William Todd Warren

US Patent:

6960243, Nov 1, 2005

Filed:

Jul 18, 2003

Appl. No.:

10/623188

Inventors:

Douglas M. Smith - Albuquerque NM, US
James S. Dusenbury - Novi MI, US
William L. Warren - Stillwater OK, US

Assignee:

Nanopore, Inc. - Albuquerque NM

International Classification:

B01D053/04
B01D053/28

US Classification:

95117, 95126, 95900, 95901, 96122, 96128, 96130, 96135, 96142, 96144, 96153

Abstract:

A method and apparatus for the extraction of water from a gas stream, such as atmospheric air. The method includes contacting the gas stream with a porous adsorbent material having a surface modifying agent adsorbed on the surface of a porous support. The surface modifying agent creates a hydrophilic surface for the adsorption of the water. After the water is adsorbed into the pores, the surface modifying agent is selectively desorbed from the surface. The water then evaporates from the pore and can be collected in a condenser. The method and apparatus of the present invention advantageously operate in a substantially isothermal manner, thereby reducing the size and power consumption of the device. The device can advantageously be used to extract potable drinking water from atmospheric air.

US Patent:

61401579, Oct 31, 2000

Filed:

Aug 5, 1998

Appl. No.:

9/129588

Inventors:

William L. Warren - Albuquerque NM
Karel J. R. Vanheusden - Albuquerque NM
Daniel M. Fleetwood - Albuquerque NM
Roderick A. B. Devine - St. Martin le Vinoux, FR

Assignee:

Sandia Corporation - Albuquerque NM
Science & Technology Corporation at University of New Mexico - Albuquerque NM
France Telecom/CNET - Paris

International Classification:

H01L 2100

US Classification:

438149

Abstract:

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

US Patent:

56778252, Oct 14, 1997

Filed:

Dec 28, 1995

Appl. No.:

8/579891

Inventors:

Joseph T. Evans - Albuquerque NM
William L. Warren - Albuquerque NM
Bruce A. Tuttle - Albuquerque NM
Duane B. Dimos - Albuquerque NM
Gordon E. Pike - Albuquerque NM

International Classification:

H01G 406

US Classification:

3613214

Abstract:

An improved ferroelectric capacitor exhibiting reduced imprint effects in comparison to prior art capacitors. A capacitor according to the present invention includes top and bottom electrodes and a ferroelectric layer sandwiched between the top and bottom electrodes, the ferroelectric layer comprising a perovskite structure of the chemical composition ABO. sub. 3 wherein the B-site comprises first and second elements and a dopant element that has an oxidation state greater than +4. The concentration of the dopant is sufficient to reduce shifts in the coercive voltage of the capacitor with time. In the preferred embodiment of the present invention, the ferroelectric element comprises Pb in the A-site, and the first and second elements are Zr and Ti, respectively. The preferred dopant is chosen from the group consisting of Niobium, Tantalum, and Tungsten. In the preferred embodiment of the present invention, the dopant occupies between 1 and 8% of the B-sites.

US Patent:

55788467, Nov 26, 1996

Filed:

Mar 17, 1995

Appl. No.:

8/406386

Inventors:

Joseph T. Evans - Albuquerque NM
William L. Warren - Albuquerque NM
Bruce A. Tuttle - Albuquerque NM

International Classification:

H01L 2978

US Classification:

257295

Abstract:

An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO. sub. 3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively.

US Patent:

58305750, Nov 3, 1998

Filed:

Sep 16, 1996

Appl. No.:

8/714547

Inventors:

William L. Warren - Albuquerque NM
Karel J. R. Vanheusden - Albuquerque NM
Daniel M. Fleetwood - Albuquerque NM
Roderick A. B. Devine - St. Martin le Vinoux, FR

Assignee:

Sandia National Laboratories - Albuquerque NM

International Classification:

B32B 516

US Classification:

428404

Abstract:

An electrically written memory element utilizing the motion of protons within a dielectric layer surrounded by layers on either side to confine the protons within the dielectric layer with electrode means attached to the surrounding layers to change the spatial position of the protons within the dielectric layer. The device is preferably constructed as a silicon-silicon dioxide-silicon layered structure with the protons being introduced to the structure laterally through the exposed edges of the silicon dioxide layer during a high temperature anneal in an atmosphere containing hydrogen gas. The device operates at low power, is preferably nonvolatile, is radiation tolerant, and is compatible with convention silicon MOS processing for integration with other microelectronic elements on the same silicon substrate. With the addition of an optically active layer, the memory element becomes an electrically written, optically read optical memory element.

