Xiaoning Liang from Fremont, CA, age 37

Xiaoning Liang Phones & Addresses

High Temperature Operation Silicon Carbide Gate Driver
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US Patent:

20130063184, Mar 14, 2013
Filed:

Sep 9, 2010
Appl. No.:

12/878931
Inventors:

Xiaoning Liang - Santa Ana CA, US
Chunhu Tan - Irvine CA, US
Zhigang Lin - Irvine CA, US
Assignee:

AEGIS TECHNOLOGY, INC - Garden Grove CA
International Classification:

H03K 3/00
H01L 27/088
H01L 29/161
US Classification:

327108, 257 77, 257E29084
Abstract:

Versions of the present invention have many advantages, including operation under high temperatures, or high frequencies while providing the required current for switching a SiC VJFET, providing electrical isolation and minimizing dv/dt noise. One embodiment is a silicon carbide gate driver comprising a first group of silicon on insulator devices and passive components and a second group of silicon carbide devices. The first group may have equivalent temperatures of operation and equivalent frequencies of operation as the second group.