Wicresoft Redmond, WA Nov 2012 to Aug 2013 Vendor Program ManagerZTE USA Inc Bellevue, WA May 2012 to Nov 2012 Mobile Test EngineerBishop's University Sherbrooke, QC Sep 2009 to Jul 2011 Research AssistantBeijing University of Technology
Mar 2007 to May 2009 Research AssistantSiemens China
May 2007 to Jan 2008 Financial Data Analysis InternToshiba China R&D Center
2006 to 2006 Software Tester Intern
Education:
Bishop's University Sherbrooke, QC 2009 to 2011 M.Sc. in Computer ScienceBeijing University of Technology 2006 to 2009 M.Sc. in Applied MathematicsNorth China University of Technology 2002 to 2006 B.S. in Information and Computing Science
Skills:
SQL, Program Management, OEM Partner Engagement, Issue Management, Mobile Testing, Android, Windows Phone, Advanced Excel Skills, Visual Studio TFS, Microsoft Product Studio, VBA, Word, PowerPoint, Chinese
2014 to 2000CFD Modeling of Multiphase Reacting Flow
2014 to 2000US Steel
Aug 2013 to 2000Center for Innovation through Simulation and Visualization
Oct 2009 to 2000 Research AssistantClyde Bergemann Power Group Hanover, MD Jul 2014 to Aug 2014 CFD solverSummer Heat Transfer Conference Minneapolis, MN Jun 2013 to Aug 2013Tuyere Failure
May 2013 to Jul 2013Numerical Simulation of the Co
2013 to 2013Blast Furnace", AISTech Pittsburgh, PA 2013 to 2013Blast Furnace Hearth", Journal of Steel Research International Hammond, IN 2013 to 2013PCI System
May 2012 to Sep 2012Blast Furnace Hearth
Jun 2012 to Aug 2012Blast Furnace
Feb 2011 to May 2012 Pre-processorCFD Modeling of Skull Formation in A
2012 to 2012Parameters on Skull Formation in a Blast Furnace Hearth", AISTech Atlanta, GA 2012 to 2012model for blast furnace shaft process", AISTech Atlanta, GA 2012 to 2012Blast Furnace Hammond, IN Aug 2011 to Dec 2011Solidification
Jan 2011 to May 2011Mission Ocean
Sep 2010 to May 2011Zone in a Blast Furnace", AISTech Indianapolis, IN 2011 to 2011Paper Publications
Sep 2009 to May 2010Fluid & Heat Transfer Lab, Purdue University Calumet Hammond, IN Dec 2008 to Oct 2009 Lab Assistant
Education:
Center for Innovation May 2012 Master of Science in EngineeringPurdue University Calumet Hammond, IN May 2010 Bachelor of Science in Mechanical EngineeringPurdue University 2009Purdue University West Lafayette West Lafayette, IN Ph.D. in Mechanical Engineering
Chen & Fan Accountancy Corporation San Jose, CA Oct 2010 to Oct 2012 Staff AccountantDa Xing Inc Fremont, CA Mar 2010 to Oct 2010 Bookkeeper
Education:
American Institute of CPAs Nov 2011 AccountingUniversity of California Los Angeles, CA Sep 2007 to Jun 2009 B.A in EconomicsChabot Community College Aug 2007 Business Administration
Yan Chen - Santa Clara CA Claes Gustafsson - Belmont CA Anke Krebber - Mountain View CA Jeremy Minshull - Menlo Park CA Sun Ai Raillard - Mountain View CA
Assignee:
Pfizer, Inc. - New York NY
International Classification:
C12N 1574
US Classification:
435471, 43525235
Abstract:
The present invention relates to polynucleotide molecules comprising nucleotide sequences encoding an aveC gene product, which polynucleotide molecules can be used to alter the ratio or amount of class 2:1 avermectins produced in fermentation cultures of. The present invention further relates to vectors, host cells, and mutant strains of in which the aveC gene has been inactivated, or mutated so as to change the ratio or amount of class 2:1 avermectins produced.
