Yan Chen

US Patent:

6632673, Oct 14, 2003

Filed:

Aug 10, 2000

Appl. No.:

09/637040

Inventors:

Yan Chen - Santa Clara CA
Claes Gustafsson - Belmont CA
Anke Krebber - Mountain View CA
Jeremy Minshull - Menlo Park CA
Sun Ai Raillard - Mountain View CA

Assignee:

Pfizer, Inc. - New York NY

International Classification:

C12N 1574

US Classification:

435471, 43525235

Abstract:

The present invention relates to polynucleotide molecules comprising nucleotide sequences encoding an aveC gene product, which polynucleotide molecules can be used to alter the ratio or amount of class 2:1 avermectins produced in fermentation cultures of. The present invention further relates to vectors, host cells, and mutant strains of in which the aveC gene has been inactivated, or mutated so as to change the ratio or amount of class 2:1 avermectins produced.

US Patent:

6806513, Oct 19, 2004

Filed:

Oct 8, 2002

Appl. No.:

10/267342

Inventors:

Hin Fai Chau - Fremont CA
Clarence John Dunnrowicz - Santa Cruz CA
Yan Chen - Fremont CA
Chien Ping Lee - Fremont CA

Assignee:

EIC Corporation - Fremont CA

International Classification:

H01L 29737

US Classification:

257198, 257197

Abstract:

The safe operating area (SOA) in a heterojunction bipolar transistor is improved by inserting a material between the collector and subcollector of the transistor with the insertion layer being a material having a wider energy bandgap than the material of the collector. The insertion layer increases the breakdown field at the collector-subcollector junction and thereby increases the Kirk effect induced breakdown voltage.

US Patent:

7012288, Mar 14, 2006

Filed:

Oct 8, 2002

Appl. No.:

10/267215

Inventors:

Chien Ping Lee - Fremont CA, US
Hin Fai Chau - Fremont CA, US
Nanlei Larry Wang - Palo Alto CA, US
Clarence John Dunnrowicz - Santa Cruz CA, US
Yan Chen - Fremont CA, US
Barry Jia-Fu Lin - Cupertino CA, US

Assignee:

WJ Communications, Inc. - San Jose CA

International Classification:

H01L 31/0336

US Classification:

257197, 257198

Abstract:

The safe-operating area (SOA) in a heterojunction bipolar transistor (HBT) is improved by providing a collector region in the transistor having a graded (uniformly or stepped) doping between the base region and the underlying subcollector region with the collector doping being lower near the base and higher near the subcollector and with the collector doping being less than the doping of the subcollector. The non-uniformly doped collector reduces Kirk effect induced breakdown when collector current increases.

US Patent:

7141671, Nov 28, 2006

Filed:

Feb 13, 2004

Appl. No.:

10/779157

Inventors:

Mathai Mammen - Redwood Shores CA, US
Sarah Dunham - South Yarra, AU
Adam Hughes - Belmont CA, US
Tae Weon Lee - Palo Alto CA, US
Craig Husfeld - Redwood City CA, US
Eric Stangeland - Pacifica CA, US
Yan Chen - Burlingame CA, US

Assignee:

Theravance, Inc. - South San Francisco CA

International Classification:

C07D 211/56
C07D 211/72
A61K 31/47
A61K 31/445

US Classification:

546224, 546304, 514312, 514317

Abstract:

This invention provides biphenyl derivatives of formula I:.

US Patent:

7250414, Jul 31, 2007

Filed:

Mar 10, 2005

Appl. No.:

11/077391

Inventors:

Mathai Mammen - Redwood Shores CA, US
Yu-Hua Ji - Redwood City CA, US
Yan Chen - Burlingame CA, US
Craig Husfeld - Redwood City CA, US

Assignee:

Theravance, Inc. - South San Francisco CA

International Classification:

C07D 207/08
C07D 413/14
C07D 403/14
A61K 31/4025
A61K 31/5377

US Classification:

5142355, 51425401, 51425505, 514422, 544141, 544336, 544372, 548517, 548527, 548568

Abstract:

This invention provides compounds of formula I:wherein a, b, c, e, m, n, Ar, R, R, R, R, R, Rand Rare as defined in the specification. The compounds of formula I are muscarinic receptor antagonists. The invention also provides pharmaceutical compositions containing such compounds, processes and intermediates for preparing such compounds and methods of using such compounds to treat pulmonary disorders.

US Patent:

7327475, Feb 5, 2008

Filed:

Dec 15, 2006

Appl. No.:

11/639515

Inventors:

Hanyou Chu - Palo Alto CA, US
Vi Vuong - Fremont CA, US
Yan Chen - Santa Clara CA, US

Assignee:

Tokyo Electron Limited - Tokyo

International Classification:

G06F 19/00
H01L 21/66

US Classification:

356625, 356446, 356601, 702 57, 702189, 700121, 438 14

Abstract:

To measure a process parameter of a semiconductor fabrication process, the fabrication process is performed on a first area using a first value of the process parameter. The fabrication process is performed on a second area using a second value of the process parameter. A first measurement of the first area is obtained using an optical metrology tool. A second measurement of the second area is obtained using the optical metrology tool. One or more optical properties of the first area are determined based on the first measurement. One or more optical properties of the second area are determined based on the second measurement. The fabrication process is performed on a third area. A third measurement of the third area is obtained using the optical metrology tool. A third value of the process parameter is determined based on the third measurement and a relationship between the determined optical properties of the first and second areas.

US Patent:

7345175, Mar 18, 2008

Filed:

Jun 7, 2006

Appl. No.:

11/448293

Inventors:

Mathai Mammen - Redwood Shores CA, US
Adam Hughes - Belmont CA, US
Yan Chen - Burlingame CA, US

Assignee:

Theravance, Inc. - South San Francisco CA

International Classification:

C07D 211/00

US Classification:

546242

Abstract:

This invention provides biphenyl derivatives of formula I:.

US Patent:

7355046, Apr 8, 2008

Filed:

Jun 7, 2006

Appl. No.:

11/448294

Inventors:

Mathai Mammen - Redwood Shores CA, US
Adam Hughes - Belmont CA, US
Yan Chen - Burlingame CA, US

Assignee:

Theravance, Inc. - South San Francisco CA

International Classification:

C07D 221/02

US Classification:

546135

Abstract:

This invention provides biphenyl derivatives of formula I:.