Xi I Li

US Patent:

7498271, Mar 3, 2009

Filed:

Jun 24, 2008

Appl. No.:

12/145035

Inventors:

Ricardo A. Donaton - Cortlandt Manor NY, US
Rashmi Jha - Wappingers Falls NY, US
Siddarth A. Krishnan - Peekskill NY, US
Xi Li - Somers NY, US
Renee T. Mo - Briarcliff Manor NY, US
Naim Moumen - Walden NY, US
Wesley C. Natzle - New Paltz NY, US
Ravikumar Ramachandran - Pleasantville NY, US
Richard S. Wise - Newburgh NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/31

US Classification:

438775, 438777, 438788, 438709, 438710

Abstract:

The present invention, in one embodiment, provides a method of forming a gate structure including providing a substrate including a semiconducting device region, a high-k dielectric material present atop the semiconducting device region, and a metal gate conductor atop the high-k dielectric material, applying a photoresist layer atop the metal gate conductor; patterning the photoresist layer to provide an etch mask overlying a portion of the metal gate conductor corresponding to a gate stack; etching the metal gate conductor and the high-k dielectric material selective to the etch mask; and removing the etch mask with a substantially oxygen free nitrogen based plasma.

US Patent:

7560387, Jul 14, 2009

Filed:

Jan 25, 2006

Appl. No.:

11/275707

Inventors:

Scott D. Allen - Dumont NJ, US
Kangguo Cheng - Beacon NY, US
Xi Li - Somers NY, US
Kevin R. Winstel - Poughkeepsie NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/311

US Classification:

438702, 438719, 438723, 438724, 257E21002

Abstract:

Methods for opening a hard mask and a silicon-on-insulator substrate in a single process chamber are disclosed. In one embodiment, the method includes patterning a photoresist over a stack including an anti-reflective coating (ARC) layer, a silicon dioxide (SiO) based hard mask layer, a silicon nitride pad layer, a silicon dioxide (SiO) pad layer and the SOI substrate, wherein the SOI substrate includes a silicon-on-insulator layer and a buried silicon dioxide (SiO) layer; and in a single process chamber: opening the ARC layer; etching the silicon dioxide (SiO) based hard mask layer; etching the silicon nitride pad layer; etching the silicon dioxide (SiO) pad layer; and etching the SOI substrate. Etching all layers in a single chamber reduces the turn-around-time, lowers the process cost, facilitates process control and/or improve a trench profile.

US Patent:

7625151, Dec 1, 2009

Filed:

Apr 26, 2007

Appl. No.:

11/740757

Inventors:

Xi Ming Li - Brooklyn NY, US
Steve Hebeisen - Somers NY, US
Salvatore Vasapolli - Smithtown NY, US

Assignee:

Mechoshade Systems, Inc. - Long Island City NY

International Classification:

F16D 1/12

US Classification:

403102, 403 14, 403362, 4034091, 160324, 160325

Abstract:

A coupler system which changes the relationship of two or more rotating shade tubes is disclosed. The invention enables the installer to compensate for the height of the hembar by rotating the tube forward or backward any desired number of degrees. The coupler includes a cam which is adjusted by opposing set screws. The cam may be rotated by about 15 degrees in each direction. Adjusting the cam adjusts the second tube without adjusting the first tube (e. g. , the drive or motor end tube). The adjustment device is configured to rotate the cam which, in turn, rotates the second tube to align a second hem bar hanging from the second tube with a first hem bar hanging from the first tube. The adjustments may be accomplished with minimal or no removal or adjustment of the other shades, and with minimal friction on the aligned shade.