Heterojunction Bipolar Transistor Having Wide Bandgap Material In Collector
Hin Fai Chau - Fremont CA Clarence John Dunnrowicz - Santa Cruz CA Yan Chen - Fremont CA Chien Ping Lee - Fremont CA
Assignee:
EIC Corporation - Fremont CA
International Classification:
H01L 29737
US Classification:
257198, 257197
Abstract:
The safe operating area (SOA) in a heterojunction bipolar transistor is improved by inserting a material between the collector and subcollector of the transistor with the insertion layer being a material having a wider energy bandgap than the material of the collector. The insertion layer increases the breakdown field at the collector-subcollector junction and thereby increases the Kirk effect induced breakdown voltage.
Heterojunction Bipolar Transistor Having Non-Uniformly Doped Collector For Improved Safe-Operating Area
Chien Ping Lee - Fremont CA, US Hin Fai Chau - Fremont CA, US Nanlei Larry Wang - Palo Alto CA, US Clarence John Dunnrowicz - Santa Cruz CA, US Yan Chen - Fremont CA, US Barry Jia-Fu Lin - Cupertino CA, US
Assignee:
WJ Communications, Inc. - San Jose CA
International Classification:
H01L 31/0336
US Classification:
257197, 257198
Abstract:
The safe-operating area (SOA) in a heterojunction bipolar transistor (HBT) is improved by providing a collector region in the transistor having a graded (uniformly or stepped) doping between the base region and the underlying subcollector region with the collector doping being lower near the base and higher near the subcollector and with the collector doping being less than the doping of the subcollector. The non-uniformly doped collector reduces Kirk effect induced breakdown when collector current increases.
Mathai Mammen - Redwood Shores CA, US Sarah Dunham - South Yarra, AU Adam Hughes - Belmont CA, US Tae Weon Lee - Palo Alto CA, US Craig Husfeld - Redwood City CA, US Eric Stangeland - Pacifica CA, US Yan Chen - Burlingame CA, US
Assignee:
Theravance, Inc. - South San Francisco CA
International Classification:
C07D 211/56 C07D 211/72 A61K 31/47 A61K 31/445
US Classification:
546224, 546304, 514312, 514317
Abstract:
This invention provides biphenyl derivatives of formula I:.
Diphenylmethyl Compounds Useful As Muscarinic Receptor Antagonists
This invention provides compounds of formula I:wherein a, b, c, e, m, n, Ar, R, R, R, R, R, Rand Rare as defined in the specification. The compounds of formula I are muscarinic receptor antagonists. The invention also provides pharmaceutical compositions containing such compounds, processes and intermediates for preparing such compounds and methods of using such compounds to treat pulmonary disorders.
Measuring A Process Parameter Of A Semiconductor Fabrication Process Using Optical Metrology
To measure a process parameter of a semiconductor fabrication process, the fabrication process is performed on a first area using a first value of the process parameter. The fabrication process is performed on a second area using a second value of the process parameter. A first measurement of the first area is obtained using an optical metrology tool. A second measurement of the second area is obtained using the optical metrology tool. One or more optical properties of the first area are determined based on the first measurement. One or more optical properties of the second area are determined based on the second measurement. The fabrication process is performed on a third area. A third measurement of the third area is obtained using the optical metrology tool. A third value of the process parameter is determined based on the third measurement and a relationship between the determined optical properties of the first and second areas.
Meyer London Public School 2 New York NY 1997-1998, Corlears Junior High School 56 New York NY 1998-2000, Squalicum High School Bellingham WA 2000-2001, Environmental High School New York NY 2001-2005
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27 Jan, 2010
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Jason Chen & Janice Yan - Hate That I Love Yo...
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09 Mar, 2011
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4m 21s
rainie yang - ai mei [pinyin and english lyri...
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Stauffer: Raise Your Books
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05 Apr, 2011
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WSOP 2010: Event #14 Winner Yan Chen
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Googleplus
Yan Chen
Work:
Air France - Outlet juicy couture
Education:
Harvard University
Yan Chen
Education:
Corvinus University of Budapest - Business and Management
Yan Chen
Education:
University of North Carolina at Chapel Hill
Yan Chen
Education:
RIT
Yan Chen
Education:
Suny College At New Paltz - Graphics Design
Relationship:
Single
Yan Chen
Work:
DG RLU PRINT & PACK CO.LTD - SALES MANAGER (2005)
Yan Chen
Education:
ZheJiang University
Yan Chen
Work:
Huawei Company - Research Engineer
About:
Ph.D, graduated from Xiamen University of China. He was a visiting scholar at University of Texas at Dallas and Arizona State University from 2007 to 2008 and 2010. He is now a research engineer of Hu...