Yang Mackenzie Chen

US Patent:

20140020746, Jan 23, 2014

Filed:

May 17, 2011

Appl. No.:

13/805403

Inventors:

Alison Joan Lennon - Rozelle, AU
Pei Hsuan Lu - Rockdale, AU
Yang Chen - Rochester NY, US

Assignee:

NewSouth Innovations Pty Limited - UNSW, Sydney

International Classification:

H01L 31/02

US Classification:

136256, 438 83

Abstract:

A method of forming point metal electrical contacts to a semiconductor surface of a semiconductor device is provided. In a first step a first metal layer is formed over the semiconductor surface. The first metal layer is then anodised to create a porous metal-oxide layer formed over the semiconductor surface. The pores in the porous metal-oxide layer will thus form an array of openings in the porous metal-oxide layer. A contact metal layer is then formed over the porous metal-oxide layer such that parts of the contact metal layer extend into openings of the array of openings. The contact metal layer electrically contacts the semiconductor surface through the array of openings in the porous metal-oxide layer. A dielectric layer may optionally be formed over the semiconductor surface and the porous metal-oxide layer the formed over the dielectric layer and the contact metal then contacts the semiconductor surface through the dielectric layer.