William W Powers

US Patent:

8081074, Dec 20, 2011

Filed:

Sep 11, 2008

Appl. No.:

12/208958

Inventors:

Jack L. Marshall - Harvest AL, US
John Allen Burnham - Madison AL, US
Rodney L. Weaver - Huntsville AL, US
Ronald E. Smith - Laceys Spring AL, US
William T. Powers - Taft TN, US

International Classification:

G08B 13/12

US Classification:

3405682, 3405681, 3405683, 3405452, 340635

Abstract:

An apparatus for deterring removal of electrical wiring that is installed in a building includes a controller, and a wiring module responsive to the controller and forming a monitored circuit with installed electrical wiring by coupling to an end of the wiring located at a load distribution junction. The other end of the wiring is electrically coupled, and can be coupled with a controlled impedance, or with a protected asset. The apparatus is configured with control logic to issue an alert if the integrity of the monitored circuit has been compromised.

US Patent:

62407856, Jun 5, 2001

Filed:

Dec 10, 1996

Appl. No.:

8/778065

Inventors:

John J. Chapman - Gloucester VA
Qamar A. Shams - Yorktown VA
William T. Powers - Huntsville AL

Assignee:

The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

International Classification:

G01L 906

US Classification:

73727

Abstract:

A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.

US Patent:

59556781, Sep 21, 1999

Filed:

Dec 18, 1997

Appl. No.:

8/992972

Inventors:

John J. Chapman - Gloucester VA
Qamar A. Shams - Yorktown VA
William T. Powers - Huntsville AL

Assignee:

The United States of America as represented by the Administrator of the
National Aeronautics and Space Administration - Washington DC

International Classification:

G01L 700

US Classification:

73756

Abstract:

A pressure sensor is provided for cryogenic, high pressure applications. A highly doped silicon piezoresistive pressure sensor is bonded to a silicon substrate in an absolute pressure sensing configuration. The absolute pressure sensor is bonded to an aluminum nitride substrate. Aluminum nitride has appropriate coefficient of thermal expansion for use with highly doped silicon at cryogenic temperatures. A group of sensors, either two sensors on two substrates or four sensors on a single substrate are packaged in a pressure vessel.