US Patent:

62256548, May 1, 2001

Filed:

May 1, 1996

Appl. No.:

8/640572

Inventors:

Joseph T. Evans - Albuquerque NM
William L. Warren - Albuquerque NM
Bruce A. Tuttle - Albuquerque NM

Assignee:

Radiant Technologies, Inc - Albuquerque NM

International Classification:

B05D 512

US Classification:

257295

Abstract:

An improved ferroelectric FET structure in which the ferroelectric layer is doped to reduce retention loss. A ferroelectric FET according to the present invention includes a semiconductor layer having first and second contacts thereon, the first and second contacts being separated from one another. The ferroelectric FET also includes a bottom electrode and a ferroelectric layer which is sandwiched between the semiconductor layer and the bottom electrode. The ferroelectric layer is constructed from a perovskite structure of the chemical composition ABO. sub. 3 wherein the B site comprises first and second elements and a dopant element that has an oxidation state greater than +4 in sufficient concentration to impede shifts in the resistance measured between the first and second contacts with time. The ferroelectric FET structure preferably comprises Pb in the A-site. The first and second elements are preferably Zr and Ti, respectively.

US Patent:

59490713, Sep 7, 1999

Filed:

Aug 14, 1997

Appl. No.:

8/912949

Inventors:

Judith A. Ruffner - Albuquerque NM
Jeff A. Bullington - Albuquerque NM
Paul G. Clem - Albuquerque NM
William L. Warren - Albuquerque NM
C. Jeffrey Brinker - Albuquerque NM
Bruce A. Tuttle - Albuquerque NM
Robert W. Schwartz - Seneca SC

Assignee:

Sandia Corporation - Albuquerque NM

International Classification:

H01L 2314

US Classification:

2503383

Abstract:

A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr. sub. 4 Ti. sub. 6)O. sub. 3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550. degree. C.

US Patent:

57862311, Jul 28, 1998

Filed:

Dec 5, 1995

Appl. No.:

8/567679

Inventors:

William L. Warren - Albuquerque NM
Karel J. R. Vanheusden - Albuquerque NM
James R. Schwank - Albuquerque NM
Daniel M. Fleetwood - Albuquerque NM
Marty R. Shaneyfelt - Albuquerque NM
Peter S. Winokur - Albuquerque NM
Roderick A. B. Devine - St. Martin le Vinoux, FR

Assignee:

Sandia Corporation - Albuquerque NM

International Classification:

H01L 2166
G01R 3126

US Classification:

438 17

Abstract:

A method for screening or qualifying semiconductor substrates for integrated circuit fabrication. The method comprises the steps of annealing at least one semiconductor substrate at a first temperature in a defect-activating ambient (e. g. hydrogen, forming gas, or ammonia) for sufficient time for activating any defects within on oxide layer of the substrate; measuring a defect-revealing electrical characteristic of at least a portion of the oxide layer for determining a quantity of activated defects therein; and selecting substrates for which the quantity of activated defects is below a predetermined level. The defect-revealing electrical characteristic may be a capacitance-versus-voltage (C-V) characteristic or a current-versus-voltage (I-V) characteristic that is dependent on an electrical charge in the oxide layer generated by the activated defects. Embodiments of the present invention may be applied for screening any type of semiconductor substrate or wafer having an oxide layer formed thereon or therein. This includes silicon-on-insulator substrates formed by a separation by the implantation of oxygen (SIMOX) process or the bond and etch back silicon-on-insulator (BESOI) process, as well as silicon substrates having a thermal oxide layer or a deposited oxide layer.