Ying Yu Yu

US Patent:

6436192, Aug 20, 2002

Filed:

Jan 11, 2000

Appl. No.:

09/481055

Inventors:

Ling Chen - Sunnyvale CA
Joseph Yudovsky - Palo Alto CA
Ying Yu - Cupertino CA
Lawrence C. Lei - Milpitas CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

C23C 1600

US Classification:

118696, 118728, 118500

Abstract:

A method for aligning a wafer on a support member within a vacuum chamber includes increasing the pressure within the vacuum chamber to at least about 1 Torr before aligning the wafer. The wafer is introduced into the vacuum chamber on the support member, the pressure is increased to at least about one Torr, and the support member is lifted into a shadow ring that has a frustoconical inner cavity constructed to funnel the wafer to a centered, aligned position.

US Patent:

6586343, Jul 1, 2003

Filed:

Jul 9, 1999

Appl. No.:

09/350817

Inventors:

Henry Ho - San Jose CA
Ying Yu - Cupertino CA
Steven A. Chen - Fremont CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2131

US Classification:

438758, 438778, 438786, 438787, 438791, 118719, 118900

Abstract:

A method and apparatus for directing a process gas through a processing apparatus, such as a vapor deposition chamber. The apparatus comprises a pumping plate for a processing chamber having an annular body member wherein said body member has a first portion and a second defining a circumferential edge and a central opening. The first portion comprises a sidewall of the circumferential edge having a plurality of circumferentially spaced through holes and the second portion has comprises a lateral portion that protrudes from the circumferential edge, such that, in a processing chamber, the first portion defines a first gas flow region comprising the central opening and a second gas flow region comprising the lateral portion of the second portion.

US Patent:

6645884, Nov 11, 2003

Filed:

Jul 9, 1999

Appl. No.:

09/350810

Inventors:

Michael X. Yang - Fremont CA
Karl Littau - Palo Alto CA
Steven A. Chen - Fremont CA
Henry Ho - San Jose CA
Ying Yu - Cupertino CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

H01L 2102

US Classification:

438791, 438584, 438680, 438758, 438774, 438775

Abstract:

The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.

US Patent:

6797643, Sep 28, 2004

Filed:

Oct 23, 2002

Appl. No.:

10/279367

Inventors:

Juan Carlos Rocha-Alvarez - Sunnyvale CA
Maosheng Zhao - Santa Clara CA
Ying Yu - Cupertino CA
Shankar Venkataraman - Santa Clara CA
Srinivas D. Nemani - Sunnyvale CA
Li-Qun Xia - Santa Clara CA

Assignee:

Applied Materials Inc. - Santa Clara CA

International Classification:

H01L 2131

US Classification:

438758, 438622, 438623, 438767, 438790, 438633

Abstract:

A method of depositing a low dielectric constant film on a substrate. In one embodiment, the method includes the steps of positioning the substrate in a deposition chamber, providing a gas mixture to the deposition chamber, in which the gas mixture is comprised of one or more cyclic organosilicon compounds, one or more aliphatic compounds and one or more oxidizing gases. The method further includes reacting the gas mixture in the presence of an electric field to form the low dielectric constant film on the semiconductor substrate. The electric field is generated using a very high frequency power having a frequency in a range of about 20 MHz to about 100 MHz.

US Patent:

6820298, Nov 23, 2004

Filed:

Apr 19, 2001

Appl. No.:

09/838959

Inventors:

John M White - Hayward CA
Ying Yu - Cupertino CA
Michael Sugarman - San Francisco CA

Assignee:

Applied Materials, Inc. - Santa Clara CA

International Classification:

B08B 104

US Classification:

15 77, 15 883, 15 211, 15179, 4033221, 403325

Abstract:

A brush mounting system for a wafer scrubbing device includes a brush mandrel and a mounting assembly on which the brush mandrel is mounted. The mounting assembly includes a mounting member adapted to be mounted to a wall of the wafer scrubbing device, and a bearing secured to the mounting member. A brush support is rotatably mounted on the bearing and has an outer end that includes a contact surface adapted to contact the brush mandrel. The contact surface has a spherical profile. The brush mandrel includes a corresponding contact surface having a spherical profile, so that the brush mandrel and the mounting assembly form a spherical joint at the point of contact.

US Patent:

8492399, Jul 23, 2013

Filed:

Oct 16, 2012

Appl. No.:

13/652808

Inventors:

Michael R. Leadbetter - San Leandro CA, US
Pierre-Jean Colson - San Francisco CA, US
Miroslav Rapta - San Carlos CA, US
Ying Yu - Sunnyvale CA, US

Assignee:

Theravance, Inc. - South San Francisco CA

International Classification:

A01N 43/42

US Classification:

514282

Abstract:

The invention provides 3-carboxypropyl-aminotetralin compounds of formula (I):.

US Patent:

20020045362, Apr 18, 2002

Filed:

Oct 8, 2001

Appl. No.:

09/973403

Inventors:

Michael Yang - Fremont CA, US
Karl Littau - Palo Alto CA, US
Steven Chen - Fremont CA, US
Henry Ho - San Jose CA, US
Ying Yu - Cupertino CA, US

International Classification:

H01L021/469

US Classification:

438/791000

Abstract:

The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 on to 500 Torr.

US Patent:

20080175993, Jul 24, 2008

Filed:

Feb 6, 2008

Appl. No.:

12/027169

Inventors:

Jalal Ashjaee - Cupertino CA, US
Ying Yu - Cupertino CA, US
Bulent M. Basol - Manhattan Beach CA, US

International Classification:

C23C 16/00

US Classification:

42725526, 118718

Abstract:

A roll to roll rapid thermal processing tool which is used to react a precursor material disposed over a flexible foil substrate to form a solar cell absorber. The RTP tool includes a significantly low aspect ratio process gap through which a flexible foil substrate is moved. A low temperature zone of the RTP tool forms a first portion of the process gap, a high temperature zone of the RTP tool forms a second portion of the process gap, and a buffer zone forms a third portion of the process gap that connects the first portion to the second portion of the gap. The temperature of a section of the flexible foil substrate is increased from the temperature of the low temperature zone to the temperature of the high temperature zone as the section of the continuous workpiece travels through the buffer zone. The buffer zone includes at least one low thermal conductivity section having cavities.