US Patent:

7919379, Apr 5, 2011

Filed:

Sep 10, 2007

Appl. No.:

11/852906

Inventors:

Eduard A. Cartier - New York NY, US
Rashmi Jha - Wappingers Falls NY, US
Sivananda Kanakasabapathy - Niskayuna NY, US
Xi Li - Somers NY, US
Renee T. Mo - Briarcliff Manor NY, US
Vijay Narayanan - New York NY, US
Vamsi Paruchuri - Albany NY, US
Mark T. Robson - Danbury CT, US
Kathryn T. Schonenberg - Wappingers Falls NY, US
Michelle L. Steen - Danbury CT, US
Richard Wise - Newburgh NY, US
Ying Zhang - Yorktown Heights NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 21/00
H01L 21/336

US Classification:

438302, 438304, 438305, 438306, 438592, 257316, 257320, 257387, 257E21202, 257E21205, 257E21444

Abstract:

The present invention relates to semiconductor devices, and more particularly to a process and structure for removing a dielectric spacer selective to a surface of a semiconductor substrate with substantially no removal of the semiconductor substrate. The method of the present invention can be integrated into a conventional CMOS processing scheme or into a conventional BiCMOS processing scheme. The method includes forming a field effect transistor on a semiconductor substrate, the FET comprising a dielectric spacer and the gate structure, the dielectric spacer located adjacent a sidewall of the gate structure and over a source/drain region in the semiconductor substrate; depositing a first nitride layer over the FET; and removing the nitride layer and the dielectric spacer selective to the semiconductor substrate with substantially no removal of the semiconductor substrate.

US Patent:

8016016, Sep 13, 2011

Filed:

Nov 7, 2008

Appl. No.:

12/266632

Inventors:

Joel Berman - Hewlett NY, US
Xi Ming Li - New York NY, US

Assignee:

Mechoshade Systems, Inc. - Long Island City NY

International Classification:

E06B 9/174

US Classification:

160242, 1603231, 160903

Abstract:

A trough shade system and method of use provide improved support for a roller tube and shade material. The roller tube and wound shade material are located within a support cradle to minimize unwanted deflection by the roller tube and associated wrinkling and deformation of the shade material. Various mechanisms allow the roller tube a limited range of movement within the support cradle. The system is suitable for shading larger areas than other shading systems which rely on roller tubes with fixed supports at the ends.

US Patent:

8276642, Oct 2, 2012

Filed:

Aug 9, 2011

Appl. No.:

13/205863

Inventors:

Joel Berman - Hewlett NY, US
Xi Ming Li - New York NY, US

Assignee:

MechoShade Systems, Inc. - Long Island City NY

International Classification:

E06B 9/174

US Classification:

160242, 1603231, 160900

Abstract:

A trough shade system and method of use provide improved support for a roller tube and shade material. The roller tube and wound shade material are located within a support cradle to minimize unwanted deflection by the roller tube and associated wrinkling and deformation of the shade material. Various mechanisms allow the roller tube a limited range of movement within the support cradle. The system is suitable for shading larger areas than other shading systems which rely on roller tubes with fixed supports at the ends.

US Patent:

20100294440, Nov 25, 2010

Filed:

May 22, 2009

Appl. No.:

12/471100

Inventors:

Xi Ming Li - Brooklyn NY, US
Eugene Miroshnichenko - Oceanside NY, US

Assignee:

MECHOSHADE SYSTEMS, INC. - Long Island City NY

International Classification:

E06B 9/68
E06B 9/56

US Classification:

160310, 1603231, 160309, 160405

Abstract:

An automated shade system that shades windows on different planes is disclosed. The automated shade system comprises a roller tube with shade material wound on the roller tube connected to a second roller tube with a second shade material wound on the second roller tube, wherein each roller tube is at an angle to the other. The roller tubes are connected by an off axis connector that transmits torque between the two roller tubes. The system has only one drive mechanism to operate the non coaxial roller tubes, whereas other shade systems would require separate drive mechanisms for each roller tube.

US Patent:

20130193563, Aug 1, 2013

Filed:

Mar 13, 2013

Appl. No.:

13/800488

Inventors:

International Business Machines Corporation - Armonk NY, US
Xi Li - Somers NY, US
Geng Wang - Stormville NY, US

Assignee:

International Business Machines Corporation - Armonk NY

International Classification:

H01L 29/06

US Classification:

257622

Abstract:

A trench capacitor and method of fabrication are disclosed. The SOI region is doped such that a selective isotropic etch used for trench widening does not cause appreciable pullback of the SOI region, and no spacers are needed in the upper portion of the trench.