Woo C Kim

US Patent:

20220190778, Jun 16, 2022

Filed:

Aug 30, 2021

Appl. No.:

17/460975

Inventors:

- Norwalk CT, US
Woo Kim - Little Neck NY, US
Scott Van Pelt - Tarrytown NY, US

Assignee:

Gamechange Solar Corp. - Norwalk CT

International Classification:

H02S 30/10
F16M 13/02

Abstract:

A mounting assembly comprises a reinforcement channel configured to nest around a first base of a first hat-shaped channel wherein the first hat-shaped channel is configured to nest around a second base of a second hat-shaped channel and the second hat-shaped channel is configured to nest around a load distributing channel. The mounting base, the reinforcement channel, the first hat-shaped channel, the second hat-shaped channel and the load distributing channel are configured to be removable with respect to a fastener along the fastener axis. The fastener is received through coaxial apertures located within the mounting base, the reinforcement channel, the first hat-shaped channel, the second hat-shaped channel and the load distributing channel. The channels are of a certain length that is sufficient to add stiffness to an object being supported by the mounting assembly.

US Patent:

20160268195, Sep 15, 2016

Filed:

Mar 13, 2015

Appl. No.:

14/656770

Inventors:

- Grand Cayman, KY
Moosung M. CHAE - Englewood Cliffs NJ, US
Woo Sik KIM - Clifton Park NY, US

International Classification:

H01L 23/522
H01L 49/02
H01L 23/532
H01L 21/768
H01L 21/02

Abstract:

Integrated circuits with single core inductors and methods for producing them are provided. Embodiments include forming a trench in a dielectric layer; forming a first metal-oxide hard mask by disposing a metal hard mask and an oxide hard mask over the dielectric layer and in strips in the trench; forming metal line trenches through the first metal-oxide hard mask and into the first dielectric layer on opposite sides of the inductor trench and first vias; filling the first metal line trenches, first vias, and trench; forming another dielectric layer and a second metal-oxide hard mask over the filled trench; forming a second trench through the second metal-oxide hard mask and into the second dielectric layer and second metal line trenches and second vias; and filling the second metal line trenches, second vias, and second trench.