Xi I Chen

US Patent:

8134864, Mar 13, 2012

Filed:

Aug 13, 2009

Appl. No.:

12/541111

Inventors:

Randall H. Victora - New Brighton MN, US
Xi Chen - Minneapolis MN, US

Assignee:

Regents of the University of Minnesota - St. Paul MN

International Classification:

G11C 11/00

US Classification:

365158, 365171, 365173

Abstract:

In general, the invention is directed to techniques for reducing the amount of switching current that is utilized within a magnetic storage (e. g. , MRAM) device. An example apparatus includes a fixed magnetic layer that provides a fixed direction of magnetization, an exchange-coupled magnetic multi-layer structure, and a non-magnetic layer placed between the fixed magnetic layer and the exchange-coupled magnetic multi-layer structure. The exchange-coupled magnetic multi-layer structure includes a recording layer configured to record information and an assisting layer having a lower anisotropy than the recording layer. The exchange coupling between the recording and assisting layers is operable to switch a magnetization direction of the recording layer. In some cases, the exchange-coupled magnetic multi-layer structure may further include a spacer separating the recording and assisting layers and configured to weaken an exchange coupling between the recording and assisting layers.