Woo I Kim

US Patent:

20070077552, Apr 5, 2007

Filed:

Oct 3, 2006

Appl. No.:

11/542564

Inventors:

Michael Hecht - Highland Park NJ, US
Woo Kim - Princeton NJ, US
Christine Wurth - Loerrach, DE

International Classification:

C12Q 1/04
C12Q 1/00

US Classification:

435004000, 435034000

Abstract:

We have developed a high through-put screen capable of isolating inhibitors of polypeptide aggregation, such as Alzheimer's Disease polypeptide Aβ aggregation, or other disease state aggregating proteins, from amidst large libraries of candidate inhibitors. The screen uses a fusion of a polypeptide domain that self-aggregates, such as an Aβ42 domain characteristic of Alzheimer's disease plaques, to a reporter construct, such as Green Fluorescent Protein (GFP) or similar fluorescent protein. In the absence of inhibition, the rapid misfolding and aggregation of Aβ42 causes the entire fusion protein to misfold, thereby preventing fluorescence. Compounds that inhibit Aβ42 aggregation enable GFP to fold into its native structure, and can be identified by the resulting fluorescent signal.

US Patent:

20160268195, Sep 15, 2016

Filed:

Mar 13, 2015

Appl. No.:

14/656770

Inventors:

- Grand Cayman, KY
Moosung M. CHAE - Englewood Cliffs NJ, US
Woo Sik KIM - Clifton Park NY, US

International Classification:

H01L 23/522
H01L 49/02
H01L 23/532
H01L 21/768
H01L 21/02

Abstract:

Integrated circuits with single core inductors and methods for producing them are provided. Embodiments include forming a trench in a dielectric layer; forming a first metal-oxide hard mask by disposing a metal hard mask and an oxide hard mask over the dielectric layer and in strips in the trench; forming metal line trenches through the first metal-oxide hard mask and into the first dielectric layer on opposite sides of the inductor trench and first vias; filling the first metal line trenches, first vias, and trench; forming another dielectric layer and a second metal-oxide hard mask over the filled trench; forming a second trench through the second metal-oxide hard mask and into the second dielectric layer and second metal line trenches and second vias; and filling the second metal line trenches, second vias, and second trench.