Wojciech Z Rosnowski

US Patent:

40664856, Jan 3, 1978

Filed:

Jan 21, 1977

Appl. No.:

5/761426

Inventors:

Wojciech Rosnowski - Summit NJ
Richard Denning - Springfield NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 21225

US Classification:

148188

Abstract:

A method of fabricating a semiconductor device comprises steps for forming recesses which can be used in the subsequent visual alignment of photomasks. The novel recess forming steps are so linked with a conventional processing step that the total number of steps required for the formation of the recesses is reduced. The present method is particularly adaptable to the fabrication of unisurface silicon controlled rectifiers wherein a doped isolation-type grid is formed to define each device.

US Patent:

42138078, Jul 22, 1980

Filed:

Apr 20, 1979

Appl. No.:

6/032027

Inventors:

Wojciech Rosnowski - Summit NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 21225
H01L 21308

US Classification:

148187

Abstract:

A method of fabricating a semiconductor device comprising the steps of disposing a layer of dopant material over exposed portions of a surface of a semiconductor body and over portions of a masking layer adjacent the exposed portions, the dopant material having a diffusion coefficient through the masking layer at least about as large as its diffusion coefficient into the body. The dopant material is selectively etched to remove portions overlying the masking layer and thereafter remaining portions of the masking layer are etched to remove any dopant material which might still remain thereover.

US Patent:

41993861, Apr 22, 1980

Filed:

Nov 28, 1978

Appl. No.:

5/964386

Inventors:

Wojciech Rosnowski - Summit NJ
John M. S. Neilson - Mountaintop PA

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 21225

US Classification:

148188

Abstract:

Uniform aluminum diffusion into monocrystalline silicon is obtained by forming a polycrystalline silicon underlayer on the surface of a monocrystalline silicon body, depositing a layer of aluminum on the polycrystalline silicon underlayer by evaporation at a temperature of less than about 250. degree. C. , depositing a silicon overlayer over said aluminum layer at a temperature less than about 250. degree. C. and raising the temperature of said structure to between 900. degree. C. and 1300. degree. C. to cause the aluminum to diffuse into said monocrystalline silicon.

US Patent:

40509672, Sep 27, 1977

Filed:

Dec 9, 1976

Appl. No.:

5/749179

Inventors:

Wojciech Rosnowski - Summit NJ
Samuel Ponczak - Somerville NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 21223
H01L 21225

US Classification:

148189

Abstract:

A silicon substrate is coated with a mask comprised of the combination of a silicon dioxide layer and a layer of undoped polycrystalline silicon. Aluminum is then diffused through windows formed in the mask. The mask has proven effective for relatively deep aluminum diffusion.

US Patent:

40295281, Jun 14, 1977

Filed:

Aug 30, 1976

Appl. No.:

5/718806

Inventors:

Wojciech Rosnowski - Summit NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 21223

US Classification:

148187

Abstract:

A method of selectively doping a semiconductor body with aluminum impurities comprises the step of forming a layer of silicon dioxide which is thick enough so that during the diffusion a masking portion of aluminum oxide is formed therein. The aluminum oxide formed serves as a mask against the penetration of aluminum impurities through the remaining silicon dioxide therebelow.

US Patent:

42111820, Jul 8, 1980

Filed:

May 5, 1978

Appl. No.:

5/903118

Inventors:

Wojciech Rosnowski - Summit NJ

Assignee:

RCA Corporation - New York NY

International Classification:

C23C 1308

US Classification:

118725

Abstract:

A diffusion apparatus, particularly useful for diffusing aluminum into semiconductor wafers, comprises a quartz evaporation tube in combination with a restrictor plate which is inserted in an open end thereof. The restrictor plate preferably has substantially the same shape as, but a slightly smaller cross-section than, the evaporation tube. In practice, the relatively small gap between the restrictor plate and the evaporation tube results in a substantially negligible leak in the diffusion apparatus. As a result the apparatus effectively operates as if it were a sealed ampule while in fact it is open, i. e. not sealed.

US Patent:

39973794, Dec 14, 1976

Filed:

Jun 20, 1975

Appl. No.:

5/588863

Inventors:

Wojciech Rosnowski - Summit NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 21223

US Classification:

148189

Abstract:

A method of diffusing conductivity modifiers into a semiconductor body is disclosed. The method employs an open system operated under a relatively high vacuum. A silicon alloy serves as the source of conductivity modifiers. Control of the dopant vapor pressure during diffusion is provided by controlling the composition of the silicon alloy. Additional control of the diffusion is provided by controlling the temperature of the system during diffusion and by regulating the vacuum drawn during diffusion.

US Patent:

40999971, Jul 11, 1978

Filed:

Jun 21, 1976

Appl. No.:

5/698480

Inventors:

Wojciech Rosnowski - Summit NJ

Assignee:

RCA Corporation - New York NY

International Classification:

H01L 21225
H01L 21223

US Classification:

148187

Abstract:

A method of fabricating a semiconductor device having a one type conductivity portion substantially surrounded by a second type conductivity portion is disclosed. The method involves selectively diffusing different impurities having the same conductivity inducing effect. The disclosed method is particularly adaptable to forming a plurality of devices in a relatively thick semiconductor wafer.