA
Douglas A. Herr - Lancaster PA
Henry Miles O'Bryan - Plainfield NJ
Allan James Bruce - Scotch Plains NJ

Assignee:

Lucent Technologies, Inc. - Murray Hill NJ

International Classification:

G02B 2602

US Classification:

359238

Abstract:

Optical devices using non-centric crystals, such as lithium niobate, and methods for making and using the devices, are provided. The devices provide improved temperature stability as compared to conventional devices using non-centric crystals. The improved temperature stability is provided by etching the surface of a non-centric crystal to a depth of less than about 300 angstroms. The devices and methods of the invention reduce the magnitude of change in bias voltage required to maintain an optical crystal at a pre-selected operating point.