William S Morrison

US Patent:

6428387, Aug 6, 2002

Filed:

Jul 13, 2000

Appl. No.:

09/615378

Inventors:

Kyle P. Hunt - Dallas TX
William R. Morrison - Dallas TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

B24B 100

US Classification:

451 8, 451 36, 451 41

Abstract:

A chemical mechanical polishing method using a modified slurry. A modified slurry is used with high platen rotational speed and high wafer carrier rotation speeds. The endpoint of the polishing process is determined by monitoring the electrical current of the wafer carrier motor.

US Patent:

6461965, Oct 8, 2002

Filed:

Jan 31, 2002

Appl. No.:

10/061811

Inventors:

Kyle P. Hunt - Dallas TX
William R. Morrison - Dallas TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21461

US Classification:

438692, 438690, 438691, 438745

Abstract:

A method for effecting a finishing operation on a semiconductor workpiece situated in a finishing apparatus that includes a finishing tool configured for pressingly engaging the workpiece with a pressing force for abradingly removing material from the workpiece includes the steps of: (a) situating the finishing tool to operate against the workpiece; (b) operating the finishing tool with a pressing force to effect the abrading removal; (c) measuring at least one parameter associated with the finishing operation to determine at least one parametric value for the at least one parameter; (d) modulating the pressing force according to a predetermined relationship between the pressing force and the at least one parametric value; and (e) repeating steps (c) and (d) until the finishing operation is complete.

US Patent:

7452818, Nov 18, 2008

Filed:

Mar 30, 2007

Appl. No.:

11/694700

Inventors:

Kyle Hunt - Richardson TX, US
Neel Bhatt - Allen TX, US
Asadd M. Hosein - Plano TX, US
Brian L. Vialpando - Dallas TX, US
William R. Morrison - Dallas TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 21/302
H01L 21/461

US Classification:

438692, 438680, 257E2117, 257E21304, 257E21632

Abstract:

The disclosure provides a method for manufacturing a semiconductor device. The method, in one embodiment, includes forming semiconductor features () over a substrate (), and then forming a layer of material () over the semiconductor features (). This method further includes selectively etching portions of the layer of material () based upon a density or size of the semiconductor features () located thereunder, and then polishing remaining portions of the layer of material ().

US Patent:

7960840, Jun 14, 2011

Filed:

May 11, 2009

Appl. No.:

12/463830

Inventors:

Thomas Dyer Bonifield - Dallas TX, US
Thomas W. Winter - McKinney TX, US
William R. Morrison - Dallas TX, US
Gregory D. Winterton - Flower Mound TX, US
Asad M. Haider - Plano TX, US

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

H01L 23/52

US Classification:

257774, 257E23145, 257E23169, 257E23627

Abstract:

A TSV-MEMS packaging process is provided. The process includes forming TSVs in the front side of the product wafer, and attaching a first carrier to the front side of the product wafer, subsequent to forming TSVs. The process further includes thinning the back side of the product wafer to expose TSV tips, detaching the first carrier from the front side of the product wafer, and transferring the thinned wafer to a second carrier with back side adhered to the second wafer carrier. Semiconductor components are added to the front side of the product wafer, followed by forming a hermetic cavity over the added semiconductor components, and detaching the second carrier from the back side of the product wafer. Wafer level processing continues after detaching the second carrier.

US Patent:

59385057, Aug 17, 1999

Filed:

Mar 4, 1998

Appl. No.:

9/034514

Inventors:

William R. Morrison - Dallas TX
Kyle P. Hunt - Dallas TX

Assignee:

Texas Instruments Incorporated - Dallas TX

International Classification:

B24B 104

US Classification:

451 36

Abstract:

An improved slurry for polish removal. One application of this slurry is for shallow trench isolation processing in semiconductor manufacturing. The improved slurry has an enhanced oxide to nitride polish removal selectivity. A modified slurry is formed by mixing a polishing slurry with tetramethyl ammonium hydroxide and hydrogen peroxide. In an alternative embodiment, the modified slurry is formed by mixing a salt of tetramethyl ammonium with a base and with hydrogen peroxide to form the modified slurry. The improved slurry when used during the chemical mechanical polishing (CMP) step of an integrated shallow trench isolation manufacturing process allows the reverse pattern, etch and clean steps to be eliminated prior to CMP.

US Patent:

20230126914, Apr 27, 2023

Filed:

Aug 22, 2022

Appl. No.:

17/892895

Inventors:

- Dallas TX, US
Richard Chen - Taoyuan, TW
William R. Morrison - Dallas TX, US

International Classification:

B81C 1/00
B81B 7/00

Abstract:

An example method of producing a microelectromechanical system (MEMS) package, the method comprising: applying first epoxy layers to a first substrate, at least one of the first epoxy layers coupled to a second substrate; applying a first post gel heat treatment to the first epoxy layers; after applying the first post gel heat treatment to the first epoxy layers, applying second epoxy layers to the second substrate and to the first epoxy layers; and applying a second post gel heat treatment to the first epoxy layers and the second epoxy layers.